Inventor · disambiguated record
Thomas Nirschl
Also filed as: NIRSCHL THOMAS
67 granted patents·16 pending applications·635 citations·filing 2002–2015
99Inventor score
Files withINFINEON TECHNOLOGIES AG41NIRSCHL THOMAS14QIMONDA NORTH AMERICA CORP7OTTERSTEDT JAN3QIMONDA AG3
Top patents by PatentIndex Score
83 records- 0198US7786464B2Integrated circuit having dielectric layer including nanocrystalsINFINEON TECHNOLOGIES AG·Filed 2007·Granted Aug 31, 2010·103 cites·23 claims
- 0298US7515461B2Current compliant sensing architecture for multilevel phase change memoryMACRONIX INT CO LTD·Filed 2007·Granted Apr 7, 2009·93 cites·20 claims
- 0394US7619917B2Memory cell with trigger elementQIMONDA NORTH AMERICA CORP·Filed 2006·Granted Nov 17, 2009·34 cites·31 claims
- 0494US7292466B2Integrated circuit having a resistive memoryINFINEON TECHNOLOGIES AG·Filed 2006·Granted Nov 6, 2007·33 cites·24 claims
- 0591US7593255B2Integrated circuit for programming a memory elementQIMONDA NORTH AMERICA CORP·Filed 2007·Granted Sep 22, 2009·24 cites·22 claims
- 0687US7778070B2Memory with dynamic redundancy configurationQIMONDA AG·Filed 2008·Granted Aug 17, 2010·17 cites·9 claims
- 0787US7436695B2Resistive memory including bipolar transistor access devicesINFINEON TECHNOLOGIES AG·Filed 2006·Granted Oct 14, 2008·20 cites·35 claims
- 0886US7570507B2Quasi-differential read operationINFINEON TECHNOLOGIES CORP·Filed 2007·Granted Aug 4, 2009·17 cites·24 claims
- 0985US7580297B2Readout of multi-level storage cellsINFINEON TECHNOLOGIES AG·Filed 2007·Granted Aug 25, 2009·15 cites·12 claims
- 1085US7304342B2Semiconductor memory cell and associated fabrication methodINFINEON TECHNOLOGIES AG·Filed 2005·Granted Dec 4, 2007·14 cites·11 claims
- 1184US8629500B2Integrated circuit arrangement comprising a field effect transistor, especially a tunnel field effect transistorHOLZ JUERGEN·Filed 2005·Granted Jan 14, 2014·12 cites·23 claims
- 1284US7986024B2Fuse sensing schemeINFINEON TECHNOLOGIES AG·Filed 2007·Granted Jul 26, 2011·12 cites·19 claims
- 1383US7692949B2Multi-bit resistive memoryQIMONDA NORTH AMERICA CORP·Filed 2006·Granted Apr 6, 2010·12 cites·38 claims
- 1483US7646625B2Conditioning operations for memory cellsQIMONDA AG·Filed 2007·Granted Jan 12, 2010·14 cites·27 claims
- 1583US7345899B2Memory having storage locations within a common volume of phase change materialINFINEON TECHNOLOGIES AG·Filed 2006·Granted Mar 18, 2008·12 cites·21 claims
- 1682US8159857B2Electronic device with a programmable resistive element and a method for blocking a deviceGAMMEL BERNDT·Filed 2009·Granted Apr 17, 2012·12 cites·28 claims
- 1782US7541609B2Phase change memory cell having a sidewall contactIBM·Filed 2006·Granted Jun 2, 2009·10 cites·25 claims
- 1879US8384429B2Integrated circuit and method for manufacturing sameINFINEON TECHNOLOGIES AG·Filed 2010·Granted Feb 26, 2013·5 cites·18 claims
- 1979US8344429B2Compact memory arraysINFINEON TECHNOLOGIES AG·Filed 2008·Granted Jan 1, 2013·7 cites·4 claims
- 2079US7995381B2Method of programming resistivity changing memoryINFINEON TECHNOLOGIES AG·Filed 2008·Granted Aug 9, 2011·11 cites·24 claims
- 2179US7982488B2Phase-change memory security deviceINFINEON TECHNOLOGIES AG·Filed 2009·Granted Jul 19, 2011·11 cites·20 claims
- 2279US7474555B2Integrated circuit including resistivity changing material elementNIRSCHL THOMAS·Filed 2006·Granted Jan 6, 2009·9 cites·19 claims
- 2377US10319460B2Systems and methods utilizing a flexible read reference for a dynamic read windowINFINEON TECHNOLOGIES AG·Filed 2013·Granted Jun 11, 2019·6 cites·17 claims
- 2476US7679963B2Integrated circuit having a drive circuitINFINEON TECHNOLOGIES AG·Filed 2005·Granted Mar 16, 2010·6 cites·30 claims
- 2575US7864565B2Data retention monitorINFINEON TECHNOLOGIES AG·Filed 2007·Granted Jan 4, 2011·9 cites·10 claims
- 2675US7504695B2SRAM memory cell and method for compensating a leakage current flowing into the SRAM memory cellINFINEON TECHNOLOGIES AG·Filed 2005·Granted Mar 17, 2009·10 cites·18 claims
- 2774US8389973B2Memory using tunneling field effect transistorsNIRSCHL THOMAS·Filed 2010·Granted Mar 5, 2013·3 cites·9 claims
- 2874US7876079B2System and method for regulating a power supplyINFINEON TECHNOLOGIES AG·Filed 2009·Granted Jan 25, 2011·8 cites·21 claims
- 2974US7545019B2Integrated circuit including logic portion and memory portionQIMONDA NORTH AMERICA CORP·Filed 2007·Granted Jun 9, 2009·8 cites·20 claims
- 3073US7880160B2Memory using tunneling field effect transistorsQIMONDA AG·Filed 2006·Granted Feb 1, 2011·4 cites·4 claims
- 3172US9070439B2Electronic device with a programmable resistive element and a method for blocking a deviceGAMMEL BERNDT·Filed 2012·Granted Jun 30, 2015·4 cites·12 claims
- 3271US8320189B2System and method for bit-line control using a driver and a pre-driverNIRSCHL THOMAS·Filed 2011·Granted Nov 27, 2012·3 cites·23 claims
- 3371US8243532B2NVM overlapping write methodNIRSCHL THOMAS·Filed 2010·Granted Aug 14, 2012·5 cites·20 claims
- 3471US7577023B2Memory including write circuit for providing multiple reset pulsesQIMONDA NORTH AMERICA CORP·Filed 2007·Granted Aug 18, 2009·7 cites·24 claims
- 3569US9219063B2Integrated circuit arrangement comprising a field effect transistor, especially a tunnel field effect transistorINFINEON TECHNOLOGIES AG·Filed 2014·Granted Dec 22, 2015·2 cites·20 claims
- 3668US6724672B2Integrated memory having a precharge circuit for precharging a bit lineINFINEON TECHNOLOGIES AG·Filed 2002·Granted Apr 20, 2004·15 cites·6 claims
- 3767US8009481B2System and method for bit-line controlINFINEON TECHNOLOGIES AG·Filed 2009·Granted Aug 30, 2011·4 cites·21 claims
- 3867US7531420B2Semiconductor memory cell and corresponding method of producing sameINFINEON TECHNOLOGIES AG·Filed 2006·Granted May 12, 2009·4 cites·16 claims
- 3965US7327593B2ROM memory cell having defined bit line voltagesINFINEON TECHNOLOGIES AG·Filed 2005·Granted Feb 5, 2008·6 cites·12 claims
- 4064US7499344B2Integrated circuit memory having a read circuitINFINEON TECHNOLOGIES AG·Filed 2006·Granted Mar 3, 2009·5 cites·8 claims
- 4162US8437175B2System and method for level shifterNIRSCHL THOMAS·Filed 2012·Granted May 7, 2013·2 cites·21 claims
- 4261US7652914B2Memory including two access devices per phase change elementQIMONDA NORTH AMERICA CORP·Filed 2007·Granted Jan 26, 2010·4 cites·16 claims
- 4359US8743630B2Current sense amplifier with replica bias schemeMUELLER DAVID·Filed 2011·Granted Jun 3, 2014·2 cites·17 claims
- 4458US8288813B2Integrated memory device having columns having multiple bit linesKAKOSCHKE RONALD·Filed 2004·Granted Oct 16, 2012·7 cites·12 claims
- 4556US9240225B2Current sense amplifier with replica bias schemeINFINEON TECHNOLOGIES AG·Filed 2014·Granted Jan 19, 2016·1 cites·12 claims
- 4656US7974114B2Memory cell arrangementsINFINEON TECHNOLOGIES AG·Filed 2009·Granted Jul 5, 2011·3 cites·33 claims
- 4756US7427882B2Method and apparatus for switching on a voltage supply of a semiconductor circuit and corresponding semiconductor circuitINFINEON TECHNOLOGIES AG·Filed 2006·Granted Sep 23, 2008·2 cites·22 claims
- 4853US8509007B2Hybrid read scheme for multi-level dataNIRSCHL THOMAS·Filed 2012·Granted Aug 13, 2013·1 cites·21 claims
- 4953US8502276B2Compact memory arraysINFINEON TECHNOLOGIES AG·Filed 2012·Granted Aug 6, 2013·0 cites·24 claims
- 5053US7582546B2Device with damaged breakdown layerINFINEON TECHNOLOGIES AG·Filed 2007·Granted Sep 1, 2009·2 cites·44 claims
Showing the top 50 of 83 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →