Inventor · disambiguated record
Tom J. John
Also filed as: JOHN TOM · JOHN TOM J · JOHN TOM JIBU
19 granted patents·5 pending applications·35 citations·filing 2016–2025
90Inventor score
Top patents by PatentIndex Score
24 records- 0196US10381377B2Elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor and methods of processing silicon nitride-comprising materialsMICRON TECHNOLOGY INC·Filed 2018·Granted Aug 13, 2019·14 cites·14 claims
- 0296US9893083B1Elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor and methods of processing silicon nitride-comprising materialsMICRON TECHNOLOGY INC·Filed 2016·Granted Feb 13, 2018·18 cites·20 claims
- 0388US11482536B2Electronic devices comprising memory pillars and dummy pillars including an oxide material, and related systems and methodsMICRON TECHNOLOGY INC·Filed 2020·Granted Oct 25, 2022·2 cites·37 claims
- 0484US12250821B2Electronic devices including pillars in array regions and non-array regionsMICRON TECHNOLOGY INC·Filed 2023·Granted Mar 11, 2025·0 cites·20 claims
- 0581US2025359058A1Microelectronic devices including cap materials and plugsMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 0679US2025379103A1Microelectronic devices including slot structuresMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 0778US2025203869A1Methods for forming electronic devices including pillars in array regions and non-array regionsMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 0877US12063783B2Memory arrays and methods used in forming a memory array comprising strings of memory cellsLODESTAR LICENSING GROUP LLC·Filed 2023·Granted Aug 13, 2024·0 cites·2 claims
- 0977US2024357820A1Microelectronic devices including slot structures extending through pillar structures, and related memory devicesLODESTAR LICENSING GROUP LLC·Filed 2024·Application pending·0 cites
- 1076US11871575B2Electronic devices including pillars in array regions and non-array regionsMICRON TECHNOLOGY INC·Filed 2022·Granted Jan 9, 2024·0 cites·20 claims
- 1175US12041775B2Electronic devices comprising memory pillars and dummy pillars including an oxide material, and related systems and methodsMICRON TECHNOLOGY INC·Filed 2022·Granted Jul 16, 2024·0 cites·20 claims
- 1271US11626423B2Memory arrays and methods used in forming a memory array comprising strings of memory cellsMICRON TECHNOLOGY INC·Filed 2021·Granted Apr 11, 2023·0 cites·8 claims
- 1370US11600494B2Arrays of elevationally-extending strings of memory cells and methods used in forming an array of elevationally-extending strings of memory cellsMICRON TECHNOLOGY INC·Filed 2021·Granted Mar 7, 2023·0 cites·21 claims
- 1469US12382633B2Microelectronic devices including a selectively removable cap dielectric material, methods of forming the microelectronic devices, and related systemsMICRON TECHNOLOGY INC·Filed 2022·Granted Aug 5, 2025·0 cites·20 claims
- 1568US11037797B2Arrays of elevationally-extending strings of memory cells and methods used in forming an array of elevationally-extending strings of memory cellsMICRON TECHNOLOGY INC·Filed 2020·Granted Jun 15, 2021·0 cites·27 claims
- 1668US10304749B2Method and apparatus for improved etch stop layer or hard mask layer of a memory deviceINTEL CORP·Filed 2017·Granted May 28, 2019·1 cites·13 claims
- 1765US11387245B2Electronic devices including pillars in array regions and non-array regions, and related systems and methodsMICRON TECHNOLOGY INC·Filed 2020·Granted Jul 12, 2022·0 cites·25 claims
- 1864US12406886B2Microelectronic devices including slot structures, and related electronic systems and methods of forming the microelectronic devicesMICRON TECHNOLOGY INC·Filed 2022·Granted Sep 2, 2025·0 cites·25 claims
- 1964US11075219B2Memory arrays and methods used in forming a memory array comprising strings of memory cellsMICRON TECHNOLOGY INC·Filed 2019·Granted Jul 27, 2021·0 cites·20 claims
- 2064US10615174B2Elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor and methods of processing silicon nitride-comprising materialsMICRON TECHNOLOGY INC·Filed 2019·Granted Apr 7, 2020·0 cites·11 claims
- 2161US10665469B2Arrays of elevationally-extending strings of memory cells and methods used in forming an array of elevationally-extending strings of memory cellsMICRON TECHNOLOGY INC·Filed 2018·Granted May 26, 2020·0 cites·26 claims
- 2260US10121799B2Elevationally-extending strings of memory cells individually comprising a programmable charge storage transistor and methods of processing silicon nitride-comprising materialsMICRON TECHNOLOGY INC·Filed 2017·Granted Nov 6, 2018·0 cites·12 claims
- 2351US2023380159A1Memory Arrays Comprising Strings Of Memory Cells And Methods Used In Forming A Memory Array Comprising Strings Of Memory CellsMICRON TECHNOLOGY INC·Filed 2022·Application pending·0 cites
- 2439US10580782B2Methods of forming an array of elevationally-extending strings of memory cells individually comprising a programmable charge-storage transistorMICRON TECHNOLOGY INC·Filed 2018·Granted Mar 3, 2020·0 cites·25 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →