Inventor · disambiguated record
Thomas Roehr
Also filed as: ROEHR THOMAS
38 granted patents·4 pending applications·514 citations·filing 2001–2021
98Inventor score
Top patents by PatentIndex Score
42 records- 0198US7215568B2Resistive memory arrangementINFINEON TECHNOLOGIES AG·Filed 2005·Granted May 8, 2007·85 cites·15 claims
- 0297US7251152B2Memory circuit having memory cells which have a resistance memory elementINFINEON TECHNOLOGIES AG·Filed 2005·Granted Jul 31, 2007·80 cites·27 claims
- 0387US7499349B2Memory with resistance memory cell and evaluation circuitINFINEON TECHNOLOGIES AG·Filed 2007·Granted Mar 3, 2009·20 cites·11 claims
- 0486US7289350B2Electronic device with a memory cellINFINEON TECHNOLOGIES AG·Filed 2005·Granted Oct 30, 2007·18 cites·23 claims
- 0586US7257013B2Method for writing data into a memory cell of a conductive bridging random access memory, memory circuit and CBRAM memory circuitINFINEON TECHNOLOGIES AG·Filed 2005·Granted Aug 14, 2007·18 cites·23 claims
- 0684US7327603B2Memory device including electrical circuit configured to provide reversible bias across the PMC memory cell to perform erase and write functionsINFINEON TECHNOLOGIES AG·Filed 2005·Granted Feb 5, 2008·13 cites·29 claims
- 0782US7372716B2Memory having CBRAM memory cells and methodINFINEON TECHNOLOGIES AG·Filed 2005·Granted May 13, 2008·13 cites·14 claims
- 0881US7561460B2Resistive memory arrangementINFINEON TECHNOLOGIES AG·Filed 2007·Granted Jul 14, 2009·11 cites·20 claims
- 0978US6577527B2Method for preventing unwanted programming in an MRAM configurationINFINEON TECHNOLOGIES AG·Filed 2001·Granted Jun 10, 2003·26 cites·6 claims
- 1076US7495945B2Non-volatile memory cell for storage of a data item in an integrated circuitINFINEON TECHNOLOGIES AG·Filed 2006·Granted Feb 24, 2009·10 cites·18 claims
- 1176US6972427B2Switching device for reconfigurable interconnect and method for making the sameINFINEON TECHNOLOGIES AG·Filed 2004·Granted Dec 6, 2005·22 cites·23 claims
- 1274US7184317B2Method for programming multi-bit charge-trapping memory cell arraysINFINEON TECHNOLOGIES AG·Filed 2005·Granted Feb 27, 2007·9 cites·20 claims
- 1370US7355898B2Integrated circuit and method for reading from resistance memory cellsINFINEON TECHNOLOGIES AG·Filed 2005·Granted Apr 8, 2008·7 cites·29 claims
- 1470US6500677B2Method for fabricating a ferroelectric memory configurationINFINEON TECHNOLOGIES AG·Filed 2001·Granted Dec 31, 2002·13 cites·20 claims
- 1568US7187602B2Reducing memory failures in integrated circuitsINFINEON TECHNOLOGIES AG·Filed 2003·Granted Mar 6, 2007·16 cites·22 claims
- 1668US7092304B2Semiconductor memoryINFINEON TECHNOLOGIES AG·Filed 2004·Granted Aug 15, 2006·15 cites·20 claims
- 1767US7737428B2Memory component with memory cells having changeable resistance and fabrication method thereforQIMONDA AG·Filed 2005·Granted Jun 15, 2010·9 cites·21 claims
- 1864US6639824B1Memory architectureINFINEON TECHNOLOGIES AG·Filed 2002·Granted Oct 28, 2003·13 cites·28 claims
- 1962US6972983B2Increasing the read signal in ferroelectric memoriesINFINEON TECHNOLOGIES AG·Filed 2002·Granted Dec 6, 2005·12 cites·32 claims
- 2062US6826099B22T2C signal margin test mode using a defined charge and discharge of BL and /BLINFINEON TECHNOLOGIES AG·Filed 2002·Granted Nov 30, 2004·12 cites·11 claims
- 2160US6791871B2MRAM configurationINFINEON TECHNOLOGIES AG·Filed 2003·Granted Sep 14, 2004·11 cites·6 claims
- 2259US6724026B2Memory architecture with memory cell groupsINFINEON TECHNOLOGIES AG·Filed 2002·Granted Apr 20, 2004·12 cites·13 claims
- 2359US6707736B2Semiconductor memory deviceTOSHIBA KK·Filed 2002·Granted Mar 16, 2004·10 cites·18 claims
- 2459US6584009B1Memory integrated circuit with improved reliabilityINFINEON TECHNOLOGIES AG·Filed 2002·Granted Jun 24, 2003·10 cites·15 claims
- 2557US7414257B2Switching device for configurable interconnect and method for preparing the sameINFINEON TECHNOLOGIES AG·Filed 2004·Granted Aug 19, 2008·7 cites·24 claims
- 2653US6920059B2Reducing effects of noise coupling in integrated circuits with memory arraysTOSHIBA KK·Filed 2002·Granted Jul 19, 2005·7 cites·43 claims
- 2751US6731554B12T2C signal margin test mode using resistive elementINFINEON TECHNOLOGIES AG·Filed 2002·Granted May 4, 2004·7 cites·16 claims
- 2850US6501686B2Electronic driver circuit for word lines in a memory matrix, and memory apparatusINFINEON TECHNOLOGIES AG·Filed 2001·Granted Dec 31, 2002·6 cites·19 claims
- 2948US7715226B2Memory device including electrical circuit configured to provide reversible bias across the PMC memory cell to perform erase and write functionsQIMONDA AG·Filed 2008·Granted May 11, 2010·1 cites·16 claims
- 3047US6687171B2Flexible redundancy for memoriesINFINEON TECHNOLOGIES AG·Filed 2002·Granted Feb 3, 2004·5 cites·11 claims
- 3145US6856560B2Redundancy in series grouped memory architectureINFINEON TECHNOLOGIES AG·Filed 2002·Granted Feb 15, 2005·4 cites·25 claims
- 3244US7127598B2Semiconductor device comprising transition detecting circuit and method of activating the sameINFINEON TECHNOLOGIES AG·Filed 2002·Granted Oct 24, 2006·0 cites·10 claims
- 3344US6885597B2Sensing test circuitTOSHIBA KK·Filed 2002·Granted Apr 26, 2005·4 cites·39 claims
- 3443US2005050261A1High density flash memory with high speed cache data interfaceFiled 2003·Application pending·0 cites
- 3542US6906969B2Hybrid fuses for redundancyTOSHIBA KK·Filed 2002·Granted Jun 14, 2005·3 cites·43 claims
- 3640US6950328B2Imprint suppression circuit schemeINFINEON TECHNOLOGIES AG·Filed 2003·Granted Sep 27, 2005·2 cites·4 claims
- 3740US6903959B2Sensing of memory integrated circuitsINFINEON TECHNOLOGIES AG·Filed 2002·Granted Jun 7, 2005·2 cites·22 claims
- 3838US11495273B2Write circuit, non-volatile data storage, method for writing to a plurality of memory cells and method for operating a non-volatile data memoryINFINEON TECHNOLOGIES AG·Filed 2021·Granted Nov 8, 2022·0 cites·13 claims
- 3937US6775182B2Integrated magnetoresistive semiconductor memory configurationINFINEON TECHNOLOGIES AG·Filed 2003·Granted Aug 10, 2004·1 cites·8 claims
- 4032US2005063213A1Signal margin test mode for FeRAM with ferroelectric reference capacitorFiled 2003·Application pending·0 cites
- 4132US2004095799A12T2C signal margin test mode using different pre-charge levels for BL and/BLFiled 2002·Application pending·0 cites
- 4232US2004095798A1Ferroelectric memory architectureFiled 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →