Inventor · disambiguated record
Tomoyasu Inoue
Also filed as: INOUE TOMOYASU
5 granted patents·1 pending application·225 citations·filing 1982–2007
83Inventor score
Top patents by PatentIndex Score
6 records- 0194US4498226AMethod for manufacturing three-dimensional semiconductor device by sequential beam epitaxyTOKYO SHIBAURA ELECTRIC CO·Filed 1982·Granted Feb 12, 1985·146 cites·8 claims
- 0278US4472729ARecrystallized three dimensional integrated circuitTOKYO SHIBAURA ELECTRIC CO·Filed 1982·Granted Sep 18, 1984·47 cites·11 claims
- 0352US4662949AMethod of forming a single crystal semiconductor layer from a non-single crystalline material by a shaped energy beamAGENCY IND SCIENCE TECHN·Filed 1985·Granted May 5, 1987·17 cites·32 claims
- 0449US4656054AMethod of manufacturing a semiconductor device involving a capacitorTOSHIBA KK·Filed 1985·Granted Apr 7, 1987·13 cites·13 claims
- 0543US2008128813A1Semiconductor Device and Manufacturing Method ThereofMIZUSHIMA ICHIRO·Filed 2007·Application pending·0 cites
- 0628US4746803AMethod of forming a single crystal semiconductor layer from a non-single-crystalline material and apparatus for forming the sameAGENCY IND SCIENCE TECHN·Filed 1986·Granted May 24, 1988·2 cites·28 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →