Inventor · disambiguated record
Toshifumi Nishiguchi
Also filed as: NISHIGUCHI TOSHIFUMI
21 granted patents·9 pending applications·42 citations·filing 2012–2025
91Inventor score
Top patents by PatentIndex Score
30 records- 0193US9716009B2Power semiconductor device with electrode having trench structureTOSHIBA KK·Filed 2015·Granted Jul 25, 2017·10 cites·5 claims
- 0289US11824112B2Semiconductor deviceTOSHIBA KK·Filed 2022·Granted Nov 21, 2023·1 cites·9 claims
- 0389US9947751B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2017·Granted Apr 17, 2018·6 cites·6 claims
- 0486US10453930B2Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2017·Granted Oct 22, 2019·5 cites·14 claims
- 0584US10319850B2Semiconductor device and manufacturing method of semiconductor deviceTOSHIBA KK·Filed 2018·Granted Jun 11, 2019·4 cites·13 claims
- 0684US9337283B2Semiconductor device with field plateTOSHIBA KK·Filed 2013·Granted May 10, 2016·8 cites·10 claims
- 0782US10840368B2Semiconductor deviceTOSHIBA KK·Filed 2019·Granted Nov 17, 2020·3 cites·7 claims
- 0879US9842924B2Semiconductor device having an electrode that is in a peripheral trench region and at a same potential as a source electrodeTOSHIBA KK·Filed 2016·Granted Dec 12, 2017·3 cites·11 claims
- 0970US10522620B2Semiconductor device having a varying length conductive portion between semiconductor regionsTOSHIBA KK·Filed 2018·Granted Dec 31, 2019·1 cites·11 claims
- 1069US11018251B2Semiconductor deviceTOSHIBA KK·Filed 2019·Granted May 25, 2021·1 cites·5 claims
- 1163US11996458B2Trench-gate MOS transistor and method for manufacturing the sameTOSHIBA KK·Filed 2022·Granted May 28, 2024·0 cites·14 claims
- 1263US2025386577A1Semiconductor deviceTOSHIBA KK·Filed 2024·Application pending·0 cites
- 1360US2025063796A1Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2024·Application pending·0 cites
- 1459US11251278B2Trench-gate MOS transistor and method for manufacturingTOSHIBA KK·Filed 2020·Granted Feb 15, 2022·0 cites·12 claims
- 1559US2025393294A1Semiconductor DeviceTOSHIBA KK·Filed 2024·Application pending·0 cites
- 1658US11430884B2Semiconductor deviceTOSHIBA KK·Filed 2020·Granted Aug 30, 2022·0 cites·14 claims
- 1752US11011609B2Method of manufacturing a semiconductor deviceTOSHIBA KK·Filed 2018·Granted May 18, 2021·0 cites·16 claims
- 1850US11876132B2Semiconductor deviceTOSHIBA KK·Filed 2021·Granted Jan 16, 2024·0 cites·7 claims
- 1950US11862698B2Semiconductor device and method of manufacturing semiconductor deviceTOSHIBA KK·Filed 2021·Granted Jan 2, 2024·0 cites·12 claims
- 2050US11640991B2Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2021·Granted May 2, 2023·0 cites·14 claims
- 2149US2024096972A1Semiconductor deviceTOSHIBA KK·Filed 2023·Application pending·0 cites
- 2247US11462637B2Semiconductor device and manufacturing method for the sameTOSHIBA KK·Filed 2021·Granted Oct 4, 2022·0 cites·9 claims
- 2347US11430885B2Semiconductor deviceTOSHIBA KK·Filed 2021·Granted Aug 30, 2022·0 cites·8 claims
- 2447US9099435B2Method of manufacturing semiconductor deviceTOSHIBA KK·Filed 2014·Granted Aug 4, 2015·0 cites·18 claims
- 2547US2025386542A1Semiconductor deviceTOSHIBA KK·Filed 2025·Application pending·0 cites
- 2643US10971621B2Semiconductor deviceTOSHIBA KK·Filed 2019·Granted Apr 6, 2021·0 cites·14 claims
- 2743US2015263162A1Semiconductor deviceTOSHIBA KK·Filed 2014·Application pending·0 cites
- 2842US2020295150A1Semiconductor deviceTOSHIBA KK·Filed 2019·Application pending·0 cites
- 2940US2014035030A1Semiconductor deviceTOSHIBA KK·Filed 2013·Application pending·0 cites
- 3039US2013277734A1Semiconductor device and method for manufacturing sameNISHIGUCHI TOSHIFUMI·Filed 2012·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →