Inventor · disambiguated record
Toshiyuki Oishi
Also filed as: OISHI TOSHIYUKI
26 granted patents·9 pending applications·684 citations·filing 1989–2012
96Inventor score
Top patents by PatentIndex Score
35 records- 0195US5622567AThin film forming apparatus using laserMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Apr 22, 1997·147 cites·3 claims
- 0294US6566734B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2001·Granted May 20, 2003·102 cites·7 claims
- 0388US8035130B2Nitride semiconductor heterojunction field effect transistor having wide band gap barrier layer that includes high concentration impurity regionMITSUBISHI ELECTRIC CORP·Filed 2008·Granted Oct 11, 2011·16 cites·9 claims
- 0488US6633070B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Oct 14, 2003·44 cites·10 claims
- 0588US6110291AThin film forming apparatus using laserMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Aug 29, 2000·67 cites·3 claims
- 0683US6245641B1Semiconductor device comprising trench isolation insulator film and method of fabricating the sameMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Jun 12, 2001·68 cites·9 claims
- 0783US5020072ASemiconductor laser deviceMITSUBISHI ELECTRIC CORP·Filed 1989·Granted May 28, 1991·32 cites·11 claims
- 0882US9111061B2Transistor characteristic calculation apparatus using large signal equivalent circuit modelOTSUKA HIROSHI·Filed 2012·Granted Aug 18, 2015·7 cites·5 claims
- 0982US6335252B1Semiconductor device manufacturing methodMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Jan 1, 2002·31 cites·18 claims
- 1081US6617654B2Semiconductor device with sidewall spacers and elevated source/drain regionMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Sep 9, 2003·28 cites·7 claims
- 1179US6518635B1Semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Feb 11, 2003·22 cites·18 claims
- 1274US8624667B2High electron mobility transistors with multiple channelsTEO KOON HOO·Filed 2012·Granted Jan 7, 2014·4 cites·18 claims
- 1373US8247844B2Semiconductor device and manufacturing method thereofOISHI TOSHIYUKI·Filed 2009·Granted Aug 21, 2012·7 cites·3 claims
- 1473US6635938B1Semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Oct 21, 2003·19 cites·22 claims
- 1572US6081662ASemiconductor device including trench isolation structure and a method of manufacturing thereofMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Jun 27, 2000·44 cites·9 claims
- 1667US6600195B1Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Jul 29, 2003·11 cites·8 claims
- 1765US6344388B1Method of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Feb 5, 2002·24 cites·16 claims
- 1862US7939943B2Nitride semiconductor device including an electrode in ohmic contact with a P-type nitride semiconductor contact layerMITSUBISHI ELECTRIC CORP·Filed 2008·Granted May 10, 2011·1 cites·6 claims
- 1961US6624034B2Method of making field effect transistor in which the increase of parasitic capacitance is restrained by scale reductionMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Sep 23, 2003·8 cites·13 claims
- 2050US6506651B2Semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Jan 14, 2003·2 cites·15 claims
- 2148US7791097B2Nitride semiconductor device and manufacturing method of the sameMITSUBISHI ELECTRIC CORP·Filed 2007·Granted Sep 7, 2010·0 cites·10 claims
- 2246US7714439B2Nitride semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2007·Granted May 11, 2010·0 cites·6 claims
- 2346US2009160054A1Nitride semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2008·Application pending·0 cites
- 2446US2009127661A1Nitride semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2008·Application pending·0 cites
- 2545US7842962B2Nitride semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2005·Granted Nov 30, 2010·0 cites·4 claims
- 2645US7678597B2Method of manufacturing semiconductor device including gallium-nitride semiconductor structure and a palladium contactMITSUBISHI ELECTRIC CORP·Filed 2008·Granted Mar 16, 2010·0 cites·7 claims
- 2743US7378351B2Method of manufacturing nitride semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2005·Granted May 27, 2008·0 cites·4 claims
- 2842US2011316047A1Semiconductor device and manufacturing method of the sameNANJO TAKUMA·Filed 2011·Application pending·0 cites
- 2941US2009170304A1Method of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2008·Application pending·0 cites
- 3040US2015035066A1Fet chipOTSUKA HIROSHI·Filed 2012·Application pending·0 cites
- 3136US2013020584A1Semiconductor device and method for manufacturing sameMITSUBISHI ELECTRIC CORP·Filed 2010·Application pending·0 cites
- 3236US2002011635A1Semiconductor device and production method thereofFiled 2000·Application pending·0 cites
- 3333US2013175544A1Semiconductor device, and method of manufacturing semiconductor deviceOISHI TOSHIYUKI·Filed 2010·Application pending·0 cites
- 3430US2002006706A1Semiconductor device and method of manufacturing seciconductor deviceFiled 1999·Application pending·0 cites
- 3529US9570599B2Transistor having nitride semiconductor used therein and method for manufacturing transistor having nitride semiconductor used thereinYAMAGUCHI YUTARO·Filed 2012·Granted Feb 14, 2017·0 cites·1 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →