Inventor · disambiguated record
Tomoko Matsuda
Also filed as: MATSUDA TOMOKO
8 granted patents·12 pending applications·17 citations·filing 1999–2023
79Inventor score
Files withNEC ELECTRONICS CORP7NEC CORP6DAIICHI SANKYO CO LTD2MATSUDA TOMOKO1RENESAS ELECTRONICS CORP1
Top patents by PatentIndex Score
20 records- 0164US2025195270A1Non-magnetic fine stainless steel processed product and method for manufacturing the sameTERAKATA MFG CO LTD·Filed 2023·Application pending·0 cites
- 0263US8058695B2Semiconductor deviceMATSUDA TOMOKO·Filed 2011·Granted Nov 15, 2011·2 cites·6 claims
- 0362US7348273B2Method of manufacturing a semiconductor deviceNEC ELECTRONICS CORP·Filed 2005·Granted Mar 25, 2008·3 cites·4 claims
- 0453US6423602B2Circuit manufacturing method and apparatus, anneal control method and apparatus, information storage mediumNEC CORP·Filed 2001·Granted Jul 23, 2002·5 cites·12 claims
- 0550US2022356557A1Fe-pt-bn-based sputtering target and method for manufacturing sameTANAKA PRECIOUS METAL IND·Filed 2020·Application pending·0 cites
- 0647US7879722B2Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2007·Granted Feb 1, 2011·0 cites·10 claims
- 0747US2010055855A1Method of preventing sliding in manufacturing semiconductur deviceNEC ELECTRONICS CORP·Filed 2009·Application pending·0 cites
- 0843US2008102589A1Method of manufacturing semiconductor deviceNEC ELECTRONICS CORP·Filed 2007·Application pending·0 cites
- 0941US7585771B2Method of manufacturing semiconductor deviceNEC ELECTRONICS CORP·Filed 2006·Granted Sep 8, 2009·0 cites·8 claims
- 1041US2010078706A1Nonvolatile semiconductor memory device and method of manufacturing nonvolatile semiconductor memory deviceNEC ELECTRONICS CORP·Filed 2009·Application pending·0 cites
- 1141US2013184308A1ACTIVATED BLOOD COAGULATION FACTOR X (FXa) INHIBITORDAIICHI SANKYO CO LTD·Filed 2013·Application pending·0 cites
- 1240US7501317B2Method of manufacturing semiconductor deviceNEC ELECTRONICS CORP·Filed 2006·Granted Mar 10, 2009·0 cites·11 claims
- 1339US2006163668A1Semiconductor device and method for manufacturing sameNEC ELECTRONICS CORP·Filed 2006·Application pending·0 cites
- 1438US2011275666A1Activated blood coagulation factor x (fxa) inhibitorDAIICHI SANKYO CO LTD·Filed 2011·Application pending·0 cites
- 1535US6319734B1Method for establishing differential injection conditions in mosfet source/drain regions based on determining the permitted amount of energy contamination with respect to desired junction depthNEC CORP·Filed 1999·Granted Nov 20, 2001·7 cites·6 claims
- 1634US2004043572A1Semiconductor device manufacturing methodFiled 2003·Application pending·0 cites
- 1733US6465333B2Method of manufacturing a circuitNEC CORP·Filed 2001·Granted Oct 15, 2002·0 cites·4 claims
- 1832US2002006693A1Semiconductor device and the manufacturing method thereofNEC CORP·Filed 2001·Application pending·0 cites
- 1930US2003011029A1Method for manufacturing a mosfet having deep SD regions and SD extension regionsNEC CORP·Filed 2002·Application pending·0 cites
- 2029US2001034095A1Method of forming n-channel and p-channel MOS field effect transistors over a single semiconductor substrateNEC CORP·Filed 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →