Inventor · disambiguated record
Toru Shiomi
Also filed as: SHIOMI TORU
16 granted patents·435 citations·filing 1988–2002
94Inventor score
Top patents by PatentIndex Score
16 records- 0197US5124589ASemiconductor integrated circuit capable of synchronous and asynchronous operations and operating method thereforMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Jun 23, 1992·172 cites·24 claims
- 0285US6385081B1Semiconductor integrated circuitMITSUBISHI ELECTRIC CORP·Filed 2001·Granted May 7, 2002·40 cites·20 claims
- 0380US6141269ASemiconductor integrated circuit device using BiCMOS technologyMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Oct 31, 2000·40 cites·6 claims
- 0479US5583460AOutput driver circuit for restraining generation of noise and semiconductor memory device utilizing such circuitMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Dec 10, 1996·36 cites·7 claims
- 0575US5274597ASemiconductor memory device capable of driving divided word lines at high speedMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Dec 28, 1993·37 cites·18 claims
- 0664US6314037B1Semiconductor integrated circuit device using BiCMOS technologyMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Nov 6, 2001·12 cites·16 claims
- 0762US5225717ABiCMOS input buffer circuit operable at high speed under less power consumptionMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Jul 6, 1993·16 cites·3 claims
- 0856US6818983B2Semiconductor memory chip and semiconductor memory device using the sameRENESAS TECH CORP·Filed 2002·Granted Nov 16, 2004·7 cites·5 claims
- 0954US5013936ABiCMOS logic circuit using complementary bipolar transistors having their emitters connected togetherMITSUBISHI ELECTRIC CORP·Filed 1990·Granted May 7, 1991·12 cites·6 claims
- 1052US5095355ABipolar cross-coupled memory cells having improved immunity to soft errorsMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Mar 10, 1992·16 cites·12 claims
- 1151US5359553ALow power ECL/MOS level converting circuit and memory device and method of converting a signal levelMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Oct 25, 1994·11 cites·21 claims
- 1249US5687111AStatic type semiconductor memory device capable of operating at a low voltage and reducing a memory cell areaMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Nov 11, 1997·15 cites·6 claims
- 1347US4897820ABi-CMOS type of semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Jan 30, 1990·10 cites·10 claims
- 1444US4791382ADriver circuitMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Dec 13, 1988·6 cites·10 claims
- 1541US6466506B2Semiconductor memory device capable of repairing small leak failureMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Oct 15, 2002·3 cites·9 claims
- 1638US6272058B1Semiconductor memory device capable of performing data reading/writing in units of plurality of bitsMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Aug 7, 2001·2 cites·4 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →