Inventor · disambiguated record
Ting Chang
Also filed as: CHANG TING · CHANG TING CHEN · CHANG TING-CHUNG
20 granted patents·5 pending applications·53 citations·filing 2000–2025
92Inventor score
Top patents by PatentIndex Score
25 records- 0196US11094782B1Gate-all-around integrated circuit structures having depopulated channel structuresINTEL CORP·Filed 2020·Granted Aug 17, 2021·8 cites·25 claims
- 0293US10312367B2Monolithic integration of high voltage transistors and low voltage non-planar transistorsINTEL CORP·Filed 2014·Granted Jun 4, 2019·12 cites·10 claims
- 0388US11437483B2Gate-all-around integrated circuit structures having dual nanoribbon channel structuresINTEL CORP·Filed 2020·Granted Sep 6, 2022·2 cites·25 claims
- 0487US9929090B2Antifuse element using spacer breakdownINTEL CORP·Filed 2014·Granted Mar 27, 2018·7 cites·25 claims
- 0579US12349411B2Gate-all-around integrated circuit structures having dual nanoribbon channel structuresINTEL CORP·Filed 2023·Granted Jul 1, 2025·0 cites·20 claims
- 0678US10192969B2Transistor gate metal with laterally graduated work functionINTEL CORP·Filed 2014·Granted Jan 29, 2019·4 cites·11 claims
- 0776US12369358B2Co-integrated high performance nanoribbon transistors with high voltage thick gate finFET devicesINTEL CORP·Filed 2019·Granted Jul 22, 2025·2 cites·18 claims
- 0875US12453145B2Single gated 3D nanowire inverter for high density thick gate SoC applicationsINTEL CORP·Filed 2023·Granted Oct 21, 2025·0 cites·20 claims
- 0975US11862703B2Gate-all-around integrated circuit structures having dual nanoribbon channel structuresINTEL CORP·Filed 2022·Granted Jan 2, 2024·0 cites·20 claims
- 1073US12249622B2Nanoribbon thick gate devices with differential ribbon spacing and width for SOC applicationsINTEL CORP·Filed 2019·Granted Mar 11, 2025·1 cites·18 claims
- 1170US10847456B2Antifuse element using spacer breakdownINTEL CORP·Filed 2018·Granted Nov 24, 2020·1 cites·20 claims
- 1270US6810500B1Method for mapping a two-dimensional data array in a memoryACER LABS INC·Filed 2000·Granted Oct 26, 2004·16 cites·10 claims
- 1368US2025185317A1Nanoribbon thick gate devices with differential ribbon spacing and width for soc applicationsINTEL CORP·Filed 2025·Application pending·0 cites
- 1467US11581404B2Gate-all-around integrated circuit structures having depopulated channel structuresINTEL CORP·Filed 2021·Granted Feb 14, 2023·0 cites·24 claims
- 1561US11791380B2Single gated 3D nanowire inverter for high density thick gate SOC applicationsINTEL CORP·Filed 2019·Granted Oct 17, 2023·0 cites·24 claims
- 1655US2019097057A1Non-linear fin-based devicesINTEL CORP·Filed 2018·Application pending·0 cites
- 1752US10164115B2Non-linear fin-based devicesINTEL CORP·Filed 2014·Granted Dec 25, 2018·0 cites·22 claims
- 1850US11996403B2ESD diode solution for nanoribbon architecturesINTEL CORP·Filed 2019·Granted May 28, 2024·0 cites·11 claims
- 1949US12040395B2High voltage extended-drain MOS (EDMOS) nanowire transistorsINTEL CORP·Filed 2019·Granted Jul 16, 2024·0 cites·21 claims
- 2048US12089411B2Self-aligned front-end charge trap flash memory cell and capacitor design for integrated high-density scaled devicesINTEL CORP·Filed 2020·Granted Sep 10, 2024·0 cites·14 claims
- 2148US10763209B2MOS antifuse with void-accelerated breakdownINTEL CORP·Filed 2014·Granted Sep 1, 2020·0 cites·21 claims
- 2244US2021184045A1High voltage ultra-low power thick gate nanoribbon transistors for soc applicationsINTEL CORP·Filed 2019·Application pending·0 cites
- 2343US2021193844A1Strain based performance enhancement using selective metal oxidation inside gateINTEL CORP·Filed 2019·Application pending·0 cites
- 2439US9799668B2Memory cell having isolated charge sites and method of fabricating sameINTEL CORP·Filed 2013·Granted Oct 24, 2017·0 cites·20 claims
- 2526US2002177362A1Portable memory storage-retrieval deviceFiled 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →