Inventor · disambiguated record
Ting-Ya Lo
Also filed as: LO TING-YA
26 granted patents·30 pending applications·28 citations·filing 2020–2025
93Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD56
Top patents by PatentIndex Score
56 records- 0198US11538749B2Interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 27, 2022·7 cites·20 claims
- 0297US11810815B2Dielectric capping structure overlying a conductive structure to increase stabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 7, 2023·3 cites·20 claims
- 0397US11322395B2Dielectric capping structure overlying a conductive structure to increase stabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 3, 2022·4 cites·20 claims
- 0496US11854963B2Semiconductor interconnection structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·3 cites·20 claims
- 0596US11355430B2Capping layer overlying dielectric structure to increase reliabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 7, 2022·4 cites·20 claims
- 0694US12176246B2Dielectric capping structure overlying a conductive structure to increase stabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 24, 2024·1 cites·20 claims
- 0793US12068193B2Semiconductor device structure with interconnect structure having air gapTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 20, 2024·2 cites·20 claims
- 0892US12230537B2Semiconductor device structure having air gap and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 18, 2025·1 cites·20 claims
- 0990US11990400B2Capping layer overlying dielectric structure to increase reliabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 21, 2024·1 cites·20 claims
- 1087US2025336716A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1187US2025364400A1Semiconductor interconnection structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1286US12412780B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 9, 2025·0 cites·20 claims
- 1386US2025357195A1Semiconductor device having metallization layer with low capacitance and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1483US12431386B2Semiconductor device having metallization layer with low capacitance and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 30, 2025·0 cites·20 claims
- 1583US11658092B2Thermal interconnect structure for thermal management of electrical interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 23, 2023·1 cites·20 claims
- 1683US2025323095A1Semiconductor device structure having air gap and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1782US12463134B2Semiconductor interconnection structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 4, 2025·0 cites·20 claims
- 1882US11302798B2Semiconductor devices with air gate spacer and air gate capTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 12, 2022·1 cites·20 claims
- 1979US12033889B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 9, 2024·0 cites·20 claims
- 2079US2025357194A1Interconnect structure with high thermal conductivity and low parasitic capacitanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2179US2025046673A1Thermal interconnect structure for thermal management of electrical interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2278US12165945B2Thermal interconnect structure for thermal management of electrical interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 10, 2024·0 cites·20 claims
- 2378US2025357192A1Interconnect structure with low capacitance and high thermal conductivityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2478US2024347625A1Semiconductor devices with air gate spacer and air gate capTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2576US2025329606A1Integrated circuit device including a high thermal conductivity electrically insulating structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2675US2024371764A1Semiconductor interconnection structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2774US2024379416A1Semiconductor device having thermally conductive air gap structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2874US2024274524A1Capping layer overlying dielectric structure to increase reliabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2974US2024379413A1Interconnect structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3074US2024379435A1Semiconductor structure having self-aligned conductive structure and method for forming the semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3173US12027606B2Semiconductor devices with air gate spacer and air gate capTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 2, 2024·0 cites·20 claims
- 3273US11557511B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 17, 2023·0 cites·20 claims
- 3373US2024162084A1Semiconductor structure having air gaps and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3473US2025140605A1Interconnect structure with high thermal conductivity and low parasitic capacitanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3573US2024304541A1Barrier & air-gap scheme for high performance interconnectsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3672US2025125215A1Integrated circuit device including a high thermal conductivity electrically insulating structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3771US12062572B2Semiconductor device having metallization layer with low capacitance and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 13, 2024·0 cites·20 claims
- 3871US2025118595A1Interconnect structure with low capacitance and high thermal conductivityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3970US12381113B2Semiconductor device structure having air gap and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 5, 2025·0 cites·19 claims
- 4069US12094764B2Interconnect structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 17, 2024·0 cites·20 claims
- 4168US12002749B2Barrier and air-gap scheme for high performance interconnectsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 4, 2024·0 cites·20 claims
- 4266US11923243B2Semiconductor structure having air gaps and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 5, 2024·0 cites·20 claims
- 4365US2022359385A1Interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 4463US12482703B2Semiconductor device having thermally conductive air gap structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 25, 2025·0 cites·20 claims
- 4562US12068248B2Semiconductor interconnection structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 20, 2024·0 cites·20 claims
- 4659US2025210413A1Electronic device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4757US11848198B2Method for manufacturing semiconductor device having low-k carbon-containing dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 19, 2023·0 cites·20 claims
- 4857US2025132247A1Interconnection structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4957US2025118598A1Interconnection structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 5057US2025149436A1Interconnect structure with low rc delay and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
Showing the top 50 of 56 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Ting-Ya Lo files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →