Inventor · disambiguated record
Tohru Saitoh
Also filed as: SAITOH TOHRU
46 granted patents·6 pending applications·780 citations·filing 1998–2015
98Inventor score
Files withMATSUSHITA ELECTRIC INDUSTRIAL CO LTD32PANASONIC CORP8KAWASHIMA TAKAHIRO3SAITOH TOHRU3JOLED INC2
Top patents by PatentIndex Score
52 records- 0195US7586130B2Vertical field effect transistor using linear structure as a channel region and method for fabricating the samePANASONIC CORP·Filed 2006·Granted Sep 8, 2009·47 cites·27 claims
- 0295US6852602B2Semiconductor crystal film and method for preparation thereofMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Feb 8, 2005·103 cites·23 claims
- 0393US7718995B2Nanowire, method for fabricating the same, and device having nanowiresPANASONIC CORP·Filed 2007·Granted May 18, 2010·20 cites·21 claims
- 0492US6597016B1Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Jul 22, 2003·53 cites·11 claims
- 0591US6399993B1Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Jun 4, 2002·67 cites·10 claims
- 0690US6455364B1Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Sep 24, 2002·55 cites·12 claims
- 0786US6403976B1Semiconductor crystal, fabrication method thereof, and semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Jun 11, 2002·37 cites·4 claims
- 0885US7772125B2Structure in which cylindrical microstructure is maintained in anisotropic groove, method for fabricating the same, and semiconductor device, TFT driving circuit, panel, display and sensor using the structure in which cylindrical microstructure is maintained in anisotropic groovePANASONIC CORP·Filed 2006·Granted Aug 10, 2010·12 cites·20 claims
- 0983US8106382B2Field effect transistorSAITOH TOHRU·Filed 2007·Granted Jan 31, 2012·12 cites·20 claims
- 1083US6645836B2Method of forming a semiconductor wafer having a crystalline layer thereon containing silicon, germanium and carbonMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Nov 11, 2003·25 cites·10 claims
- 1183US6537369B1SiGeC semiconductor crystal and production method thereofMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Mar 25, 2003·24 cites·9 claims
- 1280US8143144B2Semiconductor nanowire and its manufacturing methodKAWASHIMA TAKAHIRO·Filed 2008·Granted Mar 27, 2012·6 cites·18 claims
- 1379US8242025B2Method for producing semiconductor chip, and field effect transistor and method for manufacturing sameKAWASHIMA TAKAHIRO·Filed 2007·Granted Aug 14, 2012·8 cites·12 claims
- 1479US6858454B1Method for measuring semiconductor constituent element content and method for manufacturing a semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Feb 22, 2005·15 cites·16 claims
- 1579US6291775B1Flip chip bonding land waving prevention patternMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1999·Granted Sep 18, 2001·54 cites·8 claims
- 1679US6140412AWaterproofing agent for ink jet printing paperNICCA CHEMICAL CO·Filed 1999·Granted Oct 31, 2000·43 cites·17 claims
- 1778US7465969B2Bipolar transistor and method for fabricating the samePANASONIC CORP·Filed 2006·Granted Dec 16, 2008·7 cites·8 claims
- 1876US8421080B2Thin-film transistor array device, organic EL display device, and method of manufacturing thin-film transistor array deviceSAITOH TOHRU·Filed 2011·Granted Apr 16, 2013·4 cites·20 claims
- 1975US6169296B1Light-emitting diode deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1998·Granted Jan 2, 2001·57 cites·12 claims
- 2073US7629629B2Semiconductor nanowire and semiconductor device including the nanowirePANASONIC CORP·Filed 2005·Granted Dec 8, 2009·5 cites·39 claims
- 2172US8368049B2Nanowire transistor and method for fabricating the samePANASONIC CORP·Filed 2012·Granted Feb 5, 2013·3 cites·3 claims
- 2271US8198622B2Nanowire, device comprising nanowire, and their production methodsKAWASHIMA TAKAHIRO·Filed 2007·Granted Jun 12, 2012·4 cites·14 claims
- 2369US6762106B2Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Jul 13, 2004·11 cites·10 claims
- 2468US8486788B2Semiconductor device and method for fabricating the sameIWANAGA JUNKO·Filed 2011·Granted Jul 16, 2013·2 cites·12 claims
- 2566US7091099B2Bipolar transistor and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Aug 15, 2006·11 cites·8 claims
- 2663US7105449B1Method for cleaning substrate and method for producing semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Sep 12, 2006·8 cites·11 claims
- 2762US6649496B2Production method for semiconductor crystalMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Nov 18, 2003·4 cites·6 claims
- 2861US7719031B2Heterojunction biploar transistor and method for manufacturing samePANASONIC CORP·Filed 2004·Granted May 18, 2010·9 cites·4 claims
- 2961US6838395B1Method for fabricating a semiconductor crystalMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Jan 4, 2005·6 cites·13 claims
- 3061US6660393B2SiGeC semiconductor crystals and the method producing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Dec 9, 2003·6 cites·3 claims
- 3160US6720587B2Structure evaluation method, method for manufacturing semiconductor devices, and recording mediumMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Apr 13, 2004·7 cites·4 claims
- 3256US6277657B1Apparatus for fabricating semiconductor device and fabrication method thereforMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1999·Granted Aug 21, 2001·20 cites·23 claims
- 3353US6847062B2Semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Jan 25, 2005·5 cites·16 claims
- 3452US9824942B2Method of manufacturing thin-film transistor substrate including a copper alloy filmJOLED INC·Filed 2014·Granted Nov 21, 2017·0 cites·19 claims
- 3551US6987072B2Method of producing semiconductor crystalMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Jan 17, 2006·2 cites·16 claims
- 3649US6919253B2Method of forming a semiconductor device including simultaneously forming a single crystalline epitaxial layer and a polycrystalline or amorphous layerMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Jul 19, 2005·2 cites·8 claims
- 3748US7986002B2FINFET-type semiconductor device and method for fabricating the samePANASONIC CORP·Filed 2004·Granted Jul 26, 2011·1 cites·20 claims
- 3848US6930026B2Method of forming a semiconductor wafer having a crystalline layer thereon containing silicon, germanium and carbonMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Aug 16, 2005·1 cites·10 claims
- 3948US6847063B2Semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Jan 25, 2005·3 cites·12 claims
- 4048US6620665B1Method for fabricating semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1999·Granted Sep 16, 2003·13 cites·14 claims
- 4145US6713790B2Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Mar 30, 2004·2 cites·2 claims
- 4244US8436355B2Thin-film transistor, manufacturing method therefor, and electronic device using a thin-film transistorUKEDA TAKAAKI·Filed 2008·Granted May 7, 2013·0 cites·21 claims
- 4343US7049198B2Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted May 23, 2006·0 cites·3 claims
- 4442US2004150004A1Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Application pending·0 cites
- 4539US2002189535A1Method for manufacturing semiconductor crystal filmMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Application pending·0 cites
- 4638US6087725ALow barrier ohmic contact for semiconductor light emitting deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1998·Granted Jul 11, 2000·6 cites·15 claims
- 4738US2006225642A1Method of forming semiconductor crystalKANZAWA YOSHIHIKO·Filed 2003·Application pending·0 cites
- 4838US2008035912A1Field-Effect Transistor, Method of Manufacturing the Same, and Electronic Device Using the SameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2005·Application pending·0 cites
- 4935US2017207326A1Method of manufacturing thin-film transistor substrateJOLED INC·Filed 2015·Application pending·0 cites
- 5035US2004256635A1Hetero bipolar transistorMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Application pending·0 cites
Showing the top 50 of 52 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →