Inventor · disambiguated record
Timothy Vasen
Also filed as: VASEN TIMOTHY
25 granted patents·7 pending applications·24 citations·filing 2018–2024
93Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD32
Top patents by PatentIndex Score
32 records- 0197US11659721B2Methods of manufacturing a field effect transistor using carbon nanotubes and field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 23, 2023·3 cites·20 claims
- 0296US11653507B2Gate all around semiconductor structure with diffusion breakTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 16, 2023·2 cites·20 claims
- 0392US11088337B2Methods of manufacturing a field effect transistor using carbon nanotubes and field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 10, 2021·6 cites·20 claims
- 0490US11276832B2Semiconductor structure with diffusion break and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 15, 2022·4 cites·20 claims
- 0589US11769798B2Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 26, 2023·1 cites·20 claims
- 0688US11165032B2Field effect transistor using carbon nanotubesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 2, 2021·2 cites·20 claims
- 0786US2025151347A1Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0885US2024414927A1Methods of Manufacturing a Field Effect Transistor Using Carbon Nanotubes and Field Effect TransistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0984US12218198B2Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 4, 2025·0 cites·20 claims
- 1084US2025098515A1Method of forming semiconductor device having carbon nanotubeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1183US12069874B2Methods of manufacturing a field effect transistor using carbon nanotubes and field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 20, 2024·0 cites·20 claims
- 1283US11437594B2Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 6, 2022·1 cites·20 claims
- 1383US2024381673A1Semiconductor devices using carbon nanotubesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1482US2024365569A1Gate all around semiconductor structure with diffusion breakTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1580US12089423B2Gate all around semiconductor structure with diffusion breakTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 10, 2024·0 cites·20 claims
- 1679US11088246B2Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 10, 2021·1 cites·20 claims
- 1779US10923659B2Wafers for use in aligning nanotubes and methods of making and using the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 16, 2021·2 cites·20 claims
- 1878US12010856B2Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 11, 2024·0 cites·20 claims
- 1978US11271163B2Method of forming semiconductor device having carbon nanotubeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 8, 2022·0 cites·19 claims
- 2078US10879469B1Method of manufacturing a field effect transistor using nanotube structures and a field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 29, 2020·2 cites·20 claims
- 2176US12193318B2Method of forming semiconductor device having carbon nanotubeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 7, 2025·0 cites·20 claims
- 2276US11728418B2Tunnel field-effect transistor with reduced trap-assisted tunneling leakageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 15, 2023·0 cites·20 claims
- 2375US2023361202A1Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2474US11764289B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 19, 2023·0 cites·20 claims
- 2574US11557726B2Wafers for use in aligning nanotubes and methods of making and using the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 17, 2023·0 cites·20 claims
- 2671US2022052283A1Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Application pending·0 cites
- 2770US11411103B2Tunnel field-effect transistor with reduced trap-assisted tunneling leakageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 9, 2022·0 cites·20 claims
- 2870US11349022B2Tunnel field-effect transistor with reduced trap-assisted tunneling leakageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 31, 2022·0 cites·20 claims
- 2963US11004958B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 11, 2021·0 cites·20 claims
- 3063US10672899B2Tunnel field-effect transistor with reduced trap-assisted tunneling leakageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 2, 2020·0 cites·17 claims
- 3162US10727427B2Method of manufacturing a field effect transistor using carbon nanotubes and a field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 28, 2020·0 cites·20 claims
- 3254US11158807B2Field effect transistor and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 26, 2021·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →