Inventor · disambiguated record
Tomohisa Hirayama
Also filed as: HIRAYAMA TOMOHISA
6 granted patents·5 pending applications·23 citations·filing 2001–2023
75Inventor score
Top patents by PatentIndex Score
11 records- 0183US7012829B2Ferroelectric memory and data reading method for sameFUJITSU LTD·Filed 2005·Granted Mar 14, 2006·16 cites·9 claims
- 0266US9401192B2Ferroelectric memory device and timing circuit to control the boost level of a word lineFUJITSU SEMICONDUCTOR LTD·Filed 2014·Granted Jul 26, 2016·3 cites·13 claims
- 0353US8004362B2Gate bias circuitNEC CORP·Filed 2007·Granted Aug 23, 2011·1 cites·11 claims
- 0452US2023326993A1Manufacturing method for semiconductor element, semiconductor element, and semiconductor deviceKYOCERA CORP·Filed 2023·Application pending·0 cites
- 0546US2023022774A1Manufacturing method for semiconductor element, and semiconductor deviceKYOCERA CORP·Filed 2020·Application pending·0 cites
- 0645US2022359196A1Method for manufacturing semiconductor element, and semiconductor deviceKYOCERA CORP·Filed 2020·Application pending·0 cites
- 0743US9190136B2Ferroelectric memory deviceFUJITSU SEMICONDUCTOR LTD·Filed 2014·Granted Nov 17, 2015·0 cites·8 claims
- 0842US2022209026A1Semiconductor device and method of manufacturing semiconductor deviceKYOCERA CORP·Filed 2020·Application pending·0 cites
- 0940US6842074B2Base bias circuit, and power amplifier using the base bias circuitNEC CORP·Filed 2001·Granted Jan 11, 2005·3 cites·15 claims
- 1028US2002118067A1Analog amplifier circuitNEC CORP·Filed 2002·Application pending·0 cites
- 1123US8111537B2Semiconductor memoryHIRAYAMA TOMOHISA·Filed 2006·Granted Feb 7, 2012·0 cites·14 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →