Inventor · disambiguated record
Tomoshi Futatsuya
Also filed as: FUTATSUYA TOMOSHI
24 granted patents·1 pending application·1,190 citations·filing 1991–2012
97Inventor score
Top patents by PatentIndex Score
25 records- 0196US5745417AElectrically programmable and erasable nonvolatile semiconductor memory device and operating method thereforMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Apr 28, 1998·135 cites·26 claims
- 0295US5297096ANonvolatile semiconductor memory device and data erasing method thereofMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Mar 22, 1994·135 cites·55 claims
- 0394US5428568AElectrically erasable and programmable non-volatile memory device and a method of operating the sameMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Jun 27, 1995·120 cites·13 claims
- 0494US5363330ANon-volatile semiconductor memory device incorporating data latch and address counter for page mode programmingMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Nov 8, 1994·94 cites·6 claims
- 0590US5371705AInternal voltage generator for a non-volatile semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Dec 6, 1994·76 cites·51 claims
- 0689US5898606AElectrically programmable and erasable nonvolatile semiconductor memory device and operating method thereforMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Apr 27, 1999·63 cites·2 claims
- 0788US5659505AElectrically programmable and erasable nonvolatile semiconductor memory device and operating method thereforMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Aug 19, 1997·67 cites·34 claims
- 0884US6243292B1Nonvolatile semiconductor memory device capable of reducing memory array areaMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Jun 5, 2001·39 cites·8 claims
- 0983US6069518ASemiconductor device allowing generation of desired internal voltage at high accuracyMITSUBISHI ELECTRIC CORP·Filed 1994·Granted May 30, 2000·62 cites·17 claims
- 1082US5999475AInternal potential generation circuit that can output a plurality of potentials, suppressing increase in circuit areaMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Dec 7, 1999·52 cites·13 claims
- 1182US5548557ANonvolatile semiconductor memory device with a row redundancy circuitMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Aug 20, 1996·42 cites·39 claims
- 1281US8339850B2Semiconductor deviceTANIZAKI HIROAKI·Filed 2010·Granted Dec 25, 2012·8 cites·6 claims
- 1381US5847994ANon-volatile semiconductor memory device having a back ground operation modeMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Dec 8, 1998·62 cites·5 claims
- 1481US5521864ANon-volatile semiconductor memory device allowing fast verifying operationMITSUBISHI ELECTRIC CORP·Filed 1995·Granted May 28, 1996·50 cites·20 claims
- 1580US6515900B2Non-volatile memory with background operation functionMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Feb 4, 2003·31 cites·11 claims
- 1679US5602778ANonvolatile semiconductor memory device with a row redundancy circuitMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Feb 11, 1997·39 cites·3 claims
- 1777US5615149ANon-volatile semiconductor memory device incorporating data latch and address counter for page mode programmingMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Mar 25, 1997·28 cites·6 claims
- 1873US6388921B1Nonvolatile semiconductor memory device with improved reliability and operation speedMITSUBISHI ELECTRIC CORP·Filed 2000·Granted May 14, 2002·20 cites·17 claims
- 1972US5402382ANonvolatile semiconductor memory device capable of erasing by a word line unitMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Mar 28, 1995·32 cites·24 claims
- 2069US6483748B2Nonvolatile memory with background operation functionMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Nov 19, 2002·17 cites·12 claims
- 2150US6831864B2Method of erasing data of nonvolatile semiconductor memory unitRENESAS TECH CORP·Filed 2003·Granted Dec 14, 2004·7 cites·4 claims
- 2247US6760259B1Non-volatile semiconductor memory device that can be fabricated with erasure unit modifiedRENESAS TECH CORP·Filed 2003·Granted Jul 6, 2004·5 cites·20 claims
- 2344US5521863ANon-volatile semiconductor memory device incorporating data latch and address counter for page mode programmingMITSUBISHI ELECTRIC CORP·Filed 1995·Granted May 28, 1996·6 cites·6 claims
- 2442US2013100739A1Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2012·Application pending·0 cites
- 2530US5485421ANon-volatile semiconductor memory device incorporating data latch and address counter for page mode programmingMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Jan 16, 1996·0 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →