Inventor · disambiguated record
Tetsuji Ueno
Also filed as: UENO TETSUJI
31 granted patents·12 pending applications·291 citations·filing 2002–2025
96Inventor score
Files withSAMSUNG ELECTRONICS CO LTD19TAIWAN SEMICONDUCTOR MFG CO LTD16UENO TETSUJI4DONG-SUK SHIN1FUJITSU LTD1
Top patents by PatentIndex Score
43 records- 0197US7952147B2Semiconductor device having analog transistor with improved operating and flicker noise characteristics and method of making sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 31, 2011·122 cites·12 claims
- 0297US7361563B2Methods of fabricating a semiconductor device using a selective epitaxial growth techniqueSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 22, 2008·94 cites·26 claims
- 0395US11296187B2Seal material for air gaps in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 5, 2022·3 cites·20 claims
- 0491US11688766B2Seal material for air gaps in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 27, 2023·1 cites·20 claims
- 0590US10658468B2Epitaxial growth methods and structures thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 19, 2020·1 cites·20 claims
- 0685US7601983B2Transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 13, 2009·13 cites·19 claims
- 0784US7611951B2Method of fabricating MOS transistor having epitaxial regionSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 3, 2009·9 cites·23 claims
- 0883US2025324732A1Methods for manufacturing semiconductor devices with tunable low-k inner air spacersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0981US12369374B2Epitaxial growth methods and structures thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 22, 2025·0 cites·20 claims
- 1081US12324200B2Seal material for air gaps in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 3, 2025·0 cites·20 claims
- 1180US7611973B2Methods of selectively forming epitaxial semiconductor layer on single crystalline semiconductor and semiconductor devices fabricated using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Nov 3, 2009·7 cites·43 claims
- 1278US7714394B2CMOS semiconductor devices having elevated source and drain regions and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 11, 2010·6 cites·23 claims
- 1377US2024363722A1Air spacer formation with a spin-on dielectric materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1476US12094952B2Air spacer formation with a spin-on dielectric materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 17, 2024·0 cites·20 claims
- 1575US12369388B2Semiconductor devices with tunable low-K inner air spacersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 22, 2025·0 cites·20 claims
- 1672US11456360B2Epitaxial growth methods and structures thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 27, 2022·0 cites·20 claims
- 1772US7619285B2Method of fabricating CMOS transistor and CMOS transistor fabricated therebySAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Nov 17, 2009·4 cites·7 claims
- 1872US7439596B2Transistors for semiconductor device and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 21, 2008·5 cites·9 claims
- 1972US7365010B2Semiconductor device having carbon-containing metal silicide layer and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 29, 2008·5 cites·28 claims
- 2068US12412779B2Bilayer seal material for air gaps in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 9, 2025·0 cites·20 claims
- 2168US11626482B2Air spacer formation with a spin-on dielectric materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 11, 2023·0 cites·20 claims
- 2267US11848238B2Methods for manufacturing semiconductor devices with tunable low-k inner air spacersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 19, 2023·0 cites·20 claims
- 2366US7776723B2Method of manufacturing an epitaxial semiconductor substrate and method of manufacturing a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Aug 17, 2010·2 cites·29 claims
- 2466US7582535B2Method of forming MOS transistor having fully silicided metal gate electrodeSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 1, 2009·3 cites·15 claims
- 2565US7728393B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 1, 2010·2 cites·16 claims
- 2664US7791146B2Semiconductor device including field effect transistor and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 7, 2010·2 cites·9 claims
- 2762US6777728B2Semiconductor device and complementary semiconductor deviceFUJITSU LTD·Filed 2002·Granted Aug 17, 2004·10 cites·14 claims
- 2861US7682888B2Methods of forming NMOS/PMOS transistors with source/drains including strained materialsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 23, 2010·2 cites·26 claims
- 2958US10453925B2Epitaxial growth methods and structures thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 22, 2019·0 cites·20 claims
- 3057US11502166B2Seal material for air gaps in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 15, 2022·0 cites·20 claims
- 3153US11901220B2Bilayer seal material for air gaps in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 13, 2024·0 cites·20 claims
- 3251US2025293024A1Substrate processing method and substrate processing apparatusTOKYO ELECTRON LTD·Filed 2025·Application pending·0 cites
- 3347US2013249016A1Semiconductor device having analog transistor with improved operating and flicker noise characteristics and method of making sameUENO TETSUJI·Filed 2013·Application pending·0 cites
- 3446US8445968B2Semiconductor device having analog transistor with improved operating and flicker noise characteristics and method of making sameUENO TETSUJI·Filed 2011·Granted May 21, 2013·0 cites·4 claims
- 3546US8338261B2Semiconductor device including field effect transistor and method of forming the sameKIM MYUNG-SUN·Filed 2010·Granted Dec 25, 2012·0 cites·11 claims
- 3646US2008067545A1Semiconductor device including field effect transistor and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 3743US2007020893A1Low defect epitaxial semiconductor substrate having gettering function, image sensor using the same, and fabrication method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 3842US2006172501A1Method of manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 3942US2008121992A1Semiconductor device including diffusion barrier region and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 4041US2006038243A1Transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 4140US2006156970A1Methods for in-situ cleaning of semiconductor substrates and methods of semiconductor device fabrication employing the sameDONG-SUK SHIN·Filed 2005·Application pending·0 cites
- 4238US2008006887A1Semiconductor Devices Including Impurity Doped Region and Methods of Forming the SameUENO TETSUJI·Filed 2007·Application pending·0 cites
- 4333US2007057320A1Semiconductor Devices with Stressed Channel Regions and methods Forming the SameUENO TETSUJI·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →