Inventor · disambiguated record
Teruo Shibano
Also filed as: SHIBANO TERUO
13 granted patents·332 citations·filing 1988–2003
93Inventor score
Files withMITSUBISHI ELECTRIC CORP13
Top patents by PatentIndex Score
13 records- 0188US4877509ASemiconductor wafer treating apparatus utilizing a plasmaMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Oct 31, 1989·43 cites·8 claims
- 0286US5834060AHigh dielectric constant thin film structure method for forming high dielectric constant thin film and apparatus for forming high dielectric contact thin filmMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Nov 10, 1998·62 cites·3 claims
- 0380US6015989ASemiconductor device having a capacitor electrode formed of iridum or ruthenium and a quantity of oxygenMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Jan 18, 2000·53 cites·6 claims
- 0479US4915979ASemiconductor wafer treating device utilizing ECR plasmaMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Apr 10, 1990·24 cites·6 claims
- 0578US6101085AHigh dielectric constant thin film structure, method for forming high dielectric constant thin film, and apparatus for forming high dielectric constant thin filmMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Aug 8, 2000·40 cites·4 claims
- 0676US6239460B1Semiconductor device which includes a capacitor having a lower electrode formed of iridium or rutheniumMITSUBISHI ELECTRIC CORP·Filed 1996·Granted May 29, 2001·36 cites·7 claims
- 0775US6885726B2Fluorescent X-ray analysis apparatusMITSUBISHI ELECTRIC CORP·Filed 2003·Granted Apr 26, 2005·18 cites·8 claims
- 0874US4982138ASemiconductor wafer treating device utilizing a plasmaMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Jan 1, 1991·19 cites·5 claims
- 0956US5989635AHigh dielectric constant thin film structure, method for forming high dielectric constant thin film and apparatus for forming high dielectric constant thin filmMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Nov 23, 1999·14 cites·1 claims
- 1045US6420191B2Method of manufacturing semiconductor device which includes a capacitor having a lower electrode formed of iridium or rutheniumMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Jul 16, 2002·2 cites·10 claims
- 1145US5882410AHigh dielectric constant thin film structure, method for forming high dielectric constant thin film, and apparatus for forming high dielectric constant thin filmMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Mar 16, 1999·11 cites·1 claims
- 1237US5304775AMethod of etching a wafer having high anisotropy with a plasma gas containing halogens and in inert elementMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Apr 19, 1994·9 cites·25 claims
- 1332US6165556AHigh dielectric constant thin film structure, method for forming high dielectric constant thin film, and apparatus for forming high dielectric constant thin filmMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Dec 26, 2000·1 cites·4 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →