Inventor · disambiguated record
Tim Minvielle
Also filed as: MINVIELLE TIM
47 granted patents·4 pending applications·304 citations·filing 1999–2019
98Inventor score
Top patents by PatentIndex Score
51 records- 0196US8466005B2Method for forming metal oxides and silicides in a memory devicePRAMANIK DIPANKAR·Filed 2011·Granted Jun 18, 2013·23 cites·20 claims
- 0295US9001554B2Resistive random access memory cell having three or more resistive statesINTERMOLECULAR INC·Filed 2013·Granted Apr 7, 2015·18 cites·19 claims
- 0395US8569104B2Transition metal oxide bilayersPHAM HIEU·Filed 2012·Granted Oct 29, 2013·27 cites·18 claims
- 0494US9178000B1Resistive random access memory cells having shared electrodes with transistor devicesINTERMOLECULAR INC·Filed 2014·Granted Nov 3, 2015·22 cites·18 claims
- 0594US8846484B2ReRAM stacks preparation by using single ALD or PVD chamberLEE ALBERT SANGHYUP·Filed 2012·Granted Sep 30, 2014·44 cites·18 claims
- 0692US8735217B2Multifunctional electrodeINTERMOLECULAR INC·Filed 2013·Granted May 27, 2014·4 cites·20 claims
- 0790US8817524B2Resistive random access memory cells having metal alloy current limiting layersINTERMOLECULAR INC·Filed 2012·Granted Aug 26, 2014·11 cites·20 claims
- 0889US8890109B2Resistive random access memory access cells having thermally isolating structuresINTERMOLECULAR INC·Filed 2012·Granted Nov 18, 2014·7 cites·20 claims
- 0986US6572989B2Thin film magnetic recording disk with a chromium-nickel pre-seed layerIBM·Filed 2001·Granted Jun 3, 2003·21 cites·33 claims
- 1085US10943952B2Threshold switch for memorySANDISK TECHNOLOGIES LLC·Filed 2019·Granted Mar 9, 2021·6 cites·18 claims
- 1185US8852996B2Carbon doped resistive switching layersINTERMOLECULAR INC·Filed 2012·Granted Oct 7, 2014·7 cites·18 claims
- 1285US8809159B2Radiation enhanced resistive switching layersINTERMOLECULAR INC·Filed 2012·Granted Aug 19, 2014·8 cites·19 claims
- 1384US8906736B1Multifunctional electrodeINTERMOLECULAR INC·Filed 2014·Granted Dec 9, 2014·1 cites·20 claims
- 1483US8853099B2Nonvolatile resistive memory element with a metal nitride containing switching layerWANG YUN·Filed 2011·Granted Oct 7, 2014·5 cites·6 claims
- 1582US9246096B2Atomic layer deposition of metal oxides for memory applicationsINTERMOLECULAR INC·Filed 2015·Granted Jan 26, 2016·3 cites·19 claims
- 1682US9054307B2Resistive random access memory cells having metal alloy current limiting layersINTERMOLECULAR INC·Filed 2014·Granted Jun 9, 2015·6 cites·20 claims
- 1778US8995166B2Multi-level memory array having resistive elements for multi-bit data storageINTERMOLECULAR INC·Filed 2012·Granted Mar 31, 2015·5 cites·18 claims
- 1877US6593009B2Magnetic thin film media with a pre-seed layer of CrTiHITACHI GLOBAL STORAGE TECH·Filed 2001·Granted Jul 15, 2003·11 cites·17 claims
- 1975US8980766B2Sequential atomic layer deposition of electrodes and resistive switching componentsINTERMOLECULAR INC·Filed 2014·Granted Mar 17, 2015·2 cites·16 claims
- 2075US8796103B2Forming nonvolatile memory elements by diffusing oxygen into electrodesINTERMOLECULAR INC·Filed 2012·Granted Aug 5, 2014·3 cites·18 claims
- 2173US8859328B2Multifunctional electrodeINTERMOLECULAR INC·Filed 2014·Granted Oct 14, 2014·0 cites·20 claims
- 2272US6586116B1Nonmetallic thin film magnetic recording disk with pre-seed layerHITACHI GLOBAL STORAGE TECH·Filed 2000·Granted Jul 1, 2003·11 cites·22 claims
- 2371US8860002B2Limited maximum fields of electrode-switching layer interfaces in Re-RAM cellsINTERMOLECULAR INC·Filed 2012·Granted Oct 14, 2014·2 cites·19 claims
- 2469US6670032B2Oriented magnetic medium on a nonmetallic substrateHITACHI GLOBAL STORAGE TECH·Filed 2001·Granted Dec 30, 2003·7 cites·9 claims
- 2569US6599642B2High anisotropy alloy for thin film diskHITACHI GLOBAL STORAGE TECH·Filed 2001·Granted Jul 29, 2003·9 cites·44 claims
- 2667US6852430B2Magnetic thin film media with a pre-seed layer of CrTiHITACHI GLOBAL STORAGE TECH·Filed 2002·Granted Feb 8, 2005·5 cites·9 claims
- 2767US6607842B2Containing an AITa or AITi pre-seed layer, a CoCr onset layer and a CoCrPtB magnetic layerHITACHI GLOBEL STORAGE TECHNOL·Filed 2001·Granted Aug 19, 2003·10 cites·48 claims
- 2865US8975727B2Memory cell having an integrated two-terminal current limiting resistorINTERMOLECULAR INC·Filed 2012·Granted Mar 10, 2015·1 cites·20 claims
- 2964US9276203B2Resistive switching layers including Hf-Al-OINTERMOLECULAR INC·Filed 2012·Granted Mar 1, 2016·1 cites·20 claims
- 3064US6596409B2Onset layer for thin film disk with CoPtCrB alloyHITACHI GLOBAL STORAGE TECH·Filed 2001·Granted Jul 22, 2003·7 cites·42 claims
- 3163US9299926B2Nonvolatile memory device using a tunnel oxide layer and oxygen blocking layer as a current limiter elementTENDULKAR MIHIR·Filed 2012·Granted Mar 29, 2016·1 cites·20 claims
- 3261US8704203B2Transition metal oxide bilayersINTERMOLECULAR INC·Filed 2013·Granted Apr 22, 2014·0 cites·20 claims
- 3361US8470635B2Keyhole-free sloped heater for phase change memoryCHA SOONWOO·Filed 2009·Granted Jun 25, 2013·5 cites·17 claims
- 3460US8846443B2Atomic layer deposition of metal oxides for memory applicationsHONG ZHENDONG·Filed 2011·Granted Sep 30, 2014·1 cites·19 claims
- 3558US9275727B2Multi-level memory array having resistive elements for multi-bit data storageINTERMOLECULAR INC·Filed 2015·Granted Mar 1, 2016·1 cites·20 claims
- 3658US8809205B2Sequential atomic layer deposition of electrodes and resistive switching componentsINTERMOLECULAR INC·Filed 2012·Granted Aug 19, 2014·0 cites·19 claims
- 3758US2014361235A1Nonvolatile Resistive Memory Element With A Metal Nitride Containing Switching LayerINTERMOLECULAR INC·Filed 2014·Application pending·0 cites
- 3857US9006026B2Atomic layer deposition of metal oxides for memory applicationsINTERMOLECULAR INC·Filed 2014·Granted Apr 14, 2015·0 cites·17 claims
- 3956US9178148B2Resistive random access memory cell having three or more resistive statesINTERMOLECULAR INC·Filed 2015·Granted Nov 3, 2015·1 cites·14 claims
- 4056US8987697B2Transition metal oxide bilayersINTERMOLECULAR INC·Filed 2014·Granted Mar 24, 2015·0 cites·9 claims
- 4156US8735864B2Nonvolatile memory device using a tunnel nitride as a current limiter elementINTERMOLECULAR INC·Filed 2013·Granted May 27, 2014·1 cites·20 claims
- 4255US8552413B2Nonvolatile memory device using a tunnel nitride as a current limiter elementTENDULKAR MIHIR·Filed 2012·Granted Oct 8, 2013·1 cites·19 claims
- 4354US9087978B1Transition metal oxide bilayersINTERMOLECULAR INC·Filed 2015·Granted Jul 21, 2015·0 cites·20 claims
- 4453US9343673B2Method for forming metal oxides and silicides in a memory deviceINTERMOLECULAR INC·Filed 2015·Granted May 17, 2016·0 cites·20 claims
- 4553US9082969B2Keyhole-free sloped heater for phase change memoryMICRON TECHNOLOGY INC·Filed 2013·Granted Jul 14, 2015·1 cites·26 claims
- 4653US8975114B2Method for forming metal oxides and silicides in a memory deviceINTERMOLECULAR INC·Filed 2013·Granted Mar 10, 2015·0 cites·19 claims
- 4750US2014175367A1Materials for Thin Resisive Switching Layers of Re-RAM CellsINTERMOLECULAR INC·Filed 2012·Application pending·0 cites
- 4846US2005031909A1Magnetic thin film media with a pre-seed layer of CrTiFiled 2004·Application pending·0 cites
- 4943US2014175360A1Bilayered Oxide Structures for ReRAM CellsINTERMOLECULAR INC·Filed 2012·Application pending·0 cites
- 5041US6803119B2Oriented magnetic recording media on a nonmetallic substrateHITACHI GLOBAL STORAGE TECH·Filed 2001·Granted Oct 12, 2004·0 cites·1 claims
Showing the top 50 of 51 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →