Inventor · disambiguated record
Ting-Chun Wang
Also filed as: WANG TING · WANG TING-CHUN
77 granted patents·30 pending applications·317 citations·filing 1999–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD47NVIDIA CORP26TAIWAN SEMICONDUCTOR MFG15HUAWEI TECH CO LTD5JANGJIAN SHIU-KO2
Top patents by PatentIndex Score
107 records- 0198US9876114B2Structure and method for 3D FinFET metal gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 23, 2018·61 cites·20 claims
- 0297US11610435B2Generative adversarial neural network assisted video compression and broadcastNVIDIA CORP·Filed 2020·Granted Mar 21, 2023·16 cites·29 claims
- 0397US11580395B2Generative adversarial neural network assisted video reconstructionNVIDIA CORP·Filed 2020·Granted Feb 14, 2023·8 cites·26 claims
- 0497US9257476B2Grids in backside illumination image sensor chips and methods for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Feb 9, 2016·11 cites·20 claims
- 0596US11625613B2Generative adversarial neural network assisted compression and broadcastNVIDIA CORP·Filed 2021·Granted Apr 11, 2023·6 cites·20 claims
- 0696US9478581B2Grids in backside illumination image sensor chips and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 25, 2016·9 cites·20 claims
- 0795US9337192B2Metal gate stack having TaAlCN layerTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted May 10, 2016·13 cites·18 claims
- 0894US11610122B2Generative adversarial neural network assisted reconstructionNVIDIA CORP·Filed 2021·Granted Mar 21, 2023·3 cites·20 claims
- 0994US9728646B2Flat STI surface for gate oxide uniformity in Fin FET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 8, 2017·7 cites·19 claims
- 1094US9577102B1Method of forming gate and finFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 21, 2017·18 cites·19 claims
- 1192US12333638B2Generating images of object motion using one or more neural networksNVIDIA CORP·Filed 2021·Granted Jun 17, 2025·2 cites·30 claims
- 1292US10984286B2Domain stylization using a neural network modelNVIDIA CORP·Filed 2019·Granted Apr 20, 2021·16 cites·20 claims
- 1391US9406675B1FinFET structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 2, 2016·7 cites·20 claims
- 1490US11775829B2Generative adversarial neural network assisted video reconstructionNVIDIA CORP·Filed 2022·Granted Oct 3, 2023·1 cites·28 claims
- 1590US10192988B2Flat STI surface for gate oxide uniformity in Fin FET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 29, 2019·4 cites·20 claims
- 1689US10026838B2Fin-type field effect transistor and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 17, 2018·11 cites·16 claims
- 1788US10629708B2Semiconductor device structure with barrier layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 21, 2020·4 cites·20 claims
- 1888US9041140B2Grids in backside illumination image sensor chips and methods for forming the sameJANGJIAN SHIU-KO·Filed 2012·Granted May 26, 2015·4 cites·19 claims
- 1986US11929328B2Conductive contact having barrier layers with different depthsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 12, 2024·1 cites·20 claims
- 2086US2025287637A1Flat sti surface for gate oxide uniformity in fin fet devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2183US10886226B2Conductive contact having staircase barrier layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 5, 2021·2 cites·20 claims
- 2283US9337303B2Metal gate stack having TiAICN as work function layer and/or blocking/wetting layerTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted May 10, 2016·6 cites·20 claims
- 2383US2024379557A1Conductive contact having barrier layers with different depthsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2481US12046662B2Semiconductor device structure with barrier layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 23, 2024·0 cites·20 claims
- 2580US2024079332A1Conductive contact having barrier layers with different depthsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2679US9543234B2In-situ formation of silicon and tantalum containing barrierTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 10, 2017·3 cites·18 claims
- 2778US11898257B1Carbon coated electrodesNANOFILM TECH INTERNATIONAL LIMITED·Filed 2023·Granted Feb 13, 2024·0 cites·21 claims
- 2878US9478660B2Protection layer on fin of fin field effect transistor (FinFET) device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 25, 2016·2 cites·18 claims
- 2978US6828226B1Removal of SiON residue after CMPTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Dec 7, 2004·24 cites·28 claims
- 3077US12443853B1Video synthesis using one or more neural networksNVIDIA CORP·Filed 2024·Granted Oct 14, 2025·0 cites·20 claims
- 3177US11934959B2Video synthesis using one or more neural networksNVIDIA CORP·Filed 2020·Granted Mar 19, 2024·1 cites·31 claims
- 3277US11784240B2Semiconductor device structure with barrier layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 10, 2023·0 cites·20 claims
- 3377US10192985B2FinFET with doped isolation insulating layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 29, 2019·3 cites·20 claims
- 3477US9893185B2Fin field effect transistor and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 13, 2018·3 cites·17 claims
- 3576US2025363700A1Generating images of object motion using one or more neural networksNVIDIA CORP·Filed 2025·Application pending·0 cites
- 3675US12336217B2Flat STI surface for gate oxide uniformity in Fin FET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 17, 2025·0 cites·20 claims
- 3773US11670704B2Semiconductor device structure with barrier layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 6, 2023·0 cites·20 claims
- 3873US11011641B2Flat STI surface for gate oxide uniformity in Fin FET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 18, 2021·0 cites·20 claims
- 3972US9064823B2Method for qualifying a semiconductor wafer for subsequent processingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jun 23, 2015·3 cites·19 claims
- 4072US8946083B2In-situ formation of silicon and tantalum containing barrierJANGJIAN SHIU-KO·Filed 2011·Granted Feb 3, 2015·2 cites·20 claims
- 4171US11031488B2Semiconductor device structure with barrier layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 8, 2021·0 cites·20 claims
- 4271US9985133B2Protection layer on fin of fin field effect transistor (FinFET) device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 29, 2018·1 cites·17 claims
- 4369US12367628B2Speech-driven animation using one or more neural networksNVIDIA CORP·Filed 2022·Granted Jul 22, 2025·0 cites·24 claims
- 4468US10998194B2Metal gate stack having TaAlCN layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 4, 2021·0 cites·20 claims
- 4567US11598016B2Electrochemical plating system and method of usingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 7, 2023·0 cites·20 claims
- 4667US9508548B2Method for forming barrier layer for dielectric layers in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 29, 2016·1 cites·20 claims
- 4766US10529863B2Flat STI surface for gate oxide uniformity in Fin FET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 7, 2020·0 cites·20 claims
- 4866US2023186428A1Techniques to use a neural network to expand an imageNVIDIA CORP·Filed 2023·Application pending·0 cites
- 4965US11024716B2Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 1, 2021·0 cites·20 claims
- 5064US10483112B2Metal gate stack having TaAlCN layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 19, 2019·0 cites·20 claims
Showing the top 50 of 107 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →