Inventor · disambiguated record
Ting-Fu Chang
Also filed as: CHANG TING-FU
12 granted patents·7 pending applications·10 citations·filing 2012–2025
84Inventor score
Top patents by PatentIndex Score
19 records- 0196US11824109B2Integration of p-channel and n-channel E-FET III-V devices with optimization of device performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 21, 2023·2 cites·20 claims
- 0285US11522077B2Integration of p-channel and n-channel E-FET III-V devices with optimization of device performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 6, 2022·1 cites·20 claims
- 0381US12272741B2Integration of p-channel and n-channel E-FET III-V devices with optimization of device performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 8, 2025·0 cites·20 claims
- 0481US2025240996A1Integration of p-channel and n-channel e-fet iii-v devices with optimization of device performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0576US9412807B1Semiconductor structureNAT UNIV TSING HUA·Filed 2015·Granted Aug 9, 2016·4 cites·12 claims
- 0676US2025323218A13d semiconductor structure for wide-bandgap semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0771US9502602B2Structure of high electron mobility light emitting transistorNAT UNIV TSING HUA·Filed 2014·Granted Nov 22, 2016·2 cites·20 claims
- 0869US11843047B2Integration of p-channel and n-channel E-FET III-V devices without parasitic channelsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 12, 2023·0 cites·20 claims
- 0967US2024014176A13d semiconductor structure for wide-bandgap semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1061US11349023B2Integration of p-channel and n-channel E-FET III-V devices without parasitic channelsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 31, 2022·0 cites·20 claims
- 1156US9105757B2Junction barrier Schottky diode and manufacturing method thereofHUANG CHIH-FANG·Filed 2013·Granted Aug 11, 2015·1 cites·4 claims
- 1250US9252219B2Insulated gate bipolar transistor with a lateral gate structure and gallium nitride substrateHUANG CHIH-FANG·Filed 2014·Granted Feb 2, 2016·0 cites·4 claims
- 1348US9362381B2Insulated gate bipolar transistor with a lateral gate structure and gallium nitride substrate and manufacturing method thereofHUANG CHIH-FANG·Filed 2015·Granted Jun 7, 2016·0 cites·4 claims
- 1448US8710551B2High electron mobility transistor and manufacturing method thereofHUANG CHIH-FANG·Filed 2012·Granted Apr 29, 2014·0 cites·5 claims
- 1547US2014187003A1High Electron Mobility Transistor and Manufacturing Method ThereofHUANG CHIH-FANG·Filed 2014·Application pending·0 cites
- 1637US8981429B2High electron mobility transistor and manufacturing method thereofHUANG CHIH-FANG·Filed 2013·Granted Mar 17, 2015·0 cites·10 claims
- 1737US2013270571A1Schottky barrier diode and manufacturing method thereofHUANG CHIH-FANG·Filed 2012·Application pending·0 cites
- 1835US2015279961A1METHOD OF MANUFACTURING HIGH POWER VERTICAL GaN-PIN DIODENAT UNIV TSING HUA·Filed 2014·Application pending·0 cites
- 1928US2017207085A1Horizontal semiconductor deviceNAT UNIV TSING HUA·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →