Inventor · disambiguated record
Thomas Aichinger
Also filed as: AICHINGER THOMAS
31 granted patents·19 pending applications·90 citations·filing 2014–2025
95Inventor score
Files withINFINEON TECHNOLOGIES AG50
Top patents by PatentIndex Score
50 records- 0196US10304953B2Semiconductor device with stripe-shaped trench gate structures, transistor mesas and diode mesasINFINEON TECHNOLOGIES AG·Filed 2015·Granted May 28, 2019·15 cites·19 claims
- 0296US9577073B2Method of forming a silicon-carbide device with a shielded gateINFINEON TECHNOLOGIES AG·Filed 2014·Granted Feb 21, 2017·19 cites·18 claims
- 0394US10211306B2Semiconductor device with diode region and trench gate structureINFINEON TECHNOLOGIES AG·Filed 2018·Granted Feb 19, 2019·15 cites·21 claims
- 0494US10074741B2Semiconductor device with trench gate structure including a gate electrode and a contact structure for a diode regionINFINEON TECHNOLOGIES AG·Filed 2016·Granted Sep 11, 2018·10 cites·23 claims
- 0593US10714609B2Semiconductor device with stripe-shaped trench gate structures, transistor mesas and diode mesasINFINEON TECHNOLOGIES AG·Filed 2019·Granted Jul 14, 2020·7 cites·8 claims
- 0693US10586845B1SiC trench transistor device and methods of manufacturing thereofINFINEON TECHNOLOGIES AG·Filed 2018·Granted Mar 10, 2020·9 cites·25 claims
- 0785US9960243B2Semiconductor device with stripe-shaped trench gate structures and gate connector structureINFINEON TECHNOLOGIES AG·Filed 2016·Granted May 1, 2018·3 cites·19 claims
- 0883US9923066B2Wide bandgap semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2016·Granted Mar 20, 2018·4 cites·25 claims
- 0979US10700182B2Semiconductor device with transistor cells and a drift structure and method of manufacturingINFINEON TECHNOLOGIES AG·Filed 2018·Granted Jun 30, 2020·2 cites·26 claims
- 1079US9530850B2Semiconductor device with stripe-shaped trench gate structures and gate connector structureINFINEON TECHNOLOGIES AG·Filed 2015·Granted Dec 27, 2016·2 cites·21 claims
- 1178US10217636B2Method of manufacturing a silicon carbide semiconductor device by removing amorphized portionsINFINEON TECHNOLOGIES AG·Filed 2018·Granted Feb 26, 2019·2 cites·17 claims
- 1275US2025279278A1Methods for forming Wide Band Gap Semiconductor Devices Using Different Reactive Gas SpeciesINFINEON TECHNOLOGIES AG·Filed 2025·Application pending·0 cites
- 1374US12107128B2Method of producing a semiconductor device having a ferroelectric gate stackINFINEON TECHNOLOGIES AG·Filed 2023·Granted Oct 1, 2024·0 cites·20 claims
- 1473US9960230B2Silicon-carbide transistor device with a shielded gateINFINEON TECHNOLOGIES AG·Filed 2017·Granted May 1, 2018·1 cites·20 claims
- 1569US11462611B2SiC device with channel regions extending along at least one of the (1-100) plane and the (-1100) plane and methods of manufacturing thereofINFINEON TECHNOLOGIES AG·Filed 2020·Granted Oct 4, 2022·0 cites·15 claims
- 1668US12341012B2Method for annealing a gate insulation layer on a wide band gap semiconductor substrateINFINEON TECHNOLOGIES AG·Filed 2022·Granted Jun 24, 2025·0 cites·23 claims
- 1768US12294018B2Vertical power semiconductor device including silicon carbide (sic) semiconductor bodyINFINEON TECHNOLOGIES AG·Filed 2024·Granted May 6, 2025·0 cites·18 claims
- 1868US11626477B2Silicon carbide field-effect transistor including shielding areasINFINEON TECHNOLOGIES AG·Filed 2021·Granted Apr 11, 2023·0 cites·23 claims
- 1968US10553685B2SiC semiconductor device with offset in trench bottomINFINEON TECHNOLOGIES AG·Filed 2018·Granted Feb 4, 2020·1 cites·24 claims
- 2066US10896952B2SiC device and methods of manufacturing thereofINFINEON TECHNOLOGIES AG·Filed 2020·Granted Jan 19, 2021·0 cites·16 claims
- 2166US2022246745A1Silicon Carbide Devices, Semiconductor Devices and Methods for Forming Silicon Carbide Devices and Semiconductor DevicesINFINEON TECHNOLOGIES AG·Filed 2022·Application pending·0 cites
- 2265US11791383B2Semiconductor device having a ferroelectric gate stackINFINEON TECHNOLOGIES AG·Filed 2021·Granted Oct 17, 2023·0 cites·23 claims
- 2363US11881512B2Method of manufacturing semiconductor device with silicon carbide bodyINFINEON TECHNOLOGIES AG·Filed 2021·Granted Jan 23, 2024·0 cites·14 claims
- 2463US11342433B2Silicon carbide devices, semiconductor devices and methods for forming silicon carbide devices and semiconductor devicesINFINEON TECHNOLOGIES AG·Filed 2019·Granted May 24, 2022·0 cites·15 claims
- 2562US2025056869A1Wide band gap semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2024·Application pending·0 cites
- 2661US2024405092A1Semiconductor device comprising a high-k gate dielectric multilayer laminate structure and a method for manufacturing thereofINFINEON TECHNOLOGIES AG·Filed 2024·Application pending·0 cites
- 2761US2025015148A1Transistor deviceINFINEON TECHNOLOGIES AG·Filed 2024·Application pending·0 cites
- 2860US11101343B2Silicon carbide field-effect transistor including shielding areasINFINEON TECHNOLOGIES AG·Filed 2019·Granted Aug 24, 2021·0 cites·20 claims
- 2959US2025151324A1Vertical power semiconductor device including a sensor electrodeINFINEON TECHNOLOGIES AG·Filed 2024·Application pending·0 cites
- 3059US2025006814A1Silicon carbide deviceINFINEON TECHNOLOGIES AG·Filed 2024·Application pending·0 cites
- 3159US2025107202A1Transistor DeviceINFINEON TECHNOLOGIES AG·Filed 2024·Application pending·0 cites
- 3258US11295951B2Wide band gap semiconductor device and method for forming a wide band gap semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2019·Granted Apr 5, 2022·0 cites·13 claims
- 3357US11195921B2Semiconductor device with silicon carbide bodyINFINEON TECHNOLOGIES AG·Filed 2019·Granted Dec 7, 2021·0 cites·16 claims
- 3457US2025089343A1Power semiconductor device including silicon carbide (sic) semiconductor bodyINFINEON TECHNOLOGIES AG·Filed 2024·Application pending·0 cites
- 3556US2018248000A1Vertical Transistor Device with a Variable Gate Dielectric ThicknessINFINEON TECHNOLOGIES AG·Filed 2018·Application pending·0 cites
- 3655US10734514B2Semiconductor device with trench gate structure including a gate electrode and a contact structure for a diode regionINFINEON TECHNOLOGIES AG·Filed 2018·Granted Aug 4, 2020·0 cites·19 claims
- 3755US2023163167A1Semiconductor device including a trench gate structureINFINEON TECHNOLOGIES AG·Filed 2022·Application pending·0 cites
- 3855US2023352520A1Wide band gap semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2023·Application pending·0 cites
- 3955US2025338550A1SEMICONDUCTOR DEVICE INCLUDING A SiC SEMICONDUCTOR BODYINFINEON TECHNOLOGIES AG·Filed 2025·Application pending·0 cites
- 4053US11417747B2Transistor device with a varying gate runner resistivity per areaINFINEON TECHNOLOGIES AG·Filed 2020·Granted Aug 16, 2022·0 cites·20 claims
- 4152US2025246433A1Method of forming a wide band gap semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2025·Application pending·0 cites
- 4252US2023178615A1Trench power device with enhanced charge carrier mobilityINFINEON TECHNOLOGIES AG·Filed 2022·Application pending·0 cites
- 4352US2022262906A1Sic mosfet with reduced on-resistanceINFINEON TECHNOLOGIES AG·Filed 2022·Application pending·0 cites
- 4451US2025323039A1Method of forming a sic/gate dielectric interface layer in a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2025·Application pending·0 cites
- 4550US11940489B2Semiconductor device having an optical device degradation sensorINFINEON TECHNOLOGIES AG·Filed 2021·Granted Mar 26, 2024·0 cites·21 claims
- 4650US9934972B2Method of manufacturing a silicon carbide semiconductor device by removing amorphized portionsINFINEON TECHNOLOGIES AG·Filed 2016·Granted Apr 3, 2018·0 cites·21 claims
- 4748US11251269B2Semiconductor device including trench gate structure and manufacturing methodINFINEON TECHNOLOGIES AG·Filed 2019·Granted Feb 15, 2022·0 cites·18 claims
- 4848US10393697B2Apparatus for analyzing ion kinetics in dielectricsINFINEON TECHNOLOGIES AG·Filed 2015·Granted Aug 27, 2019·0 cites·24 claims
- 4947US2017345905A1Wide-Bandgap Semiconductor Device with Trench Gate StructuresINFINEON TECHNOLOGIES AG·Filed 2016·Application pending·0 cites
- 5043US2020006544A1Semiconductor device including silicon carbide body and transistor cellsINFINEON TECHNOLOGIES AG·Filed 2019·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Thomas Aichinger files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →