Inventor · disambiguated record
Tomoaki Inokuchi
Also filed as: INOKUCHI TOMOAKI
92 granted patents·26 pending applications·529 citations·filing 2005–2025
99Inventor score
Top patents by PatentIndex Score
118 records- 0198US8357962B2Spin transistor and method of manufacturing the sameTOSHIBA KK·Filed 2010·Granted Jan 22, 2013·49 cites·16 claims
- 0297US7663171B2Magneto-resistance effect element and magnetic memoryTOSHIBA KK·Filed 2005·Granted Feb 16, 2010·51 cites·10 claims
- 0395US7602636B2Spin MOSFETTOSHIBA KK·Filed 2007·Granted Oct 13, 2009·36 cites·58 claims
- 0495US7394684B2Spin-injection magnetic random access memoryTOSHIBA KK·Filed 2006·Granted Jul 1, 2008·39 cites·25 claims
- 0594US10211394B1Magnetic memoryTOSHIBA KK·Filed 2018·Granted Feb 19, 2019·16 cites·13 claims
- 0694US9881660B2Magnetic memoryTOSHIBA KK·Filed 2016·Granted Jan 30, 2018·15 cites·43 claims
- 0791US7750390B2Spin fet and spin memoryTOSHIBA KK·Filed 2006·Granted Jul 6, 2010·20 cites·22 claims
- 0891US7266012B2Magnetoresistive effect element and magnetic memoryTOSHIBA KK·Filed 2006·Granted Sep 4, 2007·28 cites·44 claims
- 0991US7239541B2Spin-injection magnetic random access memoryTOSHIBA KK·Filed 2005·Granted Jul 3, 2007·23 cites·20 claims
- 1090US10170694B1Magnetic memoryTOSHIBA KK·Filed 2018·Granted Jan 1, 2019·10 cites·9 claims
- 1190US10103199B2Magnetic memoryTOSHIBA KK·Filed 2017·Granted Oct 16, 2018·9 cites·12 claims
- 1290US9916882B2Magnetic memoryTOSHIBA KK·Filed 2016·Granted Mar 13, 2018·6 cites·21 claims
- 1390US7973351B2Stack having Heusler alloy, magnetoresistive element and spin transistor using the stack, and method of manufacturing the sameTOSHIBA KK·Filed 2009·Granted Jul 5, 2011·16 cites·12 claims
- 1490US7709867B2Spin MOS field effect transistor and tunneling magnetoresistive effect element using stack having Heusler alloyTOSHIBA KK·Filed 2008·Granted May 4, 2010·14 cites·3 claims
- 1590US7248497B2Spin-injection FETTOSHIBA KK·Filed 2007·Granted Jul 24, 2007·16 cites·19 claims
- 1690US7200037B2Spin-injection FETTOSHIBA KK·Filed 2005·Granted Apr 3, 2007·15 cites·22 claims
- 1789US9520171B2Resistive change memoryTOSHIBA KK·Filed 2015·Granted Dec 13, 2016·10 cites·12 claims
- 1888US8026561B2Spin MOSFET and reconfigurable logic circuitTOSHIBA KK·Filed 2010·Granted Sep 27, 2011·7 cites·11 claims
- 1987US8139403B2Spin memory and spin transistorINOKUCHI TOMOAKI·Filed 2010·Granted Mar 20, 2012·10 cites·13 claims
- 2086US10460784B2Magnetic memory and memory systemTOSHIBA KK·Filed 2018·Granted Oct 29, 2019·2 cites·18 claims
- 2186US10026465B2Nonvolatile memoryTOSHIBA KK·Filed 2017·Granted Jul 17, 2018·6 cites·20 claims
- 2286US7943974B2Spin MOS field effect transistor and tunneling magnetoresistive effect element using stack having Heusler alloyTOSHIBA KK·Filed 2010·Granted May 17, 2011·7 cites·3 claims
- 2383US8637946B2Spin MOSFET and reconfigurable logic circuitSAITO YOSHIAKI·Filed 2011·Granted Jan 28, 2014·4 cites·13 claims
- 2482US8154916B2Nonvolatile memory circuit using spin MOS transistorsSUGIYAMA HIDEYUKI·Filed 2010·Granted Apr 10, 2012·8 cites·5 claims
- 2582US7956395B2Spin transistor and magnetic memoryTOSHIBA KK·Filed 2008·Granted Jun 7, 2011·9 cites·27 claims
- 2681US10361358B2Spin orbit torque (SOT) MRAM having a source line connected to a spin orbit conductive layer and arranged above a magnetoresistive elementTOSHIBA KK·Filed 2017·Granted Jul 23, 2019·3 cites·10 claims
- 2781US10102894B2Magnetic memoryTOSHIBA KK·Filed 2017·Granted Oct 16, 2018·3 cites·9 claims
- 2881US8134193B2Magneto-resistance effect element and magnetic memoryINOKUCHI TOMOAKI·Filed 2011·Granted Mar 13, 2012·4 cites·3 claims
- 2980US9570137B2Magnetic memory and semiconductor-integrated-circuitTOSHIBA KK·Filed 2016·Granted Feb 14, 2017·5 cites·20 claims
- 3080US9230625B2Magnetic memory, spin element, and spin MOS transistorTOSHIBA KK·Filed 2014·Granted Jan 5, 2016·4 cites·20 claims
- 3180US8335059B2Tunneling magnetoresistive effect element and spin MOS field-effectISHIKAWA MIZUE·Filed 2012·Granted Dec 18, 2012·5 cites·4 claims
- 3279US8779496B2Spin FET, magnetoresistive element and spin memorySAITO YOSHIAKI·Filed 2008·Granted Jul 15, 2014·8 cites·21 claims
- 3379US8243400B2Tunneling magnetoresistive effect element and spin MOS field-effect transistorISHIKAWA MIZUE·Filed 2008·Granted Aug 14, 2012·7 cites·3 claims
- 3476US10068946B2Magnetic memoryTOSHIBA KK·Filed 2016·Granted Sep 4, 2018·4 cites·26 claims
- 3574US8330196B2Semiconductor device and method of manufacturing the sameMARUKAME TAKAO·Filed 2012·Granted Dec 11, 2012·4 cites·20 claims
- 3673US8576601B2Content addressable memoryMARUKAME TAKAO·Filed 2012·Granted Nov 5, 2013·5 cites·18 claims
- 3773US7511991B2Spin-injection magnetic random access memoryTOSHIBA KK·Filed 2007·Granted Mar 31, 2009·7 cites·12 claims
- 3870US10109334B2Magnetic memoryTOSHIBA KK·Filed 2017·Granted Oct 23, 2018·2 cites·20 claims
- 3970US9112131B2Spin MOSFET and reconfigurable logic circuitTOSHIBA KK·Filed 2013·Granted Aug 18, 2015·1 cites·8 claims
- 4070US8681033B2Analog-to-digital converter including differential pair circuitMARUKAME TAKAO·Filed 2012·Granted Mar 25, 2014·4 cites·9 claims
- 4170US7977719B2Magneto-resistance effect element and magnetic memoryTOSHIBA KK·Filed 2009·Granted Jul 12, 2011·3 cites·21 claims
- 4269US10529399B2Magnetic memory deviceTOSHIBA KK·Filed 2018·Granted Jan 7, 2020·2 cites·10 claims
- 4369US9985201B2Magnetic memory based on spin hall effectTOSHIBA KK·Filed 2017·Granted May 29, 2018·1 cites·25 claims
- 4469US8681034B2Analog-to-digital converter for dividing reference voltage using plural variable resistorsMARUKAME TAKAO·Filed 2012·Granted Mar 25, 2014·2 cites·7 claims
- 4568US10490736B2Magnetic memoryTOSHIBA KK·Filed 2018·Granted Nov 26, 2019·2 cites·17 claims
- 4668US7796423B2Reconfigurable logic circuitTOSHIBA KK·Filed 2008·Granted Sep 14, 2010·5 cites·16 claims
- 4766US8487359B2Spin MOSFET and reconfigurable logic circuit using the spin MOSFETSAITO YOSHIAKI·Filed 2009·Granted Jul 16, 2013·3 cites·20 claims
- 4864US7812383B2Spin memory and spin FETTOSHIBA KK·Filed 2007·Granted Oct 12, 2010·2 cites·8 claims
- 4964US7652913B2Magnetoresistance effect element and magnetic memoryTOSHIBA KK·Filed 2006·Granted Jan 26, 2010·7 cites·10 claims
- 5063US2025234627A1Semiconductor deviceTOSHIBA KK·Filed 2024·Application pending·0 cites
Showing the top 50 of 118 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →