Inventor · disambiguated record
Thomas W. Sigmon
Also filed as: SIGMON THOMAS W
11 granted patents·672 citations·filing 1978–2004
93Inventor score
Top patents by PatentIndex Score
11 records- 0193US5817550AMethod for formation of thin film transistors on plastic substratesUNIV CALIFORNIA·Filed 1996·Granted Oct 6, 1998·155 cites·16 claims
- 0293US5456763ASolar cells utilizing pulsed-energy crystallized microcrystalline/polycrystalline siliconUNIV CALIFORNIA·Filed 1994·Granted Oct 10, 1995·129 cites·19 claims
- 0391US5346850ACrystallization and doping of amorphous silicon on low temperature plasticUNIV CALIFORNIA·Filed 1992·Granted Sep 13, 1994·154 cites·24 claims
- 0490US4177084AMethod for producing a low defect layer of silicon-on-sapphire waferHEWLETT PACKARD CO·Filed 1978·Granted Dec 4, 1979·69 cites·6 claims
- 0582US5425860APulsed energy synthesis and doping of silicon carbideUNIV CALIFORNIA·Filed 1993·Granted Jun 20, 1995·47 cites·22 claims
- 0676US6680485B1Thin film transistors on plastic substratesUNIV CALIFORNIA·Filed 1998·Granted Jan 20, 2004·45 cites·13 claims
- 0764US5316969AMethod of shallow junction formation in semiconductor devices using gas immersion laser dopingUNIV LELAND STANFORD JUNIOR·Filed 1992·Granted May 31, 1994·35 cites·19 claims
- 0863US6541316B2Process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junctionUNIV CALIFORNIA·Filed 2000·Granted Apr 1, 2003·9 cites·17 claims
- 0958US6933530B2Process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junctionUNIV CALIFORNIA·Filed 2004·Granted Aug 23, 2005·6 cites·12 claims
- 1055US5565377AProcess for forming retrograde profiles in siliconUNIV CALIFORNIA·Filed 1994·Granted Oct 15, 1996·23 cites·20 claims
- 1137US6828180B2Process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junctionUNIV CALIFORNIA·Filed 2002·Granted Dec 7, 2004·0 cites·3 claims
Join the waitlist — get patent alerts
Get an alert when Thomas W. Sigmon files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →