Inventor · disambiguated record
Titash Rakshit
Also filed as: RAKSHIT TITASH
84 granted patents·10 pending applications·696 citations·filing 2006–2024
99Inventor score
Top patents by PatentIndex Score
94 records- 0198US9812449B2Multi-VT gate stack for III-V nanosheet devices with reduced parasitic capacitanceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Nov 7, 2017·30 cites·20 claims
- 0298US9129829B2Silicon and silicon germanium nanowire structuresKUHN KELIN J·Filed 2014·Granted Sep 8, 2015·62 cites·13 claims
- 0398US8753942B2Silicon and silicon germanium nanowire structuresKUHN KELIN J·Filed 2010·Granted Jun 17, 2014·144 cites·30 claims
- 0498US7407847B2Stacked multi-gate transistor design and method of fabricationINTEL CORP·Filed 2006·Granted Aug 5, 2008·99 cites·19 claims
- 0597US7838373B2Replacement spacers for MOSFET fringe capacitance reduction and processes of making sameINTEL CORP·Filed 2008·Granted Nov 23, 2010·52 cites·21 claims
- 0696US7947971B2Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drainsINTEL CORP·Filed 2010·Granted May 24, 2011·24 cites·10 claims
- 0795US11983622B2High-density neuromorphic computing elementSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted May 14, 2024·1 cites·15 claims
- 0895US9685564B2Gate-all-around field effect transistors with horizontal nanosheet conductive channel structures for MOL/inter-channel spacing and related cell architecturesSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jun 20, 2017·13 cites·20 claims
- 0995US7759142B1Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drainsINTEL CORP·Filed 2008·Granted Jul 20, 2010·29 cites·17 claims
- 1094US10878317B2Method and system for performing analog complex vector-matrix multiplicationSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Dec 29, 2020·13 cites·19 claims
- 1194US10084058B2Quantum well MOSFET channels having lattice mismatch with metal source/drains, and conformal regrowth source/drainsINTEL CORP·Filed 2016·Granted Sep 25, 2018·7 cites·14 claims
- 1294US8258498B2Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drainsMAJHI PRASHANT·Filed 2011·Granted Sep 4, 2012·15 cites·17 claims
- 1394US8120073B2Trigate transistor having extended metal gate electrodeRAKSHIT TITASH·Filed 2008·Granted Feb 21, 2012·35 cites·12 claims
- 1494US7700975B2Schottky barrier metal-germanium contact in metal-germanium-metal photodetectorsINTEL CORP·Filed 2006·Granted Apr 20, 2010·26 cites·17 claims
- 1593US11966783B1Real time scheduling using expected application resource usageSYNC COMPUTING CORP·Filed 2021·Granted Apr 23, 2024·8 cites·18 claims
- 1693US9595581B2Silicon and silicon germanium nanowire structuresINTEL CORP·Filed 2015·Granted Mar 14, 2017·7 cites·19 claims
- 1792US9960232B2Horizontal nanosheet FETs and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted May 1, 2018·7 cites·13 claims
- 1892US9793403B2Multi-layer fin field effect transistor devices and methods of forming the sameOBRADOVIC BORNA J·Filed 2016·Granted Oct 17, 2017·9 cites·20 claims
- 1989US8501508B2Method of forming quantum well mosfet channels having uni-axial strains caused by metal source/drainsMAJHI PRASHANT·Filed 2012·Granted Aug 6, 2013·7 cites·25 claims
- 2089US2025185316A1Silicon and silicon germanium nanowire structuresSONY GROUP CORP·Filed 2024·Application pending·0 cites
- 2188US10790002B2Giant spin hall-based compact neuromorphic cell optimized for differential read inferenceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Sep 29, 2020·5 cites·17 claims
- 2288US8115235B2Modulation-doped halo in quantum well field-effect transistors, apparatus made therewith, and methods of using samePILLARISETTY RAVI·Filed 2009·Granted Feb 14, 2012·15 cites·12 claims
- 2387US10910313B2Integrated circuit including field effect transistors having a contact on active gate compatible with a small cell area having a small contacted poly pitchSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Feb 2, 2021·5 cites·12 claims
- 2487US8022487B2Increasing body dopant uniformity in multi-gate transistor devicesINTEL CORP·Filed 2008·Granted Sep 20, 2011·11 cites·7 claims
- 2586US12333422B2High-density neuromorphic computing elementSAMSUNG ELECTRONICS CO LTD·Filed 2024·Granted Jun 17, 2025·0 cites·20 claims
- 2685US11101320B2System and method for efficient enhancement of an on/off ratio of a bitcell based on 3T2R binary weight cell with spin orbit torque MJTs (SOT-MTJs)SAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Aug 24, 2021·1 cites·19 claims
- 2784US11461620B2Multi-bit, SoC-compatible neuromorphic weight cell using ferroelectric FETsSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Oct 4, 2022·5 cites·14 claims
- 2884US10909449B2Monolithic multi-bit weight cell for neuromorphic computingSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Feb 2, 2021·3 cites·20 claims
- 2984US10026751B2Semiconductor device including a repeater/buffer at higher metal routing layers and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jul 17, 2018·4 cites·17 claims
- 3083US10585630B2Selectorless 3D stackable memorySAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Mar 10, 2020·3 cites·16 claims
- 3183US7833889B2Apparatus and methods for improving multi-gate device performanceINTEL CORP·Filed 2008·Granted Nov 16, 2010·7 cites·14 claims
- 3279US9224754B2Stress in trigate devices using complimentary gate fill materialsRAKSHIT TITASH·Filed 2014·Granted Dec 29, 2015·3 cites·11 claims
- 3379US7763943B2Reducing external resistance of a multi-gate device by incorporation of a partial metallic finINTEL CORP·Filed 2007·Granted Jul 27, 2010·7 cites·12 claims
- 3476US12142634B2Silicon and silicon germanium nanowire structuresSONY GROUP CORP·Filed 2021·Granted Nov 12, 2024·0 cites·25 claims
- 3576US11769540B2Giant spin hall-based compact neuromorphic cell optimized for differential read inferenceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Sep 26, 2023·0 cites·9 claims
- 3676US10679688B2Ferroelectric-based memory cell usable in on-logic chip memorySAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jun 9, 2020·3 cites·20 claims
- 3776US8362566B2Stress in trigate devices using complimentary gate fill materialsINTEL CORP·Filed 2008·Granted Jan 29, 2013·4 cites·5 claims
- 3876US8344425B2Multi-gate III-V quantum well structuresINTEL CORP·Filed 2009·Granted Jan 1, 2013·5 cites·6 claims
- 3974US9805795B2Zero leakage, high noise margin coupled giant spin hall based retention latchSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Oct 31, 2017·2 cites·19 claims
- 4074US8507948B2Junctionless accumulation-mode devices on prominent architectures, and methods of making sameCAPPELLANI ANNALISA·Filed 2010·Granted Aug 13, 2013·3 cites·17 claims
- 4173US12379933B2Ultra pipelined accelerator for machine learning inferenceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Aug 5, 2025·1 cites·19 claims
- 4273US10991799B2Silicon and silicon germanium nanowire structuresSONY CORP·Filed 2020·Granted Apr 27, 2021·0 cites·19 claims
- 4372US11727258B2Multi-bit, SoC-compatible neuromorphic weight cell using ferroelectric FETsSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Aug 15, 2023·0 cites·18 claims
- 4472US10585254B2Vertical optical via and method of fabricationSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Mar 10, 2020·1 cites·11 claims
- 4571US11586901B2High-density neuromorphic computing elementSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Feb 21, 2023·0 cites·5 claims
- 4671US8017933B2Compositionally-graded quantum-well channels for semiconductor devicesINTEL CORP·Filed 2008·Granted Sep 13, 2011·4 cites·15 claims
- 4770US10861950B2Integrated circuit including field effect transistors having a contact on active gate compatible with a small cell area having a small contacted poly pitchSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Dec 8, 2020·1 cites·16 claims
- 4870US10008580B2FET including an InGaAs channel and method of enhancing performance of the FETSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jun 26, 2018·1 cites·13 claims
- 4969US11348629B2Giant spin hall-based compact neuromorphic cell optimized for differential read inferenceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted May 31, 2022·0 cites·20 claims
- 5068US12260324B2Monolithic multi-bit weight cell for neuromorphic computingSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Mar 25, 2025·0 cites·17 claims
Showing the top 50 of 94 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →