Inventor · disambiguated record
Thomas J. Miller
Also filed as: MILLER JR THOMAS J · MILLER JR THOMAS JAMES · MILLER THOMAS · MILLER THOMAS J
37 granted patents·6 pending applications·343 citations·filing 1995–2011
97Inventor score
Files with3M INNOVATIVE PROPERTIES CO18HAASE MICHAEL A7MINNESOTA MINING & MFG4MILLER THOMAS J3TRIQUINT TECHNOLOGY HOLDING CO3
Top patents by PatentIndex Score
43 records- 0194US7402831B2Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission3M INNOVATIVE PROPERTIES CO·Filed 2004·Granted Jul 22, 2008·68 cites·3 claims
- 0292US7700939B2Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission3M INNOVATIVE PROPERTIES CO·Filed 2008·Granted Apr 20, 2010·17 cites·8 claims
- 0390US6873638B2Laser diode chip with waveguide3M INNOVATIVE PROPERTIES CO·Filed 2002·Granted Mar 29, 2005·38 cites·26 claims
- 0488US7902542B2Adapted LED device with re-emitting semiconductor construction3M INNOVATIVE PROPERTIES CO·Filed 2007·Granted Mar 8, 2011·13 cites·10 claims
- 0586US7737430B2Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission3M INNOVATIVE PROPERTIES CO·Filed 2006·Granted Jun 15, 2010·9 cites·11 claims
- 0686US7700938B2Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission3M INNOVATIVE PROPERTIES CO·Filed 2008·Granted Apr 20, 2010·9 cites·35 claims
- 0783US8541803B2Cadmium-free re-emitting semiconductor constructionSMITH TERRY L·Filed 2010·Granted Sep 24, 2013·4 cites·18 claims
- 0882US9293622B2Re-emitting semiconductor carrier devices for use with LEDs and methods of manufactureSMITH TERRY L·Filed 2010·Granted Mar 22, 2016·4 cites·9 claims
- 0982US8338838B2Down-converted light source with uniform wavelength emissionSUN XIAOGUANG·Filed 2008·Granted Dec 25, 2012·12 cites·19 claims
- 1082US7902543B2Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission3M INNOVATIVE PROPERTIES CO·Filed 2010·Granted Mar 8, 2011·4 cites·33 claims
- 1181US8148741B2Polychromatic LED's and related semiconductor devicesMILLER THOMAS J·Filed 2010·Granted Apr 3, 2012·3 cites·5 claims
- 1279US8835963B2Light converting and emitting device with minimal edge recombinationHAASE MICHAEL A·Filed 2011·Granted Sep 16, 2014·3 cites·27 claims
- 1378US8488641B2II-VI MQW VSEL on a heat sink optically pumped by a GaN LDHAASE MICHAEL A·Filed 2009·Granted Jul 16, 2013·7 cites·17 claims
- 1476US7126160B2II-VI/III-V layered construction on InP substrate3M INNOVATIVE PROPERTIES CO·Filed 2004·Granted Oct 24, 2006·25 cites·35 claims
- 1576US7119377B2II-VI/III-V layered construction on InP substrate3M INNOVATIVE PROPERTIES CO·Filed 2005·Granted Oct 10, 2006·6 cites·13 claims
- 1675US8710533B2Multicolored light converting LED with minimal absorptionHAASE MICHAEL A·Filed 2011·Granted Apr 29, 2014·4 cites·20 claims
- 1768US6677830B2Broadband matching network for an electroabsorption optical modulatorTRIQUINT TECHNOLOGY HOLDING CO·Filed 2001·Granted Jan 13, 2004·8 cites·13 claims
- 1863US8994071B2Semiconductor devices grown on indium-containing substrates utilizing indium depletion mechanismsMILLER THOMAS J·Filed 2010·Granted Mar 31, 2015·1 cites·12 claims
- 1959US7719015B2Type II broadband or polychromatic LED's3M INNOVATIVE PROPERTIES CO·Filed 2004·Granted May 18, 2010·6 cites·36 claims
- 2059US6583450B1II-VI semiconductor device with BeTe buffer layer3M INNOVATIVE PROPERTIES CO·Filed 2000·Granted Jun 24, 2003·5 cites·8 claims
- 2157US7745814B2Polychromatic LED's and related semiconductor devices3M INNOVATIVE PROPERTIES CO·Filed 2004·Granted Jun 29, 2010·6 cites·30 claims
- 2257US6759690B2II-VI semiconductor device with BeTe buffer layer3M INNOVATIVE PROPERTIES CO·Filed 2003·Granted Jul 6, 2004·4 cites·8 claims
- 2356US6302701B1RF connector with impedance matching tabAGERE SYST OPTOELECTRONICS·Filed 2000·Granted Oct 16, 2001·10 cites·8 claims
- 2454US8148742B2Type II broadband or polychromatic LEDsMILLER THOMAS J·Filed 2010·Granted Apr 3, 2012·0 cites·5 claims
- 2549US9053959B2Semiconductor light converting constructionHAASE MICHAEL A·Filed 2009·Granted Jun 9, 2015·0 cites·15 claims
- 2649US5879962AIII-V/II-VI Semiconductor interface fabrication methodMINNESOTA MINING & MFG·Filed 1995·Granted Mar 9, 1999·17 cites·28 claims
- 2747US5818859ABe-containing II-VI blue-green laser diodesMINNESOTA MINING & MFG·Filed 1996·Granted Oct 6, 1998·17 cites·22 claims
- 2847US2011140129A1Light source with improved monochromaticityLEATHERDALE CATHERINE A·Filed 2009·Application pending·0 cites
- 2947US2011156002A1Light source having light blocking componentsLEATHERDALE CATHERINE A·Filed 2009·Application pending·0 cites
- 3047US2011186877A1Light emitting diode with bonded semiconductor wavelength converterHAASE MICHAEL A·Filed 2009·Application pending·0 cites
- 3146US9431584B2Light converting and emitting device with suppressed dark-line defectsHAASE MICHAEL A·Filed 2011·Granted Aug 30, 2016·0 cites·17 claims
- 3246US6058123ASelective etch for II-VI semiconductors3M INNOVATIVE PROPERTIES CO·Filed 1997·Granted May 2, 2000·10 cites·27 claims
- 3346US2011121319A1Semiconductor light emitting device and method of making sameHAASE MICHAEL A·Filed 2008·Application pending·0 cites
- 3445US6788447B2Off-chip matching circuit for electroabsorption optical modulatorTRIQUINT TECHNOLOGY HOLDING CO·Filed 2002·Granted Sep 7, 2004·1 cites·7 claims
- 3544US7457392B2Delay locked loopINFINEON TECHNOLOGIES AG·Filed 2002·Granted Nov 25, 2008·3 cites·9 claims
- 3644US2007284565A1Led device with re-emitting semiconductor construction and optical element3M INNOVATIVE PROPERTIES CO·Filed 2007·Application pending·0 cites
- 3740US5767534APassivation capping layer for ohmic contact in II-VI semiconductor light transducing deviceMINNESOTA MINING & MFG·Filed 1997·Granted Jun 16, 1998·7 cites·46 claims
- 3839US2005135725A1Laser submounts with standoff structures3M INNOVATIVE PROPERTIES CO·Filed 2003·Application pending·0 cites
- 3938US6090637AFabrication of II-VI semiconductor device with BeTe buffer layer3M INNOVATIVE PROPERTIES CO·Filed 1997·Granted Jul 18, 2000·5 cites·7 claims
- 4037US5834330ASelective etch method for II-VI semiconductorsMINNESOTA MINING & MFG·Filed 1996·Granted Nov 10, 1998·5 cites·115 claims
- 4136US6618407B1Uncooled universal laser moduleTRIQUINT TECHNOLOGY HOLDING CO·Filed 1998·Granted Sep 9, 2003·8 cites·58 claims
- 4234US6055352AOptical wavelength optimization for high speed WDM transmission systemLUCENT TECHNOLOGIES INC·Filed 1997·Granted Apr 25, 2000·4 cites·4 claims
- 4330US6376273B2Passivation capping layer for ohmic contact in II-VI semiconductor light transducing device3M INNOVATIVE PROPERTIES CO·Filed 1998·Granted Apr 23, 2002·0 cites·19 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →