Inventor · disambiguated record
Ting-Huang Kuo
Also filed as: Kuo Ting-Huang
10 granted patents·1 pending application·4 citations·filing 2016–2024
81Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD11
Top patents by PatentIndex Score
11 records- 0184US2024297079A1Semiconductor device having planar transistor and finfetTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0279US11309423B2Fin field effect transistor (finFET) device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 19, 2022·2 cites·20 claims
- 0378US12009262B2Semiconductor device having planar transistor and FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 11, 2024·0 cites·20 claims
- 0478US10276720B2Method for forming fin field effect transistor (FINFET) device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 30, 2019·2 cites·20 claims
- 0572US11328958B2Semiconductor device having planar transistor and FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 10, 2022·0 cites·20 claims
- 0671US11949014B2Fin field effect transistor (FinFet) device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 2, 2024·0 cites·20 claims
- 0766US10818555B2Semiconductor device having planar transistor and FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 27, 2020·0 cites·20 claims
- 0861US10957695B2Asymmetric gate pitchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 23, 2021·0 cites·20 claims
- 0959US10483167B2Method for manufacturing dual FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 19, 2019·0 cites·20 claims
- 1052US10475790B2Asymmetric gate pitchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 12, 2019·0 cites·20 claims
- 1140US9859129B2Semiconductor device and manufacturing method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 2, 2018·0 cites·14 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →