Inventor · disambiguated record
Tong-Chern Ong
Also filed as: ONG TONG-CHERN
35 granted patents·3 pending applications·376 citations·filing 1991–2022
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD17TAIWAN SEMICONDUCTOR MFG10INTEL CORP7WANG MING-TSONG3YANG PING-LIN1
Top patents by PatentIndex Score
38 records- 0195US10164169B2Memory device having a single bottom electrode layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 25, 2018·11 cites·20 claims
- 0294US9385316B2RRAM retention by depositing Ti capping layer before HK HfOTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jul 5, 2016·12 cites·19 claims
- 0394US7388187B1Cross-talk reduction through deep pixel well implant for image sensorsTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Jun 17, 2008·29 cites·20 claims
- 0493US10516106B2Electrode structure to improve RRAM performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 24, 2019·7 cites·20 claims
- 0592US10249756B2Semiconductor device including memory and logic circuit having FETs with ferroelectric layer and manufacturing methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 2, 2019·9 cites·20 claims
- 0689US7579646B2Flash memory with deep quantum well and high-K dielectricTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Aug 25, 2009·17 cites·13 claims
- 0788US5422845AMethod and device for improved programming threshold voltage distribution in electrically programmable read only memory arrayINTEL CORP·Filed 1993·Granted Jun 6, 1995·63 cites·20 claims
- 0886US8760255B2Contactless communications using ferromagnetic materialYANG PING-LIN·Filed 2011·Granted Jun 24, 2014·8 cites·21 claims
- 0986US7420250B2Electrostatic discharge protection device having light doped regionsTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Sep 2, 2008·14 cites·19 claims
- 1085US7968967B2One-time-programmable anti-fuse formed using damascene processTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Jun 28, 2011·13 cites·7 claims
- 1183US11004975B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 11, 2021·1 cites·20 claims
- 1283US10686125B2Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 16, 2020·1 cites·20 claims
- 1382US10461126B2Memory circuit and formation method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 29, 2019·4 cites·20 claims
- 1481US11832529B2Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 28, 2023·0 cites·20 claims
- 1580US5233562AMethods of repairing field-effect memory cells in an electrically erasable and electrically programmable memory deviceINTEL CORP·Filed 1991·Granted Aug 3, 1993·45 cites·15 claims
- 1678US6552433B1Bond pads using mesh pattern via structures for protecting devices/circuits under I/O padsTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Apr 22, 2003·27 cites·27 claims
- 1774US11316096B2Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 26, 2022·0 cites·20 claims
- 1874US6124168AMethod for forming an asymmetric floating gate overlap for improved device performance in buried bit-line devicesINTEL CORP·Filed 1994·Granted Sep 26, 2000·32 cites·7 claims
- 1971US9412721B2Contactless communications using ferromagnetic materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 9, 2016·2 cites·20 claims
- 2071US8294197B2Program/erase schemes for floating gate memory cellsWANG MING-TSONG·Filed 2006·Granted Oct 23, 2012·5 cites·20 claims
- 2170US10482958B2RRAM-based monotonic counterTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 19, 2019·2 cites·20 claims
- 2270US8816422B2Multi-trapping layer flash memory cellWANG MING-TSONG·Filed 2006·Granted Aug 26, 2014·5 cites·20 claims
- 2365US10879310B2Memory circuit and formation method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 29, 2020·0 cites·20 claims
- 2465US10879309B2Memory circuit and formation method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 29, 2020·0 cites·20 claims
- 2564US10916305B2RRAM-based monotonic counterTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 9, 2021·0 cites·20 claims
- 2663US11329221B2Electrode structure to improve RRAM performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 10, 2022·0 cites·20 claims
- 2763US11183631B2Electrode structure to improve RRAM performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 23, 2021·0 cites·20 claims
- 2863US5289026AAsymmetric floating gate overlap for improved device characteristics in buried bit-line devicesINTEL CORP·Filed 1991·Granted Feb 22, 1994·20 cites·6 claims
- 2961US10727337B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 28, 2020·0 cites·20 claims
- 3059US8735963B2Flash memory cells having leakage-inhibition layersWANG MING-TSONG·Filed 2008·Granted May 27, 2014·2 cites·11 claims
- 3158US7155686B2Placement and routing method to reduce Joule heatingTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Dec 26, 2006·10 cites·21 claims
- 3252US5548549AMethod and device for improved programming threshold voltage distribution in electrically programmable read only memory arrayINTEL CORP·Filed 1995·Granted Aug 20, 1996·12 cites·11 claims
- 3346US5196361AMethod of making source junction breakdown for devices with source-side erasingINTEL CORP·Filed 1991·Granted Mar 23, 1993·11 cites·26 claims
- 3443US5466624AIsolation between diffusion lines in a memory arrayINTEL CORP·Filed 1994·Granted Nov 14, 1995·13 cites·20 claims
- 3537US2005258505A1Mixed implantation on polysilicon fuse for CMOS technologyTAIWAN SEMICONDUCTOR MFG·Filed 2004·Application pending·0 cites
- 3636US2003127716A1Single layer wiring bond pad with optimum AL film thickness in Cu/FSG process for devices under padsTAIWAN SEMICONDUCTOR MFG·Filed 2002·Application pending·0 cites
- 3736US2003071323A1Microelectronic fabrication with upper lying aluminum fuse layer in copper interconnect semiconductor technology and method for fabrication thereofTAIWAN SEMICONDUCTOR MFG·Filed 2001·Application pending·0 cites
- 3835US7199431B2Semiconductor devices with reduced impact from alien particlesTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Apr 3, 2007·1 cites·16 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →