Inventor · disambiguated record
Tingkai Li
Also filed as: LI TINGKAI
97 granted patents·26 pending applications·2,128 citations·filing 1990–2018
99Inventor score
Files withSHARP LAB OF AMERICA INC107HANGZHOU ERRAN TECH CO LTD2CENTER OF INNOVATIVE TECHNOLOG1CERAM INC1EMCORE CORP1
Top patents by PatentIndex Score
123 records- 0198US7968419B2Back-to-back metal/semiconductor/metal (MSM) Schottky diodeSHARP LAB OF AMERICA INC·Filed 2008·Granted Jun 28, 2011·111 cites·10 claims
- 0298US7633108B2Metal/semiconductor/metal current limiterSHARP LAB OF AMERICA INC·Filed 2007·Granted Dec 15, 2009·57 cites·7 claims
- 0398US7598108B2Gallium nitride-on-silicon interface using multiple aluminum compound buffer layersSHARP LAB OF AMERICA INC·Filed 2007·Granted Oct 6, 2009·92 cites·16 claims
- 0498US6849891B1RRAM memory cell electrodesSHARP LAB OF AMERICA INC·Filed 2003·Granted Feb 1, 2005·250 cites·14 claims
- 0597US7446010B2Metal/semiconductor/metal (MSM) back-to-back Schottky diodeSHARP LAB OF AMERICA INC·Filed 2006·Granted Nov 4, 2008·57 cites·15 claims
- 0697US7407858B2Resistance random access memory devices and method of fabricationSHARP LAB OF AMERICA INC·Filed 2006·Granted Aug 5, 2008·62 cites·12 claims
- 0797US7271081B2Metal/ZnOx/metal current limiterSHARP LAB OF AMERICA INC·Filed 2005·Granted Sep 18, 2007·39 cites·17 claims
- 0897US7029924B2Buffered-layer memory cellSHARP LAB OF AMERICA INC·Filed 2004·Granted Apr 18, 2006·129 cites·12 claims
- 0996US7303971B2MSM binary switch memory deviceSHARP LAB OF AMERICA INC·Filed 2005·Granted Dec 4, 2007·31 cites·22 claims
- 1095US7608514B2MSM binary switch memorySHARP LAB OF AMERICA INC·Filed 2007·Granted Oct 27, 2009·24 cites·11 claims
- 1195US7060586B2PCMO thin film with resistance random access memory (RRAM) characteristicsSHARP LAB OF AMERICA INC·Filed 2004·Granted Jun 13, 2006·78 cites·6 claims
- 1294US7256429B2Memory cell with buffered-layerSHARP LAB OF AMERICA INC·Filed 2005·Granted Aug 14, 2007·34 cites·15 claims
- 1393US7378286B2Semiconductive metal oxide thin film ferroelectric memory transistorSHARP LAB OF AMERICA INC·Filed 2004·Granted May 27, 2008·70 cites·13 claims
- 1493US6531324B2MFOS memory transistor & method of fabricating sameSHARP LAB OF AMERICA INC·Filed 2001·Granted Mar 11, 2003·62 cites·16 claims
- 1592US7259055B2Method of forming high-luminescence silicon electroluminescence deviceSHARP LAB OF AMERICA INC·Filed 2005·Granted Aug 21, 2007·18 cites·25 claims
- 1692US7098496B2Ferroelectric transistor gate stack with resistance-modified conductive oxideSHARP LAB OF AMERICA INC·Filed 2005·Granted Aug 29, 2006·20 cites·11 claims
- 1792US6457479B1Method of metal oxide thin film cleaningSHARP LAB OF AMERICA INC·Filed 2001·Granted Oct 1, 2002·57 cites·1 claims
- 1892US6048740AFerroelectric nonvolatile transistor and method of making sameSHARP LAB OF AMERICA INC·Filed 1998·Granted Apr 11, 2000·92 cites·14 claims
- 1990US7358160B2Method of selective formation of compound semiconductor-on-silicon wafer with silicon nanowire buffer layerSHARP LAB OF AMERICA INC·Filed 2006·Granted Apr 15, 2008·13 cites·12 claims
- 2089US7297642B2Sputter-deposited rare earth element-doped silicon oxide film with silicon nanocrystals for electroluminescence applicationsSHARP LAB OF AMERICA INC·Filed 2006·Granted Nov 20, 2007·12 cites·17 claims
- 2188US9385278B2Semiconductor growth substrates and associated systems and methods for die singulationMICRON TECHNOLOGY INC·Filed 2015·Granted Jul 5, 2016·5 cites·20 claims
- 2288US6281022B1Multi-phase lead germanate film deposition methodSHARP LAB OF AMERICA INC·Filed 2000·Granted Aug 28, 2001·43 cites·16 claims
- 2388US5527567AMetalorganic chemical vapor deposition of layered structure oxidesCERAM INC·Filed 1995·Granted Jun 18, 1996·97 cites·37 claims
- 2487US7544625B2Silicon oxide thin-films with embedded nanocrystalline siliconSHARP LAB OF AMERICA INC·Filed 2006·Granted Jun 9, 2009·11 cites·34 claims
- 2587US7112837B2MFIS ferroelectric memory arraySHARP LAB OF AMERICA INC·Filed 2005·Granted Sep 26, 2006·10 cites·5 claims
- 2687US6534326B1Method of minimizing leakage current and improving breakdown voltage of polycrystalline memory thin filmsSHARP LAB OF AMERICA INC·Filed 2002·Granted Mar 18, 2003·38 cites·16 claims
- 2786US7098101B1Method of forming PrxCa1−xMnO3 thin films having a PrMnO3/CaMnO3 super lattice structure using metalorganic chemical vapor depositionSHARP LAB OF AMERICA INC·Filed 2005·Granted Aug 29, 2006·14 cites·18 claims
- 2885US6939724B2Method for obtaining reversible resistance switches on a PCMO thin film when integrated with a highly crystallized seed layerSHARP LAB OF AMERICA INC·Filed 2003·Granted Sep 6, 2005·32 cites·10 claims
- 2984US7625595B2Method of monitoring PCMO precursor synthesisSHARP LAB OF AMERICA INC·Filed 2006·Granted Dec 1, 2009·9 cites·5 claims
- 3084US5102836ACeramic materials with low thermal conductivity and low coefficients of thermal expansionINNOVATIVE TECH CENTER·Filed 1990·Granted Apr 7, 1992·41 cites·22 claims
- 3183US8951842B2Semiconductor growth substrates and associated systems and methods for die singulationFANG XIAOLONG·Filed 2012·Granted Feb 10, 2015·6 cites·15 claims
- 3281US7338907B2Selective etching processes of silicon nitride and indium oxide thin films for FeRAM device applicationsSHARP LAB OF AMERICA INC·Filed 2004·Granted Mar 4, 2008·32 cites·30 claims
- 3381US6080241AChemical vapor deposition chamber having an adjustable flow flangeEMCORE CORP·Filed 1998·Granted Jun 27, 2000·65 cites·33 claims
- 3478US6664116B2Seed layer processes for MOCVD of ferroelectric thin films on high-k gate oxidesSHARP LAB OF AMERICA INC·Filed 2001·Granted Dec 16, 2003·15 cites·19 claims
- 3578US6531325B1Memory transistor and method of fabricating sameSHARP LAB OF AMERICA INC·Filed 2002·Granted Mar 11, 2003·18 cites·12 claims
- 3677US7256426B2Rare earth element-doped silicon/silicon dioxide lattice structureSHARP LAB OF AMERICA INC·Filed 2005·Granted Aug 14, 2007·5 cites·33 claims
- 3776US6972239B1Low temperature MOCVD processes for fabrication of PrXCa1-xMnO3 thin filmsSHARP LAB OF AMERICA INC·Filed 2004·Granted Dec 6, 2005·13 cites·10 claims
- 3876US6303502B1MOCVD metal oxide for one transistor memorySHARP LAB OF AMERICA INC·Filed 2000·Granted Oct 16, 2001·21 cites·7 claims
- 3973US7193280B2Indium oxide conductive film structuresSHARP LAB OF AMERICA INC·Filed 2005·Granted Mar 20, 2007·3 cites·16 claims
- 4073US6649957B2Thin film polycrystalline memory structureSHARP LAB OF AMERICA INC·Filed 2003·Granted Nov 18, 2003·16 cites·13 claims
- 4172US7723729B2Compound semiconductor-on-silicon wafer with a silicon nanowire buffer layerSHARP LAB OF AMERICA INC·Filed 2008·Granted May 25, 2010·3 cites·9 claims
- 4272US7585788B2Rare earth element-doped oxide precursor with silicon nanocrystalsSHARP LAB OF AMERICA INC·Filed 2005·Granted Sep 8, 2009·3 cites·11 claims
- 4372US7514282B2Patterned silicon submicron tubesSHARP LAB OF AMERICA INC·Filed 2007·Granted Apr 7, 2009·3 cites·17 claims
- 4472US6475813B1MOCVD and annealing processes for C-axis oriented ferroelectric thin filmsSHARP LAB OF AMERICA INC·Filed 2001·Granted Nov 5, 2002·15 cites·22 claims
- 4572US6462366B1Ferroelectric nonvolatile transistorSHARP LAB OF AMERICA INC·Filed 2000·Granted Oct 8, 2002·15 cites·7 claims
- 4672US6440752B1Electrode materials with improved hydrogen degradation resistance and fabrication methodSHARP LAB OF AMERICA INC·Filed 2001·Granted Aug 27, 2002·12 cites·7 claims
- 4770US7008833B2In2O3thin film resistivity control by doping metal oxide insulator for MFMox device applicationsSHARP LAB OF AMERICA INC·Filed 2004·Granted Mar 7, 2006·12 cites·18 claims
- 4869US6995025B2Asymmetrical programming ferroelectric memory transistorSHARP LAB OF AMERICA INC·Filed 2004·Granted Feb 7, 2006·13 cites·6 claims
- 4969US6503314B1MOCVD ferroelectric and dielectric thin films depositions using mixed solventsSHARP LAB OF AMERICA INC·Filed 2000·Granted Jan 7, 2003·9 cites·11 claims
- 5068US11426488B2Bioactive micro-nano pore gradient oxide ceramic filmHANGZHOU ERRAN TECH CO LTD·Filed 2018·Granted Aug 30, 2022·1 cites·13 claims
Showing the top 50 of 123 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →