Inventor · disambiguated record
Tomohiro Kawase
Also filed as: KAWASE TOMOHIRO
54 granted patents·33 pending applications·618 citations·filing 1991–2024
98Inventor score
Files withSUMITOMO ELECTRIC INDUSTRIES37SHIMADZU CORP19NINTENDO CO LTD8MATSUSHIMA YOSHIHIRO4UYEMURA C & CO LTD4
Top patents by PatentIndex Score
87 records- 0196US6544126B2Portable game machine with download capabilityNINTENDO CO LTD·Filed 2001·Granted Apr 8, 2003·245 cites·20 claims
- 0294US7220347B2Electrolytic copper plating bath and plating process therewithUYEMURA C & CO LTD·Filed 2005·Granted May 22, 2007·27 cites·20 claims
- 0392US9797068B2Method of producing semiconductor single crystalSAKURADA TAKASHI·Filed 2011·Granted Oct 24, 2017·8 cites·17 claims
- 0492US8913172B2Information processing apparatus and computer-readable storage medium recording information processing programMATSUSHIMA YOSHIHIRO·Filed 2011·Granted Dec 16, 2014·10 cites·7 claims
- 0592US8848100B2Information processing device, information processing system, and launch program and storage medium storing the same providing photographing functionalityKUWAHARA MASATO·Filed 2008·Granted Sep 30, 2014·23 cites·20 claims
- 0690US8149315B2System and method for changing display of an image during a changed state of electronic deviceMATSUSHIMA YOSHIHIRO·Filed 2008·Granted Apr 3, 2012·11 cites·14 claims
- 0787US8197583B2Electroless plating solution, method for electroless plating using the same and method for manufacturing circuit boardHOTTA TERUYUKI·Filed 2011·Granted Jun 12, 2012·4 cites·4 claims
- 0887US7115031B2Game system displaying a game world on a common display and an individual displayNINTENDO CO LTD·Filed 2002·Granted Oct 3, 2006·69 cites·37 claims
- 0986US7998847B2III-nitride crystal manufacturing method, III-nitride crystal substrate, and III-nitride semiconductor deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2007·Granted Aug 16, 2011·9 cites·9 claims
- 1083US9256449B2Menu screen for information processing apparatus and computer-readable storage medium recording information processing programNINTENDO CO LTD·Filed 2014·Granted Feb 9, 2016·3 cites·3 claims
- 1182US9290860B2Method of manufacturing silicon carbide single crystal and silicon carbide single crystal substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Mar 22, 2016·1 cites·9 claims
- 1278US8276093B2Computer-readable storage medium having object display order changing program stored therein and apparatusMATSUSHIMA YOSHIHIRO·Filed 2009·Granted Sep 25, 2012·9 cites·10 claims
- 1377US11017913B2Crystal and substrate of conductive GaAs, and method for forming the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2018·Granted May 25, 2021·0 cites·3 claims
- 1477US7988842B2Continuous copper electroplating methodUYEMURA C & CO LTD·Filed 2008·Granted Aug 2, 2011·2 cites·4 claims
- 1576US11955251B2Crystal and substrate of conductive GaAs, and method for forming the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 2021·Granted Apr 9, 2024·0 cites·13 claims
- 1676US8310030B2III-nitride crystal substrate and III-nitride semiconductor deviceHIROTA RYU·Filed 2011·Granted Nov 13, 2012·4 cites·10 claims
- 1776US5290395AMethod of and apparatus for preparing single crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 1991·Granted Mar 1, 1994·36 cites·20 claims
- 1875US8361226B2III-nitride single-crystal growth methodSUMITOMO ELECTRIC INDUSTRIES·Filed 2007·Granted Jan 29, 2013·2 cites·10 claims
- 1975US7892411B2Electrolytic copper plating processUYEMURA C & CO LTD·Filed 2008·Granted Feb 22, 2011·1 cites·4 claims
- 2075US6572700B2Semiconductor crystal, and method and apparatus of production thereofSUMITOMO ELECTRIC INDUSTRIES·Filed 2001·Granted Jun 3, 2003·10 cites·35 claims
- 2173US6007622AMethod of preparing group III-V compound semiconductor crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 1997·Granted Dec 28, 1999·21 cites·22 claims
- 2272US9116721B2Object display order changing program and apparatusMATSUSHIMA YOSHIHIRO·Filed 2008·Granted Aug 25, 2015·6 cites·22 claims
- 2372US2013312878A1CRYSTAL AND SUBSTRATE OF CONDUCTIVE GaAs, AND METHOD FOR FORMING THE SAMESUMITOMO ELECTRIC INDUSTRIES·Filed 2013·Application pending·0 cites
- 2471US9460901B2Data-processing system for chromatograph mass spectrometrySHIMADZU CORP·Filed 2013·Granted Oct 4, 2016·2 cites·9 claims
- 2570US10533265B2Growth containerSUMITOMO ELECTRIC INDUSTRIES·Filed 2017·Granted Jan 14, 2020·0 cites·3 claims
- 2670US6866714B2Large size semiconductor crystal with low dislocation densitySUMITOMO ELECTRIC INDUSTRIES·Filed 2003·Granted Mar 15, 2005·10 cites·14 claims
- 2768US10427324B2Silicon carbide ingot and method for manufacturing silicon carbide substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Oct 1, 2019·1 cites·9 claims
- 2868US9546437B2Ingot, silicon carbide substrate, and method for producing ingotSUMITOMO ELECTRIC INDUSTRIES·Filed 2014·Granted Jan 17, 2017·2 cites·7 claims
- 2968US2025044265A1Data analysis system and computer programSHIMADZU CORP·Filed 2024·Application pending·0 cites
- 3067US9799735B2Method of manufacturing silicon carbide single crystal and silicon carbide single crystal substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2016·Granted Oct 24, 2017·0 cites·2 claims
- 3167US8679317B2Copper electroplating bathISONO TOSHIHISA·Filed 2007·Granted Mar 25, 2014·3 cites·6 claims
- 3266US5830269AMethod of preparing group II-VI or III-V compound single crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 1996·Granted Nov 3, 1998·20 cites·48 claims
- 3365US8137447B2Electroless plating solution, method for electroless plating using the same and method for manufacturing circuit boardHOTTA TERUYUKI·Filed 2009·Granted Mar 20, 2012·0 cites·8 claims
- 3465USRE42279EMethod of preparing a compound semiconductor crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2008·Granted Apr 12, 2011·0 cites·52 claims
- 3565US7442355B2Indium phosphide substrate and indium phosphide monocrystal and method of manufacturing thereofSUMITOMO ELECTRIC INDUSTRIES·Filed 2004·Granted Oct 28, 2008·5 cites·33 claims
- 3665US7025677B2Game emulator programNINTENDO CO LTD·Filed 2003·Granted Apr 11, 2006·10 cites·16 claims
- 3764US5584929AMethod for preparing compound semiconductor crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 1995·Granted Dec 17, 1996·27 cites·45 claims
- 3864US2024175850A1Data processing systemSHIMADZU CORP·Filed 2023·Application pending·0 cites
- 3964US2025067709A1Setting method and setting deviceSHIMADZU CORP·Filed 2024·Application pending·0 cites
- 4063USRE40662EMethod of preparing a compound semiconductor crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2003·Granted Mar 17, 2009·3 cites·72 claims
- 4161US2023115703A1Analysis assistance device, analysis assistance method and non-transitory computer readable medium storing analysis assistance programSHIMADZU CORP·Filed 2022·Application pending·0 cites
- 4260US8698282B2Group III nitride semiconductor crystal substrate and semiconductor deviceOKAHISA TAKUJI·Filed 2008·Granted Apr 15, 2014·0 cites·12 claims
- 4360US2023081970A1Data analysis system, data analysis method, and computer programSHIMADZU CORP·Filed 2022·Application pending·0 cites
- 4460US2022412929A1Data processing system for chromatographSHIMADZU CORP·Filed 2022·Application pending·0 cites
- 4559US5656077ACrucible for preparing compound semiconductor crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 1995·Granted Aug 12, 1997·20 cites·20 claims
- 4659US2023094950A1Method and program for assisting development of analysis procedureSHIMADZU CORP·Filed 2022·Application pending·0 cites
- 4758US6485563B2Method of preparing a compound semiconductor crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2001·Granted Nov 26, 2002·2 cites·42 claims
- 4858US2011274879A1CRYSTAL AND SUBSTRATE OF CONDUCTIVE GaAs, AND METHOD FOR FORMING THE SAMESUMITOMO ELECTRIC INDUSTRIES·Filed 2010·Application pending·0 cites
- 4957US10437424B2Information processing apparatus and computer-readable storage medium recording information processing programNINTENDO CO LTD·Filed 2015·Granted Oct 8, 2019·0 cites·15 claims
- 5057USRE41551EMethod of preparing group III-V compound semiconductor crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 2005·Granted Aug 24, 2010·0 cites·41 claims
Showing the top 50 of 87 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →