Inventor · disambiguated record
Theodore Letavic
Also filed as: LETAVIC THEODORE · LETAVIC THEODORE J · LETAVIC THEODORE JAMES
54 granted patents·9 pending applications·1,345 citations·filing 1996–2024
98Inventor score
Files withPHILIPS ELECTRONICS NA14KONINKL PHILIPS ELECTRONICS NV11NXP BV10GLOBALFOUNDRIES US INC9IBM6
Top patents by PatentIndex Score
63 records- 0197US11536903B1Hybrid edge couplers with stacked inverse tapersGLOBALFOUNDRIES US INC·Filed 2021·Granted Dec 27, 2022·7 cites·20 claims
- 0296US5986331AMicrowave monolithic integrated circuit with coplaner waveguide having silicon-on-insulator composite substratePHILIPS ELECTRONICS NA·Filed 1996·Granted Nov 16, 1999·255 cites·4 claims
- 0394US10795082B1Bragg gratings with airgap claddingGLOBALFOUNDRIES INC·Filed 2019·Granted Oct 6, 2020·12 cites·20 claims
- 0494US6346451B1Laterial thin-film silicon-on-insulator (SOI) device having a gate electrode and a field plate electrodePHILIPS ELECTRONICS NA·Filed 1999·Granted Feb 12, 2002·234 cites·11 claims
- 0593US11846804B2Thermally-conductive features positioned adjacent to an optical componentGLOBALFOUNDRIES US INC·Filed 2022·Granted Dec 19, 2023·2 cites·19 claims
- 0693US10818807B2Semiconductor detectors integrated with Bragg reflectorsGLOBALFOUNDRIES INC·Filed 2019·Granted Oct 27, 2020·4 cites·10 claims
- 0792US6313489B1Lateral thin-film silicon-on-insulator (SOI) device having a lateral drift region with a retrograde doping profile, and method of making such a devicePHILIPS ELECTRONICS NA·Filed 1999·Granted Nov 6, 2001·137 cites·4 claims
- 0890US6468878B1SOI LDMOS structure with improved switching characteristicsKONINKL PHILIPS ELECTRONICS NV·Filed 2001·Granted Oct 22, 2002·56 cites·13 claims
- 0990US6310378B1High voltage thin film transistor with improved on-state characteristics and method for making samePHILIPS ELECTRONICS NA·Filed 2000·Granted Oct 30, 2001·57 cites·9 claims
- 1090US6127703ALateral thin-film silicon-on-insulator (SOI) PMOS device having a drain extension regionPHILIPS ELECTRONICS NA·Filed 1999·Granted Oct 3, 2000·97 cites·6 claims
- 1185US9799652B1Semiconductor structure with a dopant implant region having a linearly graded conductivity level and method of forming the structureGLOBALFOUNDRIES INC·Filed 2017·Granted Oct 24, 2017·3 cites·20 claims
- 1284US5973341ALateral thin-film silicon-on-insulator (SOI) JFET devicePHILIPS ELECTRONICS NA·Filed 1998·Granted Oct 26, 1999·67 cites·6 claims
- 1383US9337310B2Low leakage, high frequency devicesIBM·Filed 2014·Granted May 10, 2016·5 cites·18 claims
- 1483US8901710B2Interdigitated capacitors with a zero quadratic voltage coefficient of capacitance or zero linear temperature coefficient of capacitanceIBM·Filed 2013·Granted Dec 2, 2014·7 cites·20 claims
- 1583US6794719B2HV-SOI LDMOS device with integrated diode to improve reliability and avalanche ruggednessKONINKL PHILIPS ELECTRONICS NV·Filed 2001·Granted Sep 21, 2004·32 cites·5 claims
- 1681US6191453B1Lateral insulated-gate bipolar transistor (LIGBT) device in silicon-on-insulator (SOI) technologyPHILIPS ELECTRONICS NA·Filed 1999·Granted Feb 20, 2001·59 cites·5 claims
- 1780US8299547B2Lateral extended drain metal oxide semiconductor field effect transistor (LEDMOSFET) with tapered dielectric platesABOU-KHALIL MICHEL J·Filed 2011·Granted Oct 30, 2012·5 cites·24 claims
- 1879US9768028B1Semiconductor structure with a dopant implant region having a linearly graded conductivity level and method of forming the structureGLOBALFOUNDRIES INC·Filed 2016·Granted Sep 19, 2017·2 cites·19 claims
- 1979US6023090ALateral thin-film Silicon-On-Insulator (SOI) device having multiple zones in the drift regionPHILIPS ELECTRONICS NA·Filed 1998·Granted Feb 8, 2000·46 cites·9 claims
- 2078US12174420B2Thermally-conductive features positioned adjacent to an optical componentGLOBALFOUNDRIES US INC·Filed 2023·Granted Dec 24, 2024·0 cites·20 claims
- 2177US6093624AMethod of providing a gettering scheme in the manufacture of silicon-on-insulator (SOI) integrated circuitsPHILIPS ELECTRONICS NA·Filed 1997·Granted Jul 25, 2000·54 cites·9 claims
- 2276US7989875B2BiCMOS integration of multiple-times-programmable non-volatile memoriesNXP BV·Filed 2008·Granted Aug 2, 2011·11 cites·17 claims
- 2375US8787116B2Collapsed mode operable cMUT including contoured substratePETRUZZELLO JOHN·Filed 2008·Granted Jul 22, 2014·10 cites·17 claims
- 2473US9236449B2High voltage laterally diffused metal oxide semiconductorIBM·Filed 2013·Granted Jan 12, 2016·3 cites·18 claims
- 2573US9059276B2High voltage laterally diffused metal oxide semiconductorIBM·Filed 2013·Granted Jun 16, 2015·3 cites·19 claims
- 2668US6717214B2SOI-LDMOS device with integral voltage sense electrodesKONINKL PHILIPS ELECTRONICS NV·Filed 2002·Granted Apr 6, 2004·15 cites·7 claims
- 2767US8395323B2Reliable lighting systemWENDT MATTHIAS·Filed 2008·Granted Mar 12, 2013·2 cites·6 claims
- 2866US6518814B1High-voltage capacitor voltage divider circuit having a high-voltage silicon-on-insulation (SOI) capacitorKONINKL PHILIPS ELECTRONICS NV·Filed 1999·Granted Feb 11, 2003·25 cites·13 claims
- 2966US5969387ALateral thin-film SOI devices with graded top oxide and graded drift regionPHILIPS ELECTRONICS NA·Filed 1998·Granted Oct 19, 1999·27 cites·10 claims
- 3065US11828984B2Thermal management of an optical component for temperature controlGLOBALFOUNDRIES US INC·Filed 2022·Granted Nov 28, 2023·0 cites·20 claims
- 3163US6028337ALateral thin-film silicon-on-insulator (SOI) device having lateral depletion means for depleting a portion of drift regionPHILIPS NORTH AMERICA CORP·Filed 1998·Granted Feb 22, 2000·26 cites·6 claims
- 3259US11934021B2Photonic devices integrated with thermally conductive layersGLOBALFOUNDRIES US INC·Filed 2022·Granted Mar 19, 2024·0 cites·18 claims
- 3359US11822120B2Optical components with enhanced heat dissipationGLOBALFOUNDRIES US INC·Filed 2022·Granted Nov 21, 2023·0 cites·20 claims
- 3459US6833726B2SOI-LDMOS device with integral voltage sense electrodesKONINKL PHILIPS ELECTRONICS NV·Filed 2004·Granted Dec 21, 2004·7 cites·10 claims
- 3559US6221737B1Method of making semiconductor devices with graded top oxide and graded drift regionPHILIPS ELECTRONICS NA·Filed 1999·Granted Apr 24, 2001·25 cites·17 claims
- 3658US2025237894A1Semiconductor layers formed by lateral epitaxial growthGLOBALFOUNDRIES US INC·Filed 2024·Application pending·0 cites
- 3756US2025208341A1Waveguide escalators for a photonics chipGLOBALFOUNDRIES US INC·Filed 2023·Application pending·0 cites
- 3855US6232636B1Lateral thin-film silicon-on-insulator (SOI) device having multiple doping profile slopes in the drift regionPHILIPS ELECTRONICS NA·Filed 1998·Granted May 15, 2001·16 cites·8 claims
- 3954US7737524B2Lateral thin-film SOI device having a field plate with isolated metallic regionsNXP BV·Filed 2004·Granted Jun 15, 2010·6 cites·14 claims
- 4053US7268046B2Dual gate oxide high-voltage semiconductor device and method for forming the sameKONINKL PHILIPS ELECTRONICS NV·Filed 2004·Granted Sep 11, 2007·4 cites·8 claims
- 4153US2025272465A1Three-dimensional integrated circuit (3dic) and 3dic design method and systemGLOBALFOUNDRIES US INC·Filed 2024·Application pending·0 cites
- 4252US8482067B2Lateral extended drain metal oxide semiconductor field effect transistor (LEDMOSFET) with tapered dielectric plates to achieve a high drain-to-body breakdown voltage, a method of forming the transistor and a program storage device for designing the transistorABOU-KHALIL MICHEL J·Filed 2012·Granted Jul 9, 2013·0 cites·20 claims
- 4352US6847081B2Dual gate oxide high-voltage semiconductor deviceKONINKL PHILIPS ELECTRONICS NV·Filed 2001·Granted Jan 25, 2005·4 cites·13 claims
- 4448US9240463B2High voltage laterally diffused metal oxide semiconductorIBM·Filed 2013·Granted Jan 19, 2016·0 cites·15 claims
- 4548US6627958B2Lateral high voltage semiconductor device having a sense terminal and method for sensing a drain voltage of the sameKONINKL PHILIPS ELECTRONICS NV·Filed 2001·Granted Sep 30, 2003·3 cites·20 claims
- 4647US7659584B2Substrate isolated integrated high voltage diode integrated within a unit cellNXP BV·Filed 2006·Granted Feb 9, 2010·0 cites·20 claims
- 4746US6661059B1Lateral insulated gate bipolar PMOS deviceKONINKL PHILIPS ELECTRONICS NV·Filed 2002·Granted Dec 9, 2003·3 cites·7 claims
- 4845US7989881B2Semiconductor device structure with a tapered field plate and cylindrical drift region geometryNXP BV·Filed 2006·Granted Aug 2, 2011·0 cites·17 claims
- 4945US2008303092A1Asymetrical Field-Effect Semiconductor Device with Sti RegionNXP BV·Filed 2006·Application pending·0 cites
- 5043US7439585B2Silicon-on-insulator deviceNXP BV·Filed 2004·Granted Oct 21, 2008·0 cites·19 claims
Showing the top 50 of 63 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →