Inventor · disambiguated record
Tomohiro Shonai
Also filed as: SHONAI TOMOHIRO
10 granted patents·6 pending applications·1 citations·filing 2002–2025
77Inventor score
Top patents by PatentIndex Score
16 records- 0181US12084789B28-inch n-type SiC single crystal substrateRESONAC CORP·Filed 2023·Granted Sep 10, 2024·0 cites·8 claims
- 0280US2024401234A18-INCH N-TYPE SiC SINGLE CRYSTAL SUBSTRATERESONAC CORP·Filed 2024·Application pending·0 cites
- 0377US10236338B2SiC single crystal seed, SiC ingot, SiC single crystal seed production method, and SiC single crystal ingot production methodSHOWA DENKO KK·Filed 2016·Granted Mar 19, 2019·1 cites·19 claims
- 0475US11859313B28-inch SiC single crystal substrateRESONAC CORP·Filed 2023·Granted Jan 2, 2024·0 cites·14 claims
- 0567US12234571B2SiC single crystal substrateRESONAC CORP·Filed 2023·Granted Feb 25, 2025·0 cites·8 claims
- 0664US11773507B2SiC single crystal, and SiC ingotSHOWA DENKO KK·Filed 2020·Granted Oct 3, 2023·0 cites·8 claims
- 0764US2025146176A1SiC SINGLE CRYSTAL SUBSTRATERESONAC CORP·Filed 2025·Application pending·0 cites
- 0863US10988857B2SiC single crystal growth apparatus containing movable heat-insulating material and growth method of SiC single crystal using the sameSHOWA DENKO KK·Filed 2019·Granted Apr 27, 2021·0 cites·18 claims
- 0962US11441235B2Crystal growing apparatus and crucible having a main body portion and a low radiation portionSHOWA DENKO KK·Filed 2019·Granted Sep 13, 2022·0 cites·17 claims
- 1058US11453957B2Crystal growing apparatus and crucible having a main body portion and a first portion having a radiation rate different from that of the main body portionSHOWA DENKO KK·Filed 2019·Granted Sep 27, 2022·0 cites·8 claims
- 1152US10724152B2Method for producing SiC single crystal, SiC single crystal, and SiC ingotSHOWA DENKO KK·Filed 2016·Granted Jul 28, 2020·0 cites·8 claims
- 1245US2011247547A1Process for producing single-crystal sapphireSHOWA DENKO KK·Filed 2009·Application pending·0 cites
- 1345US2011253031A1Process for producing single-crystal sapphireSHOWA DENKO KK·Filed 2009·Application pending·0 cites
- 1444US2010028240A1Process for producing silicon carbide single crystalSHONAI TOMOHIRO·Filed 2007·Application pending·0 cites
- 1538US2012015799A1Method for producing sapphire single crystal, and sapphire single crystal obtained by the methodSHONAI TOMOHIRO·Filed 2010·Application pending·0 cites
- 1635US6937630B2Laser oscillation method and laser deviceMEGAOPTO CO LTD·Filed 2002·Granted Aug 30, 2005·0 cites·29 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →