Inventor · disambiguated record
Ting Cheong Ang
Also filed as: ANG TING C · ANG TING CHEONG
49 granted patents·5 pending applications·1,416 citations·filing 1999–2012
99Inventor score
Files withCHARTERED SEMICONDUCTOR MFG38SEMICONDUCTOR MFG INT SHANGHAI8ANG TING CHEONG4CHARTERED SEMINCONDUCTOR MFG L1DENSELIGHT SEMICONDUCTOR PTE L1
Top patents by PatentIndex Score
54 records- 0198US6492726B1Chip scale packaging with multi-layer flip chip arrangement and ball grid array interconnectionCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Dec 10, 2002·267 cites·28 claims
- 0293US6406975B1Method for fabricating an air gap shallow trench isolation (STI) structureCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Jun 18, 2002·84 cites·18 claims
- 0393US6380106B1Method for fabricating an air gap metallization scheme that reduces inter-metal capacitance of interconnect structuresCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Apr 30, 2002·84 cites·11 claims
- 0493US6261917B1High-K MOM capacitorCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Jul 17, 2001·78 cites·30 claims
- 0591US6406994B1Triple-layered low dielectric constant dielectric dual damascene approachCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Jun 18, 2002·31 cites·20 claims
- 0690US6252290B1Method to form, and structure of, a dual damascene interconnect deviceCHARTERED SEMICONDUCTOR MFG·Filed 1999·Granted Jun 26, 2001·123 cites·19 claims
- 0789US6611024B2Method of forming PID protection diode for SOI waferCHARTERED SEMICONDUCTOR MFG·Filed 2001·Granted Aug 26, 2003·44 cites·8 claims
- 0887US7456067B2Method with high gapfill capability for semiconductor devicesSEMICONDUCTOR MFG INT SHANGHAI·Filed 2006·Granted Nov 25, 2008·12 cites·16 claims
- 0987US6303414B1Method of forming PID protection diode for SOI waferCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Oct 16, 2001·42 cites·11 claims
- 1087US6275089B1Low voltage controllable transient trigger network for ESD protectionCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Aug 14, 2001·45 cites·10 claims
- 1187US6110787AMethod for fabricating a MOS deviceCHARTERED SEMICONDUCTOR MFG·Filed 1999·Granted Aug 29, 2000·99 cites·24 claims
- 1286US6649517B2Copper metal structure for the reduction of intra-metal capacitanceCHARTERED SEMICONDUCTOR MFG·Filed 2001·Granted Nov 18, 2003·31 cites·26 claims
- 1384US6406948B1Method for forming an ESD protection network for SOI technology with the ESD device formed in an underlying silicon substrateCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Jun 18, 2002·33 cites·18 claims
- 1480US6376379B1Method of hard mask patterningCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Apr 23, 2002·25 cites·26 claims
- 1577US6177324B1ESD protection device for STI deep submicron technologyCHARTERED SEMICONDUCTOR MFG·Filed 1999·Granted Jan 23, 2001·42 cites·24 claims
- 1676US6787422B2Method of body contact for SOI mosfetCHARTERED SEMICONDUCTOR MFG·Filed 2001·Granted Sep 7, 2004·20 cites·9 claims
- 1775US6416909B1Alternating phase shift mask and method for fabricating the alignment monitorCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Jul 9, 2002·16 cites·25 claims
- 1874US6090691AMethod for forming a raised source and drain without using selective epitaxial growthCHARTERED SEMICONDUCTOR MFG·Filed 1999·Granted Jul 18, 2000·46 cites·30 claims
- 1973US8026151B2Method with high gapfill capability for semiconductor devicesSEMICONDUCTOR MFG INT SHANGHAI·Filed 2008·Granted Sep 27, 2011·4 cites·12 claims
- 2073US7579271B2Method for forming low dielectric constant fluorine-doped layersSEMICONDUCTOR MFG INT SHANGHAI·Filed 2006·Granted Aug 25, 2009·3 cites·11 claims
- 2173US6815823B2Copper metal structure for the reduction of intra-metal capacitanceCHARTERED SEMICONDUCTOR MFG·Filed 2003·Granted Nov 9, 2004·13 cites·5 claims
- 2273US6582856B1Simplified method of fabricating a rim phase shift maskCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Jun 24, 2003·13 cites·19 claims
- 2371US7989309B2Method of improving a shallow trench isolation gapfill processSEMICONDUCTOR MFG INT SHANGHAI·Filed 2006·Granted Aug 2, 2011·4 cites·13 claims
- 2470US6376319B2Process to fabricate a source-drain extensionCHARTERED SEMICONDUCTOR MFG·Filed 2001·Granted Apr 23, 2002·13 cites·9 claims
- 2569US6963113B2Method of body contact for SOI MOSFETCHARTERED SEMICONDUCTOR MFG·Filed 2004·Granted Nov 8, 2005·13 cites·14 claims
- 2667US8187950B2Method of eliminating micro-trenches during spacer etchANG TING CHEONG·Filed 2008·Granted May 29, 2012·3 cites·16 claims
- 2767US6465296B1Vertical source/drain contact semiconductorCHARTERED SEMICONDUCTOR MFG·Filed 2002·Granted Oct 15, 2002·14 cites·16 claims
- 2866US6653674B2Vertical source/drain contact semiconductorCHARTERED SEMICONDUCTOR MFG·Filed 2002·Granted Nov 25, 2003·11 cites·24 claims
- 2963US6492242B1Method of forming of high K metallic dielectric layerCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Dec 10, 2002·8 cites·14 claims
- 3063US6248618B1Method of fabrication of dual gate oxides for CMOS devicesCHARTERED SEMICONDUCTOR MFG·Filed 1999·Granted Jun 19, 2001·22 cites·22 claims
- 3162US6486515B2ESD protection network used for SOI technologyCHARTERED SEMICONDUCTOR MFG·Filed 2002·Granted Nov 26, 2002·9 cites·6 claims
- 3261US6833606B2Fabrication of a heterojunction bipolar transistor with integrated MIM capacitorDENSELIGHT SEMICONDUCTOR PTE L·Filed 2002·Granted Dec 21, 2004·11 cites·19 claims
- 3360US6764914B2Method of forming a high K metallic dielectric layerCHARTERED SEMICONDUCTOR MFG·Filed 2002·Granted Jul 20, 2004·6 cites·8 claims
- 3460US6319783B1Process to fabricate a novel source-drain extensionCHARTERED SEMICONDUCTOR MFG·Filed 1999·Granted Nov 20, 2001·16 cites·10 claims
- 3560US6214680B1Method to fabricate a sub-quarter-micron MOSFET with lightly doped source/drain regionsCHARTERED SEMICONDUCTOR MFG·Filed 1999·Granted Apr 10, 2001·22 cites·29 claims
- 3658US7910475B2Method for forming low dielectric constant fluorine-doped layersSEMICONDUCTOR MFG INT SHANGHAI·Filed 2009·Granted Mar 22, 2011·0 cites·9 claims
- 3758US6284609B1Method to fabricate a MOSFET using selective epitaxial growth to form lightly doped source/drain regionsCHARTERED SEMICONDUCTOR MFG·Filed 1999·Granted Sep 4, 2001·22 cites·27 claims
- 3856US6300172B1Method of field isolation in silicon-on-insulator technologyCHARTERED SEMICONDUCTOR MFG·Filed 1999·Granted Oct 9, 2001·22 cites·27 claims
- 3953US6258677B1Method of fabricating wedge isolation transistorsCHARTERED SEMINCONDUCTOR MFG L·Filed 1999·Granted Jul 10, 2001·22 cites·19 claims
- 4051US9029978B2Semiconductor trench structure having a silicon nitride layer overlaying an oxide layerANG TING CHEONG·Filed 2012·Granted May 12, 2015·0 cites·15 claims
- 4151US6455384B2Method for forming MOSFET device having source/drain extension regions located underlying L shaped spacersCHARTERED SEMICONDUCTOR MFG·Filed 2001·Granted Sep 24, 2002·4 cites·7 claims
- 4250US6803314B2Double-layered low dielectric constant dielectric dual damascene methodCHARTERED SEMICONDUCTOR MFG·Filed 2001·Granted Oct 12, 2004·5 cites·10 claims
- 4349US6143598AMethod of fabrication of low leakage capacitorCHARTERED SEMICONDUCTOR MFG·Filed 1999·Granted Nov 7, 2000·15 cites·16 claims
- 4447US6399431B1ESD protection device for SOI technologyCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Jun 4, 2002·3 cites·18 claims
- 4547US2011198734A1Method of improving a shallow trench isolation gapfill processSEMICONDUCTOR MFG INT SHANGHAI·Filed 2011·Application pending·0 cites
- 4643US2007161203A1Method with high gapfill capability and resulting device structureSEMICONDUCTOR MFG INT SHANGHAI·Filed 2005·Application pending·0 cites
- 4742US8110502B2Method of improving adhesion strength of low dielectric constant layersANG TING CHEONG·Filed 2006·Granted Feb 7, 2012·0 cites·17 claims
- 4841US8309456B2Method and system for metal barrier and seed integrationANG TING CHEONG·Filed 2005·Granted Nov 13, 2012·0 cites·19 claims
- 4938US6737739B2Method of vacuum packaging a semiconductor device assemblyCHARTERED SEMICONDUCTOR MFG·Filed 2002·Granted May 18, 2004·0 cites·16 claims
- 5038US6329253B1Thick oxide MOS device used in ESD protection circuitCHARTERED SEMICONDUCTOR MFG·Filed 1999·Granted Dec 11, 2001·9 cites·26 claims
Showing the top 50 of 54 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →