Inventor · disambiguated record
Tobias Franz Wolfgang Hoechbauer
Also filed as: HOECHBAUER TOBIAS · HOECHBAUER TOBIAS FRANZ WOLFGANG
11 granted patents·5 pending applications·18 citations·filing 2013–2025
84Inventor score
Files withINFINEON TECHNOLOGIES AG16
Top patents by PatentIndex Score
16 records- 0192US10903078B2Methods for processing a silicon carbide wafer, and a silicon carbide semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2019·Granted Jan 26, 2021·9 cites·28 claims
- 0291US11373863B2Method of manufacturing a silicon carbide device and wafer composite including laser modified zones in a handle substrateINFINEON TECHNOLOGIES AG·Filed 2020·Granted Jun 28, 2022·3 cites·12 claims
- 0389US11476111B2Semiconductor device with a porous portion, wafer composite and method of manufacturing a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2020·Granted Oct 18, 2022·2 cites·13 claims
- 0487US11887894B2Methods for processing a wide band gap semiconductor wafer using a support layer and methods for forming a plurality of thin wide band gap semiconductor wafers using support layersINFINEON TECHNOLOGIES AG·Filed 2021·Granted Jan 30, 2024·1 cites·21 claims
- 0584US12412740B2Semiconductor device with a porous portion, wafer composite and method of manufacturing a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2024·Granted Sep 9, 2025·0 cites·20 claims
- 0682US11107732B2Methods for processing a wide band gap semiconductor wafer, methods for forming a plurality of thin wide band gap semiconductor wafers, and wide band gap semiconductor wafersINFINEON TECHNOLOGIES AG·Filed 2019·Granted Aug 31, 2021·2 cites·19 claims
- 0777US11881397B2Semiconductor device with a porous portion, wafer composite and method of manufacturing a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2022·Granted Jan 23, 2024·0 cites·20 claims
- 0866US12249504B2Manufacturing and reuse of semiconductor substratesINFINEON TECHNOLOGIES AG·Filed 2022·Granted Mar 11, 2025·0 cites·29 claims
- 0966US2025183031A1Method of processing a semiconductor waferINFINEON TECHNOLOGIES AG·Filed 2025·Application pending·0 cites
- 1059US11721547B2Method for manufacturing a silicon carbide substrate for an electrical silicon carbide device, a silicon carbide substrate and an electrical silicon carbide deviceINFINEON TECHNOLOGIES AG·Filed 2013·Granted Aug 8, 2023·1 cites·12 claims
- 1156US11557506B2Methods for processing a semiconductor substrateINFINEON TECHNOLOGIES AG·Filed 2020·Granted Jan 17, 2023·0 cites·19 claims
- 1253US2024047207A1Technique for Forming Cubic Silicon Carbide and Heterojunction Silicon Carbide DeviceINFINEON TECHNOLOGIES AG·Filed 2022·Application pending·0 cites
- 1353US2023051830A1Semiconductor device and method of producing thereofINFINEON TECHNOLOGIES AG·Filed 2022·Application pending·0 cites
- 1450US11576259B2Carrier, laminate and method of manufacturing semiconductor devicesINFINEON TECHNOLOGIES AG·Filed 2019·Granted Feb 7, 2023·0 cites·18 claims
- 1532US2017032992A1Substrate carrier, a method and a processing deviceINFINEON TECHNOLOGIES AG·Filed 2015·Application pending·0 cites
- 1632US2017309484A1Carbon Vacancy Defect Reduction Method for SiCINFINEON TECHNOLOGIES AG·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →