Inventor · disambiguated record

Tien-Lu Lin

Also filed as: LIN TIEN-LU

101 granted patents·12 pending applications·158 citations·filing 2002–2025

99Inventor score

Files withTAIWAN SEMICONDUCTOR MFG CO LTD106 TAIWAN SEMICONDUCTOR MFG4 POWERCHIP SEMICONDUCTOR MFG CORP1 TAIWAN SEMICONDUSTOR MFG CO LTD1 TAIWAY SEMICONDUCTOR MFG COMPANY LTD1

Top patents by PatentIndex Score

113 records

0196US12040273B2Semiconductor device with multi-layer dielectricTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 16, 2024·2 cites·20 claims
0295US11715761B2Semiconductor device with air gap on gate structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 1, 2023·2 cites·20 claims
0395US9390965B2Air-gap forming techniques for interconnect structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jul 12, 2016·12 cites·20 claims
0494US11842962B2Interconnect structure with air-gapsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 12, 2023·1 cites·20 claims
0593US10290580B2Hybrid copper structure for advance interconnect usageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 14, 2019·7 cites·20 claims
0692US11282920B2Semiconductor device with air gap on gate structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 22, 2022·6 cites·20 claims
0791US10276498B2Interconnect structure with air-gapsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 30, 2019·4 cites·20 claims
0891US10109519B2Method of semiconductor integrated circuit fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 23, 2018·7 cites·20 claims
0991US9716035B2Combination interconnect structure and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jul 25, 2017·11 cites·17 claims
1091US9607881B2Insulator void aspect ratio tuning by selective depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Mar 28, 2017·13 cites·20 claims
1191US2025359290A1Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1291US2025359224A1Source/Drain Metal Contact And Formation ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1389US9837354B2Hybrid copper structure for advance interconnect usageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 5, 2017·7 cites·20 claims
1488US10943829B2Slot contacts and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 9, 2021·3 cites·20 claims
1588US10177242B2Semiconductor arrangement and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 8, 2019·3 cites·20 claims
1688US9559134B2Deep trench spacing isolation for complementary metal-oxide-semiconductor (CMOS) image sensorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 31, 2017·8 cites·20 claims
1788US2024379408A1Source/drain isolation structure and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
1887US12389665B2Semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 12, 2025·0 cites·20 claims
1985US12432994B2Source/drain metal contact and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 30, 2025·0 cites·20 claims
2085US12382709B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 5, 2025·0 cites·20 claims
2185US12131942B2Source/drain isolation structure and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 29, 2024·0 cites·20 claims
2285US10867863B1Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·2 cites·20 claims
2385US9412652B2Air gap forming techniques based on anodic alumina for interconnect structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 9, 2016·3 cites·20 claims
2485US2025056862A1Method of fabricating semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2584US12463095B2Semiconductor structure with a laminated layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 4, 2025·0 cites·20 claims
2684US12266566B2Contact resistance between via and conductive lineTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 1, 2025·0 cites·20 claims
2784US2024379852A1Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2883US9698242B2Semiconductor arrangement and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 4, 2017·2 cites·20 claims
2983US9633897B2Air-gap forming techniques for interconnect structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 25, 2017·2 cites·20 claims
3083US2024347463A1Semiconductor Device with Multi-Layer Dielectric and Methods of Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3183US2025233018A1Contact resistance between via and conductive lineTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3282US12159922B2Method of fabricating semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 3, 2024·0 cites·20 claims
3382US12125912B2Semiconductor device structure and method for forming the same preliminary classTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 22, 2024·0 cites·20 claims
3482US10818597B2Hybrid copper structure for advance interconnect usageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 27, 2020·2 cites·20 claims
3582US9583383B2Air gap forming techniques based on anodic alumina for interconnect structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 28, 2017·2 cites·20 claims
3682US2024290661A1Slot contacts and method forming sameTAIWAN SEMICONDUSTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3781US11908744B2Semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 20, 2024·0 cites·20 claims
3881US9076790B1Air gap forming techniques based on anodic alumina for interconnect structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jul 7, 2015·3 cites·20 claims
3980US12183784B2Semiconductor device with air gap on gate structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 31, 2024·0 cites·20 claims
4080US12009265B2Slot contacts and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 11, 2024·0 cites·20 claims
4180US11694921B2Source/drain isolation structure and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 4, 2023·0 cites·20 claims
4280US10755964B1Source/drain isolation structure and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 25, 2020·1 cites·20 claims
4380US10700005B2Interconnect structure with air gapsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 30, 2020·1 cites·20 claims
4480US2024363757A1Methods of forming contact features in field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4579US12009254B2Contact resistance between via and conductive lineTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 11, 2024·0 cites·20 claims
4679US11637186B2Field effect transistor having gate contact and source/drain contact separated by a gapTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 25, 2023·2 cites·17 claims
4779US11335592B2Contact resistance between via and conductive lineTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 17, 2022·1 cites·20 claims
4879US9455178B2Method of semiconductor integrated circuit fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 27, 2016·4 cites·20 claims
4979US2024321746A1Butted contacts and methods of fabricating the same in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
5078US12464764B2Low parasitic capacitance contact structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 4, 2025·0 cites·20 claims

Showing the top 50 of 113 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →