Inventor · disambiguated record
Toshikazu Inoue
Also filed as: INOUE TOSHIKAZU
6 granted patents·5 pending applications·172 citations·filing 1990–2023
85Inventor score
Top patents by PatentIndex Score
11 records- 0182US5144379ASemiconductor device having a group iii-v epitaxial semiconductor layer on a substrateFUJITSU LTD·Filed 1991·Granted Sep 1, 1992·87 cites·9 claims
- 0271US5252173AProcess for growing semiconductor layer on substrateFUJITSU LTD·Filed 1991·Granted Oct 12, 1993·23 cites·12 claims
- 0361US5019874ASemiconductor device having an epitaxial layer grown heteroepitaxially on an underlying substrateFUJITSU LTD·Filed 1990·Granted May 28, 1991·35 cites·11 claims
- 0460US2025154240A1Anti-human cxcl1 antibodyCHIOME BIOSCIENCE INC·Filed 2023·Application pending·0 cites
- 0558US2025326862A1Antibody or Fragment Thereof Binding Specifically to Mertk, and Anti-Tumor AgentCHIOME BIOSCIENCE INC·Filed 2022·Application pending·0 cites
- 0650US7599376B2Converter and communication control methodFUJITSU LTD·Filed 2005·Granted Oct 6, 2009·1 cites·3 claims
- 0743US2009041031A1Converter and communication control methodFUJITSU LTD·Filed 2008·Application pending·0 cites
- 0841US5134446ASemiconductor device having a buffer structure for eliminating defects from a semiconductor layer grown thereonFUJITSU LTD·Filed 1991·Granted Jul 28, 1992·14 cites·11 claims
- 0940US5057880ASemiconductor device having a heteroepitaxial substrateFUJITSU LTD·Filed 1990·Granted Oct 15, 1991·12 cites·12 claims
- 1034US2016365060A1Display device and production method thereofPANASONIC LIQUID CRYSTAL DISPL·Filed 2016·Application pending·0 cites
- 1123US2002038910A1Semiconductor device and method of manufacturing the sameFiled 1999·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →