Inventor · disambiguated record
Thamarai S. Devarajan
Also filed as: DEVARAJAN THAMARAI S · DEVARAJAN THAMARAI SELVI
19 granted patents·63 citations·filing 2015–2022
92Inventor score
Files withIBM19
Top patents by PatentIndex Score
19 records- 0197US9754798B1Hybridization fin reveal for uniform fin reveal depth across different fin pitchesIBM·Filed 2016·Granted Sep 5, 2017·17 cites·16 claims
- 0295US9691765B1Fin type field effect transistors with different pitches and substantially uniform fin revealIBM·Filed 2016·Granted Jun 27, 2017·12 cites·14 claims
- 0395US9679780B1Polysilicon residue removal in nanosheet MOSFETsIBM·Filed 2016·Granted Jun 13, 2017·11 cites·20 claims
- 0493US9443855B1Spacer formation on semiconductor deviceIBM·Filed 2015·Granted Sep 13, 2016·7 cites·17 claims
- 0586US10896816B2Silicon residue removal in nanosheet transistorsIBM·Filed 2017·Granted Jan 19, 2021·4 cites·20 claims
- 0686US10840354B2Approach to bottom dielectric isolation for vertical transport fin field effect transistorsIBM·Filed 2017·Granted Nov 17, 2020·3 cites·8 claims
- 0786US10629702B2Approach to bottom dielectric isolation for vertical transport fin field effect transistorsIBM·Filed 2018·Granted Apr 21, 2020·3 cites·9 claims
- 0882US10020229B2Fin type field effect transistors with different pitches and substantially uniform fin revealIBM·Filed 2017·Granted Jul 10, 2018·2 cites·20 claims
- 0981US11302797B2Approach to bottom dielectric isolation for vertical transport fin field effect transistorsIBM·Filed 2020·Granted Apr 12, 2022·1 cites·10 claims
- 1076US10366928B2Hybridization fin reveal for uniform fin reveal depth across different fin pitchesIBM·Filed 2017·Granted Jul 30, 2019·1 cites·18 claims
- 1173US9997352B2Polysilicon residue removal in nanosheet MOSFETsIBM·Filed 2017·Granted Jun 12, 2018·1 cites·20 claims
- 1270US10242882B2Cyclic etch process to remove dummy gate oxide layer for fin field effect transistor fabricationIBM·Filed 2017·Granted Mar 26, 2019·1 cites·16 claims
- 1362US10163721B2Hybridization fin reveal for uniform fin reveal depth across different fin pitchesIBM·Filed 2017·Granted Dec 25, 2018·0 cites·20 claims
- 1461US10388571B2Fin type field effect transistors with different pitches and substantially uniform fin revealIBM·Filed 2018·Granted Aug 20, 2019·0 cites·20 claims
- 1560US12494408B2Double patterned microcooler having alternating fin widthsIBM·Filed 2021·Granted Dec 9, 2025·0 cites·16 claims
- 1660US9935015B1Hybridization fin reveal for uniform fin reveal depth across different fin pitchesIBM·Filed 2017·Granted Apr 3, 2018·0 cites·19 claims
- 1759US10355109B2Spacer formation on semiconductor deviceIBM·Filed 2017·Granted Jul 16, 2019·0 cites·3 claims
- 1857US12148699B2High aspect ratio buried power rail metallizationIBM·Filed 2022·Granted Nov 19, 2024·0 cites·15 claims
- 1956US9911831B2Spacer formation on semiconductor deviceIBM·Filed 2016·Granted Mar 6, 2018·0 cites·10 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →