Inventor · disambiguated record
Toshikazu Hirai
Also filed as: HIRAI TOSHIKAZU
17 granted patents·1 pending application·275 citations·filing 1994–2014
93Inventor score
Top patents by PatentIndex Score
18 records- 0187US6882210B2Semiconductor switching deviceSANYO ELECTRIC CO·Filed 2001·Granted Apr 19, 2005·51 cites·15 claims
- 0283US5590412ACommunication apparatus using common amplifier for transmission and receptionSANYO ELECTRIC CO·Filed 1994·Granted Dec 31, 1996·77 cites·19 claims
- 0381US6580107B2Compound semiconductor device with depletion layer stop regionSANYO ELECTRIC CO·Filed 2001·Granted Jun 17, 2003·28 cites·30 claims
- 0477US6946891B2Switching circuit deviceSANYO ELECTRIC CO·Filed 2004·Granted Sep 20, 2005·25 cites·12 claims
- 0569US6573529B2Semiconductor switching deviceSANYO ELECTRIC CO·Filed 2002·Granted Jun 3, 2003·15 cites·12 claims
- 0664US6657266B2Semiconductor switching deviceSANYO ELECTRIC CO·Filed 2002·Granted Dec 2, 2003·12 cites·26 claims
- 0761US5585676AIC chip for different type IC packagesSANYO ELECTRIC CO·Filed 1994·Granted Dec 17, 1996·29 cites·16 claims
- 0861US5559457ADouble-balanced mixer circuitSANYO ELECTRIC CO·Filed 1994·Granted Sep 24, 1996·24 cites·11 claims
- 0956US6627956B2Semiconductor switching deviceSANYO ELECTRIC CO·Filed 2002·Granted Sep 30, 2003·7 cites·12 claims
- 1055US9735142B2Method of forming a protecting element comprising a first high concentration impurity region separated by an insulating region of a substrateSEMICONDUCTOR COMPONENTS IND LLC·Filed 2014·Granted Aug 15, 2017·0 cites·8 claims
- 1147US8742506B2Protecting element having first and second high concentration impurity regions separated by insulating regionASANO TETSURO·Filed 2012·Granted Jun 3, 2014·0 cites·15 claims
- 1247US7206552B2Semiconductor switching deviceSANYO ELECTRIC CO·Filed 2002·Granted Apr 17, 2007·3 cites·9 claims
- 1346US6867115B2Compound semiconductor deviceSANYO ELECTRIC CO·Filed 2002·Granted Mar 15, 2005·2 cites·9 claims
- 1442US6903426B2Semiconductor switching deviceSANYO ELECTRIC CO·Filed 2002·Granted Jun 7, 2005·1 cites·12 claims
- 1542US6894371B2Semiconductor deviceSANYO ELECTRIC CO·Filed 2003·Granted May 17, 2005·1 cites·10 claims
- 1638US7732868B2Semiconductor deviceSANYO ELECTRIC CO·Filed 2002·Granted Jun 8, 2010·0 cites·16 claims
- 1738US2005121730A1Protective deviceFiled 2003·Application pending·0 cites
- 1836US6737890B2Switching circuit deviceSANYO ELECTRIC CO·Filed 2002·Granted May 18, 2004·0 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →