Inventor · disambiguated record
Tetsuya Taguwa
Also filed as: TAGUWA TETSUYA
20 granted patents·5 pending applications·313 citations·filing 1996–2009
95Inventor score
Top patents by PatentIndex Score
25 records- 0192US7675119B2Semiconductor device and manufacturing method thereofELPIDA MEMORY INC·Filed 2007·Granted Mar 9, 2010·26 cites·17 claims
- 0281US6404058B1Semiconductor device having interconnection implemented by refractory metal nitride layer and refractory metal silicide layer and process of fabrication thereofNEC CORP·Filed 2000·Granted Jun 11, 2002·29 cites·12 claims
- 0379US6800543B2Semiconductor device having a low-resistance gate electrodeELPIDA MEMORY INC·Filed 2002·Granted Oct 5, 2004·22 cites·13 claims
- 0478US6475907B1Semiconductor device having a barrier metal layer and method for manufacturing the sameNEC CORP·Filed 2000·Granted Nov 5, 2002·27 cites·4 claims
- 0578US6020254AMethod of fabricating semiconductor devices with contact holesNEC CORP·Filed 1996·Granted Feb 1, 2000·53 cites·13 claims
- 0673US6440828B1Process of fabricating semiconductor device having low-resistive contact without high temperature heat treatmentNEC CORP·Filed 1997·Granted Aug 27, 2002·37 cites·8 claims
- 0772US6613669B2Semiconductor device and method for manufacturing the sameNEC ELECTRONICS CORP·Filed 2001·Granted Sep 2, 2003·16 cites·4 claims
- 0872US6204170B1Method for manufacturing semiconductor device having metal silicide film and metal film in which metal film can be selectively removedNEC CORP·Filed 1998·Granted Mar 20, 2001·40 cites·4 claims
- 0963US6432493B1Method of carrying out plasma-enhanced chemical vapor depositionNEC CORP·Filed 2000·Granted Aug 13, 2002·4 cites·9 claims
- 1062US6569759B2Semiconductor device having interconnection implemented by refractory metal nitride layer and refractory metal silicide layer and process of fabrication thereofNEC ELECTRONICS CORP·Filed 2002·Granted May 27, 2003·9 cites·11 claims
- 1160US6589873B2Process for manufacturing a semiconductor deviceNEC ELECTRONICS CORP·Filed 2000·Granted Jul 8, 2003·6 cites·8 claims
- 1255US6176936B1In-situ chamber cleaning method of CVD apparatusNEC CORP·Filed 1998·Granted Jan 23, 2001·18 cites·9 claims
- 1351US6107190AMethod of fabricating semiconductor deviceNEC CORP·Filed 1997·Granted Aug 22, 2000·16 cites·21 claims
- 1450US7919405B2Semiconductor device and manufacturing method thereofELPIDA MEMORY INC·Filed 2009·Granted Apr 5, 2011·0 cites·10 claims
- 1550US7078747B2Semiconductor device having a HMP metal gateELPIDA MEMORY INC·Filed 2004·Granted Jul 18, 2006·4 cites·15 claims
- 1647US6167836B1Plasma-enhanced chemical vapor deposition apparatusNEC CORP·Filed 1998·Granted Jan 2, 2001·6 cites·2 claims
- 1746US7504698B2Semiconductor device and manufacturing method thereofELPIDA MEMORY INC·Filed 2006·Granted Mar 17, 2009·0 cites·12 claims
- 1844US7563698B2Method for manufacturing semiconductor deviceELPIDA MEMORY INC·Filed 2008·Granted Jul 21, 2009·0 cites·11 claims
- 1942US2008061386A1Semiconductor device including a gate electrode having a polymetal structureELPIDA MEMORY INC·Filed 2007·Application pending·0 cites
- 2041US2003205194A1Process for manufacturing a semiconductor deviceFiled 2003·Application pending·0 cites
- 2141US2004017157A1Method of and apparatus for performing circuit-processing, method of and apparatus for controlling the motion of the circuit-processing performing apparatus, and information storage mediumFiled 2003·Application pending·0 cites
- 2240US7078777B2Semiconductor device having a low-resistance gate electrodeELPIDA MEMORY INC·Filed 2004·Granted Jul 18, 2006·0 cites·9 claims
- 2340US6624582B2Method of an apparatus for performing circuit-processing, method of and apparatus for controlling the motion of the circuit-processing performance apparatus, and information storage mediumNEC ELECTRONICS CORP·Filed 2001·Granted Sep 23, 2003·0 cites·11 claims
- 2439US2003205818A1Semiconductor device and method for manufacturing the sameFiled 2003·Application pending·0 cites
- 2529US2002043722A1Semiconductor device and method of manufacturing the sameFiled 1998·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →