Inventor · disambiguated record
Tomoyuki Furuhata
Also filed as: FURUHATA TOMOYUKI
33 granted patents·4 pending applications·461 citations·filing 1990–2016
97Inventor score
Top patents by PatentIndex Score
37 records- 0193US6294427B1Non-volatile semiconductor memory device and fabrication method thereofSEIKO EPSON CORP·Filed 2000·Granted Sep 25, 2001·52 cites·6 claims
- 0288US6696340B2Semiconductor devices having a non-volatile memory transistor and methods for manufacturing the sameSEIKO EPSON CORP·Filed 2002·Granted Feb 24, 2004·48 cites·22 claims
- 0384US6429073B1Methods for manufacturing semiconductor devices having a non-volatile memory transistorSEIKO EPSON CORP·Filed 2000·Granted Aug 6, 2002·29 cites·30 claims
- 0483US6337250B2Semiconductor device containing MOS elements and method of fabricating the sameSEIKO EPSON CORP·Filed 1998·Granted Jan 8, 2002·55 cites·12 claims
- 0581US7972917B2Method for manufacturing semiconductor device and semiconductor deviceSEIKO EPSON CORP·Filed 2009·Granted Jul 5, 2011·9 cites·19 claims
- 0680US6522587B1Non-volatile semiconductor memory devicesSEIKO EPSON CORP·Filed 2000·Granted Feb 18, 2003·22 cites·27 claims
- 0778US6265266B1Method of forming a two transistor flash EPROM cellXILINX INC·Filed 1996·Granted Jul 24, 2001·44 cites·31 claims
- 0878US5059549AMethod of manufacturing a bi-mos device with a polycrystalline resistorSEIKO EPSON CORP·Filed 1990·Granted Oct 22, 1991·43 cites·4 claims
- 0973US6717204B1Semiconductor devices having a non-volatile memory transistorSEIKO EPSON CORP·Filed 2000·Granted Apr 6, 2004·19 cites·29 claims
- 1073US6537869B1Semiconductor devices having a non-volatile memory transistor and methods for manufacturing the sameSEIKO EPSON CORP·Filed 2000·Granted Mar 25, 2003·16 cites·31 claims
- 1171US8330219B2Semiconductor device with high-voltage breakdown protectionFURUHATA TOMOYUKI·Filed 2009·Granted Dec 11, 2012·6 cites·6 claims
- 1267US6828681B2Semiconductor devices having contact pads and methods of manufacturing the sameSEIKO EPSON CORP·Filed 2002·Granted Dec 7, 2004·14 cites·27 claims
- 1364US9997625B2Semiconductor device and method for manufacturing the sameSEIKO EPSON CORP·Filed 2015·Granted Jun 12, 2018·1 cites·11 claims
- 1464US6812519B2Semiconductor devices having a non-volatile memory transistor and methods for manufacturing the sameSEIKO EPSON CORP·Filed 2001·Granted Nov 2, 2004·9 cites·26 claims
- 1563US6249021B1Nonvolatile semiconductor memory device and method of manufacturing the sameSEIKO EPSON CORP·Filed 1998·Granted Jun 19, 2001·21 cites·13 claims
- 1662US6673678B2Non-volatile semiconductor memory device and manufacturing method thereofSEIKO EPSON CORP·Filed 2001·Granted Jan 6, 2004·7 cites·14 claims
- 1757US6756629B1Semiconductor devices including a multi-well and split-gate non-volatile memory transistor structureSEIKO EPSON CORP·Filed 2000·Granted Jun 29, 2004·8 cites·9 claims
- 1853US6320218B1Non-volatile semiconductor memory device and manufacturing method thereofSEIKO EPSON CORP·Filed 1999·Granted Nov 20, 2001·10 cites·21 claims
- 1949US7026685B2Semiconductor devices having a non-volatile memory transistor and methods for manufacturing the sameSEIKO EPSON CORP·Filed 2004·Granted Apr 11, 2006·3 cites·3 claims
- 2047US10319656B2Semiconductor device and electronic apparatus encapsulated in resin with embedded filler particlesSEIKO EPSON CORP·Filed 2016·Granted Jun 11, 2019·0 cites·12 claims
- 2147US6838336B2Semiconductor devices having a non-volatile memory transistor and methods for manufacturing the sameSEIKO EPSON CORP·Filed 2002·Granted Jan 4, 2005·2 cites·14 claims
- 2247US6355526B1Non-volatile semiconductor memory device and method of manufacturing the sameSEIKO EPSON CORP·Filed 1999·Granted Mar 12, 2002·9 cites·8 claims
- 2347US5315150ASemiconductor device and method of manufacturing the sameSEIKO EPSON CORP·Filed 1991·Granted May 24, 1994·16 cites·20 claims
- 2446US9190477B2Semiconductor device and manufacturing method thereforSEIKO EPSON CORP·Filed 2014·Granted Nov 17, 2015·0 cites·11 claims
- 2545US2013062694A1Semiconductor device with high-voltage breakdown protectionSEIKO EPSON CORP·Filed 2012·Application pending·0 cites
- 2644US9012312B2Semiconductor device manufacturing methodSEIKO EPSON CORP·Filed 2014·Granted Apr 21, 2015·0 cites·5 claims
- 2743US7163861B2Semiconductor devices, methods of manufacturing semiconductor devices, circuit substrates and electronic devicesSEIKO EPSON CORP·Filed 2004·Granted Jan 16, 2007·1 cites·21 claims
- 2841US9412738B2Semiconductor deviceSEIKO EPSON CORP·Filed 2015·Granted Aug 9, 2016·0 cites·12 claims
- 2939US6921964B2Semiconductor device having a non-volatile memory transistor formed on a semiconductorSEIKO EPSON CORP·Filed 2002·Granted Jul 26, 2005·3 cites·5 claims
- 3039US6122192ANon-volatile semiconductor memory device and fabrication method thereofSEIKO EPSON CORP·Filed 1999·Granted Sep 19, 2000·4 cites·20 claims
- 3138US5336911ASemiconductor deviceSEIKO EPSON CORP·Filed 1992·Granted Aug 9, 1994·6 cites·2 claims
- 3237US6800894B1Semiconductor devices, circuit substrates and electronic devicesSEIKO EPSON CORP·Filed 1999·Granted Oct 5, 2004·3 cites·30 claims
- 3337US2003173672A1Semiconductor devices and methods for manufacturing the sameFiled 2002·Application pending·0 cites
- 3436US9397171B2Semiconductor device and manufacturing method for the sameSEIKO EPSON CORP·Filed 2015·Granted Jul 19, 2016·0 cites·17 claims
- 3534US2002132424A1Semiconductor devices having a non-volatile memory transistor and methods for manufacturing the sameFiled 2001·Application pending·0 cites
- 3634US2004207010A1Semiconductor device and method of manufacturing the sameFURUHATA TOMOYUKI·Filed 2004·Application pending·0 cites
- 3730US5250447ASemiconductor device and method of manufacturing the sameSEIKO EPSON CORP·Filed 1991·Granted Oct 5, 1993·1 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →