Inventor · disambiguated record
Toshihide Nabatame
Also filed as: NABATAME TOSHIHIDE
41 granted patents·21 pending applications·556 citations·filing 1987–2018
98Inventor score
Files withRENESAS TECH CORP17HITACHI LTD14NABATAME TOSHIHIDE5NAT INST MATERIALS SCIENCE5ROHM CO LTD5
Top patents by PatentIndex Score
62 records- 0193US4848983ACatalytic coal gasification by utilizing chloridesUNIV TOHOKU·Filed 1987·Granted Jul 18, 1989·85 cites·3 claims
- 0291US6743739B2Fabrication method for semiconductor integrated devicesRENESAS TECH CORP·Filed 2002·Granted Jun 1, 2004·47 cites·11 claims
- 0388US6198119B1Ferroelectric element and method of producing the sameHITACHI LTD·Filed 1997·Granted Mar 6, 2001·94 cites·49 claims
- 0486US7586755B2Electronic circuit componentHITACHI LTD·Filed 2007·Granted Sep 8, 2009·11 cites·7 claims
- 0584US6777248B1Dielectric element and manufacturing method thereforHITACHI LTD·Filed 1997·Granted Aug 17, 2004·70 cites·7 claims
- 0683US6503791B2Method of manufacturing semiconductor devices utilizing underlayer-dependency of deposition of capacitor electrode film, and semiconductor deviceHITACHI LTD·Filed 2001·Granted Jan 7, 2003·21 cites·16 claims
- 0782US11486843B2Dryness/wetness responsive sensorNAT INST MATERIALS SCIENCE·Filed 2018·Granted Nov 1, 2022·2 cites·10 claims
- 0881US6555429B2Method of manufacturing semiconductor devices utilizing underlayer-dependency of deposition of capacitor electrode film, and semiconductor deviceHITACHI LTD·Filed 2001·Granted Apr 29, 2003·19 cites·6 claims
- 0978US7323381B2Semiconductor device and manufacturing method thereofRENESAS TECH CORP·Filed 2005·Granted Jan 29, 2008·8 cites·12 claims
- 1077US9825180B2Thin-film transistor and method for manufacturing sameNAT INST MATERIALS SCIENCE·Filed 2016·Granted Nov 21, 2017·2 cites·4 claims
- 1177US9741864B2Thin-film transistor and method for manufacturing sameNAT INST FOR MATERIALS SCIENCE·Filed 2014·Granted Aug 22, 2017·3 cites·14 claims
- 1274US8575038B2Method for reducing thickness of interfacial layer, method for forming high dielectric constant gate insulating film, high dielectric constant gate insulating film, high dielectric constant gate oxide film, and transistor having high dielectric constant gate oxide filmUMEZAWA NAOTO·Filed 2012·Granted Nov 5, 2013·4 cites·10 claims
- 1374US8168547B2Manufacturing method of semiconductor deviceNABATAME TOSHIHIDE·Filed 2010·Granted May 1, 2012·3 cites·15 claims
- 1474US7372112B2Semiconductor device, process for producing the same and process for producing metal compound thin filmROHM CO LTD·Filed 2005·Granted May 13, 2008·5 cites·4 claims
- 1574US6992022B2Fabrication method for semiconductor integrated devicesRENESAS TECH CORP·Filed 2004·Granted Jan 31, 2006·14 cites·8 claims
- 1673US7772678B2Metallic compound thin film that contains high-k dielectric metal, nitrogen, and oxygenROHM CO LTD·Filed 2008·Granted Aug 10, 2010·4 cites·2 claims
- 1773US7387686B2Film formation apparatusROHM CO LTD·Filed 2004·Granted Jun 17, 2008·16 cites·9 claims
- 1873US6483143B2Semiconductor device having a capacitor structure including a self-alignment deposition preventing filmHITACHI LTD·Filed 2001·Granted Nov 19, 2002·11 cites·2 claims
- 1971US7618855B2Manufacturing method of semiconductor deviceRENESAS TECH CORP·Filed 2006·Granted Nov 17, 2009·5 cites·10 claims
- 2070US7419920B2Metal thin film and semiconductor comprising a metal thin filmHORIBA LTD·Filed 2005·Granted Sep 2, 2008·3 cites·4 claims
- 2168US8207584B2Semiconductor device and manufacturing method of the sameNABATAME TOSHIHIDE·Filed 2008·Granted Jun 26, 2012·4 cites·8 claims
- 2268US7790627B2Semiconductor device, method of manufacturing the same, and method of manufacturing metal compound thin filmROHM CO LTD·Filed 2007·Granted Sep 7, 2010·3 cites·5 claims
- 2366US6521494B2Method of manufacturing semiconductor devices utilizing underlayer-dependency of deposition of capacitor electrode film, and semiconductor deviceHITACHI LTD·Filed 2002·Granted Feb 18, 2003·7 cites·6 claims
- 2466US5849670AThallium group superconducting wireHITACHI LTD·Filed 1995·Granted Dec 15, 1998·26 cites·20 claims
- 2564US8759925B2Method for reducing thickness of interfacial layer, method for forming high dielectric constant gate insulating film, high dielectric constant gate insulating film, high dielectric constant gate oxide film, and transistor having high dielectric constant gate oxide filmNAT INST FOR MATERIALS SCIENCE·Filed 2013·Granted Jun 24, 2014·1 cites·5 claims
- 2662US7202539B2Semiconductor device having misfet gate electrodes with and without GE or impurity and manufacturing method thereofRENESAS TECH CORP·Filed 2005·Granted Apr 10, 2007·2 cites·2 claims
- 2761US7294905B2Thin film capacitor and electronic circuit componentHITACHI LTD·Filed 2002·Granted Nov 13, 2007·10 cites·15 claims
- 2860US7259058B2Fabricating method of semiconductor integrated circuitsRENESAS TECHONOLOGY CORP·Filed 2001·Granted Aug 21, 2007·8 cites·29 claims
- 2960US2019145920A1DRYNESS/WETNESS RESPONSIVE SENSOR HAVING FIRST AND SECOND WIRES SPACED 5 nm TO LESS THAN 20 um APARTNAT INST MATERIALS SCIENCE·Filed 2018·Application pending·0 cites
- 3058US6483167B1Semiconductor device and production method thereofHITACHI LTD·Filed 2000·Granted Nov 19, 2002·9 cites·3 claims
- 3157US7820503B2Semiconductor device and manufacturing method of the sameRENESAS ELECTRONICS CORP·Filed 2008·Granted Oct 26, 2010·1 cites·6 claims
- 3257US7511338B2Semiconductor device and manufacturing method of the sameRENESAS TECH CORP·Filed 2006·Granted Mar 31, 2009·1 cites·6 claims
- 3357US7482234B2Method of fabricating a metal oxynitride thin film that includes a first annealing of a metal oxide film in a nitrogen-containing atmosphere to form a metal oxynitride film and a second annealing of the metal oxynitride film in an oxidizing atmosphereROHM CO LTD·Filed 2004·Granted Jan 27, 2009·6 cites·4 claims
- 3456US7397094B2Semiconductor device and manufacturing method thereofRENESAS TECH CORP·Filed 2005·Granted Jul 8, 2008·1 cites·16 claims
- 3556US5318948AOxide superconductor, superconducting wire and coil using the same and method of production thereofHITACHI LTD·Filed 1992·Granted Jun 7, 1994·18 cites·23 claims
- 3655US10267756B2Dryness/wetness responsive sensor having first and second wires spaced 5 nm to less than 20 μm apartNAT INST MATERIALS SCIENCE·Filed 2015·Granted Apr 23, 2019·0 cites·19 claims
- 3755US6548342B1Method of producing oxide dielectric element, and memory and semiconductor device using the elementHITACHI LTD·Filed 1997·Granted Apr 15, 2003·19 cites·11 claims
- 3854US7071053B2Method of forming capacitor with ruthenium top and bottom electrodes by MOCVDHITACHI LTD·Filed 2004·Granted Jul 4, 2006·1 cites·6 claims
- 3954US2009011608A1Manufacturing method of semiconductor deviceRENESAS TECH CORP·Filed 2008·Application pending·0 cites
- 4049US6989304B1Method for manufacturing a ruthenium film for a semiconductor deviceRENESAS TECH CORP·Filed 2000·Granted Jan 24, 2006·3 cites·20 claims
- 4149US6917065B2Ferroelectric capacitor and semiconductor deviceRENESAS TECH CORP·Filed 2003·Granted Jul 12, 2005·3 cites·17 claims
- 4247US10290802B2Variable resistance device and method for manufacturing sameNAT INST MATERIALS SCIENCE·Filed 2016·Granted May 14, 2019·0 cites·5 claims
- 4346US2016056409A1Organic el element and method for manufacturing sameNAT INST FOR MATERIALS SCIENCE·Filed 2014·Application pending·0 cites
- 4445US2007257320A1Semiconductor device and manufacturing method thereofNABATAME TOSHIHIDE·Filed 2007·Application pending·0 cites
- 4545US2008026148A1Film Forming System And Method For Forming FilmTOMINAGA KOJI·Filed 2004·Application pending·0 cites
- 4643US2008283929A1Semiconductor device and manufacturing method of the sameRENESAS TECH CORP·Filed 2008·Application pending·0 cites
- 4743US2006214207A1Semiconductor device and manufacturing method thereofNABATAME TOSHIHIDE·Filed 2006·Application pending·0 cites
- 4842US2007054503A1Film forming method and fabrication process of semiconductor deviceRENESAS TECH CORP·Filed 2006·Application pending·0 cites
- 4941US2007221970A1Manufacturing method of semiconductor device and semiconductor deviceRENESAS TECH CORP·Filed 2007·Application pending·0 cites
- 5041US2007218624A1Semiconductor device and method of manufacturing the sameRENESAS TECH CORP·Filed 2007·Application pending·0 cites
Showing the top 50 of 62 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →