Inventor · disambiguated record
Tetsujiro Tsunoda
Also filed as: TSUNODA TETSUJIRO
36 granted patents·1 pending application·931 citations·filing 1989–2019
98Inventor score
Top patents by PatentIndex Score
37 records- 0197US6346464B1Manufacturing method of semiconductor deviceTOSHIBA KK·Filed 2000·Granted Feb 12, 2002·146 cites·18 claims
- 0290US5488256ASemiconductor device with interconnect substratesTOSHIBA KK·Filed 1994·Granted Jan 30, 1996·78 cites·5 claims
- 0388US7675113B2Insulated gate transistorMITSUBISHI ELECTRIC CORP·Filed 2007·Granted Mar 9, 2010·21 cites·5 claims
- 0486US6060772APower semiconductor module with a plurality of semiconductor chipsTOSHIBA KK·Filed 1998·Granted May 9, 2000·121 cites·21 claims
- 0583USD466076SPower converterTOSHIBA KK·Filed 2001·Granted Nov 26, 2002·35 cites·1 claims
- 0678US5347158ASemiconductor device having a particular terminal arrangementTOSHIBA KK·Filed 1993·Granted Sep 13, 1994·50 cites·15 claims
- 0777US5466969AIntelligent power device moduleTOSHIBA KK·Filed 1994·Granted Nov 14, 1995·48 cites·20 claims
- 0877US5143865AMetal bump type semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 1991·Granted Sep 1, 1992·61 cites·9 claims
- 0973US5023684AComposite semiconductor device having function for overcurrent detectionTOSHIBA KK·Filed 1990·Granted Jun 11, 1991·33 cites·16 claims
- 1072US5250446AMethod of manufacturing a semiconductor device by forming at least three regions of different lifetimes of carriers at different depthsTOSHIBA KK·Filed 1992·Granted Oct 5, 1993·48 cites·4 claims
- 1171US7777249B2Semiconductor device with enhanced switching speed and method for manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2007·Granted Aug 17, 2010·4 cites·3 claims
- 1271USD464618SPower converterTOSHIBA KK·Filed 2001·Granted Oct 22, 2002·18 cites·1 claims
- 1371US5124772AInsulated gate bipolar transistor with a shortened carrier lifetime regionTOSHIBA KK·Filed 1990·Granted Jun 23, 1992·34 cites·8 claims
- 1470US6417532B2Power semiconductor module for use in power conversion units with downsizing requirementsTOSHIBA KK·Filed 2001·Granted Jul 9, 2002·26 cites·38 claims
- 1569US5384683AIntelligent power device moduleTOSHIBA KK·Filed 1992·Granted Jan 24, 1995·35 cites·19 claims
- 1666US6002153AMOS type semiconductor device with a current detecting functionTOSHIBA KK·Filed 1996·Granted Dec 14, 1999·26 cites·13 claims
- 1766US5286655AMethod of manufacturing a semiconductor device of an anode short circuit structureTOSHIBA KK·Filed 1993·Granted Feb 15, 1994·39 cites·7 claims
- 1865US7872337B2Semiconductor device having a flexible board for connection to a semiconductor chip mounted on an insulating substrateMITSUBISHI ELECTRIC CORP·Filed 2006·Granted Jan 18, 2011·3 cites·13 claims
- 1963US8129818B2Power deviceTOOI SHIGEO·Filed 2008·Granted Mar 6, 2012·4 cites·3 claims
- 2063US5243205ASemiconductor device with overvoltage protective functionTOSHIBA KK·Filed 1992·Granted Sep 7, 1993·35 cites·26 claims
- 2159US7772669B2Semiconductor device having an improved structure for high withstand voltageMITSUBISHI ELECTRIC CORP·Filed 2006·Granted Aug 10, 2010·2 cites·11 claims
- 2256US4920062AManufacturing method for vertically conductive semiconductor devicesTOSHIBA KK·Filed 1989·Granted Apr 24, 1990·16 cites·9 claims
- 2355US8390097B2Insulated gate bipolar transistor having contact region with variable widthHAMAGUCHI TAKUYA·Filed 2007·Granted Mar 5, 2013·2 cites·18 claims
- 2454USRE41181EManufacturing method of semiconductor deviceTOSHIBA KK·Filed 2004·Granted Mar 30, 2010·3 cites·21 claims
- 2552US9153502B2Semiconductor chip testing method and semiconductor chip testing deviceHAMAGUCHI TAKUYA·Filed 2012·Granted Oct 6, 2015·1 cites·20 claims
- 2652US5032880ASemiconductor device having an interposing layer between an electrode and a connection electrodeTOSHIBA KK·Filed 1990·Granted Jul 16, 1991·15 cites·15 claims
- 2751USD476622SPortion of a power converterTOSHIBA KK·Filed 2001·Granted Jul 1, 2003·8 cites·1 claims
- 2850US11901416B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2019·Granted Feb 13, 2024·0 cites·5 claims
- 2950US10354940B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2018·Granted Jul 16, 2019·0 cites·16 claims
- 3046USD467869SPortion of power converterTOSHIBA KK·Filed 2001·Granted Dec 31, 2002·6 cites·1 claims
- 3145US2011024896A1Power semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2008·Application pending·0 cites
- 3243USD475012SPortion of a power converterTOSHIBA KK·Filed 2001·Granted May 27, 2003·5 cites·1 claims
- 3340US10389229B2Power moduleMITSUBISHI ELECTRIC CORP·Filed 2016·Granted Aug 20, 2019·0 cites·11 claims
- 3440US7091554B2Semiconductor deviceTOSHIBA KK·Filed 2003·Granted Aug 15, 2006·1 cites·11 claims
- 3537US9735226B1Power moduleMITSUBISHI ELECTRIC CORP·Filed 2016·Granted Aug 15, 2017·0 cites·7 claims
- 3635US8803278B2Semiconductor deviceATA YASUO·Filed 2011·Granted Aug 12, 2014·0 cites·7 claims
- 3732US5115300AHigh-power semiconductor deviceTOSHIBA KK·Filed 1990·Granted May 19, 1992·7 cites·12 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →