Inventor · disambiguated record
Thomas Meister
Also filed as: MEISTER THOMAS · MEISTER THOMAS J
26 granted patents·2 pending applications·358 citations·filing 1991–2022
96Inventor score
Top patents by PatentIndex Score
28 records- 0188US8067290B2Bipolar transistor with base-collector-isolation without dielectricBOECK JOSEF·Filed 2009·Granted Nov 29, 2011·19 cites·12 claims
- 0288US7449389B2Method for fabricating a semiconductor structureINFINEON TECHNOLOGIES AG·Filed 2006·Granted Nov 11, 2008·16 cites·16 claims
- 0385US5193375AMethod for enhancing the wear performance and life characteristics of a brake drumMETAL IMPROVEMENT CO·Filed 1991·Granted Mar 16, 1993·35 cites·5 claims
- 0483US5432120AMethod for producing a laterally limited single-crystal region with selective epitaxy and the employment thereof for manufacturing a bipolar transistor as well as a MOS transistorSIEMENS AG·Filed 1993·Granted Jul 11, 1995·88 cites·16 claims
- 0579US7719088B2High-frequency bipolar transistorINFINEON TECHNOLOGIES AG·Filed 2005·Granted May 18, 2010·7 cites·12 claims
- 0679US7420228B2Bipolar transistor comprising carbon-doped semiconductorINFINEON TECHNOLOGIES AG·Filed 2005·Granted Sep 2, 2008·8 cites·2 claims
- 0779US7105415B2Method for the production of a bipolar transistorINFINEON TECHNOLOGIES AG·Filed 2005·Granted Sep 12, 2006·8 cites·10 claims
- 0875US7285470B2Method for the production of a bipolar semiconductor component, especially a bipolar transistor, and corresponding bipolar semiconductor componentINFINEON TECHNOLOGIES AG·Filed 2005·Granted Oct 23, 2007·6 cites·5 claims
- 0972US8102052B2Process for the simultaneous deposition of crystalline and amorphous layers with dopingSCHAEFER HERBERT·Filed 2011·Granted Jan 24, 2012·2 cites·1 claims
- 1070US7947552B2Process for the simultaneous deposition of crystalline and amorphous layers with dopingINFINEON TECHNOLOGIES AG·Filed 2008·Granted May 24, 2011·2 cites·19 claims
- 1168US8003475B2Method for fabricating a transistor structureINFINEON TECHNOLOGIES AG·Filed 2008·Granted Aug 23, 2011·2 cites·10 claims
- 1268US7968972B2High-frequency bipolar transistor and method for the production thereofINFINEON TECHNOLOGIES AG·Filed 2010·Granted Jun 28, 2011·2 cites·8 claims
- 1367US5326718AMethod for manufacturing a laterally limited, single-crystal region on a substrate and the employment thereof for the manufacture of an MOS transistor and a bipolar transistorSIEMENS AG·Filed 1992·Granted Jul 5, 1994·33 cites·7 claims
- 1466US6635545B2Method for fabricating a bipolar transistor and method for fabricating an integrated circuit configuration having such a bipolar transistorINFINEON TECHNOLOGIES AG·Filed 2002·Granted Oct 21, 2003·13 cites·10 claims
- 1562US7371650B2Method for producing a transistor structureINFINEON TECHNOLOGIES AG·Filed 2003·Granted May 13, 2008·7 cites·7 claims
- 1660US5402002ABipolar transistor with reduced base/collector capacitanceSIEMENS AG·Filed 1991·Granted Mar 28, 1995·20 cites·6 claims
- 1758US2024429782A1Motor arrangement for a shaping device, motor for a shaping device, holding body, shaping device, use of a motor and a holding body, and method for cooling a motorMEISTER THOMAS·Filed 2022·Application pending·0 cites
- 1857US5643836AMethod for producing a semiconductor layer structure having a planarized surface and the use thereof in the manufacture of bipolar transistors and DRAMSSIEMENS AG·Filed 1994·Granted Jul 1, 1997·26 cites·10 claims
- 1956US7612430B2Silicon bipolar transistor, circuit arrangement and method for producing a silicon bipolar transistorINFINEON TECHNOLOGIES AG·Filed 2001·Granted Nov 3, 2009·7 cites·14 claims
- 2055US5498567AMethod for manufacturing a laterally limited, single-crystal region on a substrate and the employment thereof for the manufacture of an MOS transistor and a bipolar transistorSIEMENS AG·Filed 1995·Granted Mar 12, 1996·16 cites·7 claims
- 2155US5177582ACMOS-compatible bipolar transistor with reduced collector/substrate capacitance and process for producing the sameSIEMENS AG·Filed 1991·Granted Jan 5, 1993·17 cites·5 claims
- 2252US8329532B2Process for the simultaneous deposition of crystalline and amorphous layers with dopingSCHAEFER HERBERT·Filed 2011·Granted Dec 11, 2012·0 cites·20 claims
- 2352US5422303AMethod for manufacturing a laterally limited, single-crystal region on a substrate and the employment thereof for the manufacture of an MOS transistor and a bipolar transistorSIEMENS AG·Filed 1994·Granted Jun 6, 1995·17 cites·17 claims
- 2451US6867105B2Bipolar transistor and method of fabricating a bipolar transistorINFINEON TECHNOLOGIES AG·Filed 2002·Granted Mar 15, 2005·4 cites·10 claims
- 2545US7064360B2Bipolar transistor and method for fabricating itINFINEON TECHNOLOGIES AG·Filed 2002·Granted Jun 20, 2006·2 cites·21 claims
- 2643US7135757B2Bipolar transistorINFINEON TECHNOLOGIES AG·Filed 2004·Granted Nov 14, 2006·1 cites·12 claims
- 2741US2007222032A1Bipolar transistor and method for producing a bipolar transistorINFINEON TECHNOLOGIES AG·Filed 2007·Application pending·0 cites
- 2833US7256472B2Bipolar transistorINFINEON TECHNOLOGIES AG·Filed 2003·Granted Aug 14, 2007·0 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →