Inventor · disambiguated record
Toshiyuki Oie
Also filed as: OIE Toshiyuki
14 granted patents·6 pending applications·19 citations·filing 2013–2023
86Inventor score
Files withMITSUBISHI GAS CHEMICAL CO20
Top patents by PatentIndex Score
20 records- 0191US10035978B2Semiconductor element cleaning liquid and cleaning methodMITSUBISHI GAS CHEMICAL CO·Filed 2015·Granted Jul 31, 2018·9 cites·12 claims
- 0278US9422512B2Cleaning liquid for semiconductor elements and cleaning method using sameMITSUBISHI GAS CHEMICAL CO·Filed 2013·Granted Aug 23, 2016·4 cites·9 claims
- 0376US10629426B2Semiconductor element cleaning solution that suppresses damage to cobalt, and method for cleaning semiconductor element using sameMITSUBISHI GAS CHEMICAL CO·Filed 2015·Granted Apr 21, 2020·2 cites·17 claims
- 0476US10377978B2Alkaline earth metal-containing cleaning solution for cleaning semiconductor element, and method for cleaning semiconductor element using sameMITSUBISHI GAS CHEMICAL CO·Filed 2015·Granted Aug 13, 2019·2 cites·11 claims
- 0570US10689573B2Wet etching composition for substrate having SiN layer and Si layer and wet etching method using sameMITSUBISHI GAS CHEMICAL CO·Filed 2017·Granted Jun 23, 2020·1 cites·10 claims
- 0664US10651028B2Semiconductor element cleaning solution that suppresses damage to tungsten-containing materials, and method for cleaning semiconductor element using sameMITSUBISHI GAS CHEMICAL CO·Filed 2015·Granted May 12, 2020·1 cites·10 claims
- 0755US2025207265A1Composition for protecting copper surface, and method for producing semiconductor intermediate and semiconductor using sameMITSUBISHI GAS CHEMICAL CO·Filed 2023·Application pending·0 cites
- 0854US2025154410A1Composition, and semiconductor substrate manufacturing method and etching method using sameMITSUBISHI GAS CHEMICAL CO·Filed 2023·Application pending·0 cites
- 0952US11479744B2Composition having suppressed alumina damage and production method for semiconductor substrate using sameMITSUBISHI GAS CHEMICAL CO·Filed 2019·Granted Oct 25, 2022·0 cites·18 claims
- 1048US11352593B2Aqueous composition and cleaning method using sameMITSUBISHI GAS CHEMICAL CO·Filed 2019·Granted Jun 7, 2022·0 cites·18 claims
- 1148US2024047224A1Recess etching solution, recess etching method, and surface-treated semiconductor substrate manufacturing methodMITSUBISHI GAS CHEMICAL CO·Filed 2021·Application pending·0 cites
- 1247US2024170278A1Method for producing semiconductor substrate for memory elementsMITSUBISHI GAS CHEMICAL CO·Filed 2022·Application pending·0 cites
- 1346US12338381B2Protective fluid for alumina, protection method, and production method for semiconductor substrate having alumina layer using sameMITSUBISHI GAS CHEMICAL CO·Filed 2019·Granted Jun 24, 2025·0 cites·20 claims
- 1446US11193094B2Liquid composition for reducing damage of cobalt, alumina, interlayer insulating film and silicon nitride, and washing method using sameMITSUBISHI GAS CHEMICAL CO·Filed 2018·Granted Dec 7, 2021·0 cites·10 claims
- 1546US2024117277A1Composition for cleaning semiconductor substrate, method for cleaning semiconductor substrate, and method for producing semiconductor substrateMITSUBISHI GAS CHEMICAL CO·Filed 2022·Application pending·0 cites
- 1645US2024287385A1Etching composition for semiconductor substrate for memory element and method for manufacturing semiconductor substrate for memory element using sameMITSUBISHI GAS CHEMICAL CO·Filed 2022·Application pending·0 cites
- 1744US10160938B2Semiconductor element cleaning solution that suppresses damage to tantalum-containing materials, and cleaning method using sameMITSUBISHI GAS CHEMICAL CO·Filed 2015·Granted Dec 25, 2018·0 cites·16 claims
- 1843US11629315B2Aqueous composition and cleaning method using sameMITSUBISHI GAS CHEMICAL CO·Filed 2019·Granted Apr 18, 2023·0 cites·14 claims
- 1943US10538718B2Cleaning solution and cleaning method for material comprising carbon-incorporated silicon oxide for use in recycling waferMITSUBISHI GAS CHEMICAL CO·Filed 2016·Granted Jan 21, 2020·0 cites·6 claims
- 2041US11613720B2Aqueous composition and cleaning method using sameMITSUBISHI GAS CHEMICAL CO·Filed 2019·Granted Mar 28, 2023·0 cites·20 claims
Join the waitlist — get patent alerts
Get an alert when Toshiyuki Oie files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →