Inventor · disambiguated record
Tomohiro Hirai
Also filed as: HIRAI TOMOHIRO
6 granted patents·3 pending applications·15 citations·filing 2010–2020
76Inventor score
Top patents by PatentIndex Score
9 records- 0189US10256100B2Manufacturing method of semiconductor device and semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2015·Granted Apr 9, 2019·7 cites·3 claims
- 0277US9190505B2Field effect transistor with channel core modified for a backgate bias and method of fabricationRENESAS ELECTRONICS CORP·Filed 2013·Granted Nov 17, 2015·3 cites·7 claims
- 0368US9196715B2Field effect transistor with channel core modified to reduce leakage current and method of fabricationRENESAS ELECTRONICS CORP·Filed 2013·Granted Nov 24, 2015·2 cites·9 claims
- 0461US8390050B2Semiconductor device and method of manufacturing the sameHIRAI TOMOHIRO·Filed 2010·Granted Mar 5, 2013·3 cites·22 claims
- 0550US11888020B2Semiconductor device, solid-state imaging device, and method for manufacturing semiconductor deviceSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2020·Granted Jan 30, 2024·0 cites·13 claims
- 0647US11837668B2Semiconductor element and semiconductor deviceSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2019·Granted Dec 5, 2023·0 cites·7 claims
- 0746US2016020312A1Field effect transistor with channel core modified to reduce leakage current and method of fabricationRENESAS ELECTRONICS CORP·Filed 2015·Application pending·0 cites
- 0844US2016027872A1Field effect transistor with channel core modified for a backgate bias and method of fabricationRENESAS ELECTRONICS CORP·Filed 2015·Application pending·0 cites
- 0940US2022384561A1Resistance element and electronic deviceSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2020·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →