Inventor · disambiguated record
Toshihiro Kotani
Also filed as: KOTANI TOSHIHIRO
12 granted patents·95 citations·filing 1983–2010
90Inventor score
Top patents by PatentIndex Score
12 records- 0170US4528061AProcess for manufacturing boron-doped gallium arsenide single crystalNIPPON TELEGRAPH & TELEPHONE·Filed 1983·Granted Jul 9, 1985·16 cites·7 claims
- 0268US4944834AProcess of pulling a crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 1988·Granted Jul 31, 1990·18 cites·6 claims
- 0366US4863554AProcess for pulling a single crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 1987·Granted Sep 5, 1989·17 cites·1 claims
- 0455US5524571AMethod for synthesizing compound semiconductor polycrystals and apparatus thereforSUMITOMO ELECTRIC INDUSTRIES·Filed 1990·Granted Jun 11, 1996·11 cites·4 claims
- 0551US8253162B2GaN substrate and light-emitting deviceFUJIWARA SHINSUKE·Filed 2010·Granted Aug 28, 2012·0 cites·4 claims
- 0647US4613486ASemiconductor boule pulling rodSUMITOMO ELECTRIC INDUSTRIES·Filed 1984·Granted Sep 23, 1986·10 cites·8 claims
- 0742US5521148AOxide superconducting material, process for preparing the same and applications thereofSUMITOMO ELECTRIC INDUSTRIES·Filed 1991·Granted May 28, 1996·7 cites·8 claims
- 0839US4537652AProcess for preparing single crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 1984·Granted Aug 27, 1985·3 cites·2 claims
- 0936US4678534AMethod for growing a single crystalSUMITOMO ELECTRIC INDUSTRIES·Filed 1985·Granted Jul 7, 1987·5 cites·4 claims
- 1034US4873062AApparatus for the growth of single crystalsSUMITOMO ELECTRIC INDUSTRIES·Filed 1984·Granted Oct 10, 1989·4 cites·7 claims
- 1134US4684515ASingle crystal articleSUMITOMO ELECTRIC INDUSTRIES·Filed 1985·Granted Aug 4, 1987·3 cites·2 claims
- 1229US5849672AOxide superconducting material, process for preparing the same and applications thereofSUMITOMO ELECTRIC INDUSTRIES·Filed 1995·Granted Dec 15, 1998·1 cites·10 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →