Inventor · disambiguated record
Tongnian Sun
Also filed as: SUN TONGNIAN
8 granted patents·5 pending applications·0 citations·filing 2017–2022
70Inventor score
Top patents by PatentIndex Score
13 records- 0161US12486598B2Rocking type seed crystal surface corrosion, cleaning and drying device and process methodTHE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION·Filed 2022·Granted Dec 2, 2025·0 cites·9 claims
- 0259US12383879B2Semiconductor phosphide injection synthesis system and control methodTHE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION·Filed 2021·Granted Aug 12, 2025·0 cites·5 claims
- 0357US12098478B2Apparatus for preparing a single crystal comprising a volatilization chamber and a plurality of crystal pieces fixed by combined fixtures located in a solid connection chamberTHE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION·Filed 2020·Granted Sep 24, 2024·0 cites·8 claims
- 0456US2024228286A1Purification apparatus and purification method for non-metal semiconductor materialTHE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION·Filed 2021·Application pending·0 cites
- 0554US10519563B2Device and method for continuous VGF crystal growth through rotation after horizontal injection synthesisTHE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION·Filed 2017·Granted Dec 31, 2019·0 cites·13 claims
- 0653US2024229291A1Large-scale compound semiconductor single crystal growth system and methodTHE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION·Filed 2021·Application pending·0 cites
- 0753US2024209545A1Method for preparing compound semiconductor crystal by combining continuous lec and vgf after injection synthesisTHE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION·Filed 2021·Application pending·0 cites
- 0852US11781240B2Method for preparing indium phosphide crystal by utilizing indium-phosphorus mixtureTHE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION·Filed 2020·Granted Oct 10, 2023·0 cites·10 claims
- 0951US2023069057A1Growth Device and Method for Low-Stress CrystalsTHE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION·Filed 2021·Application pending·0 cites
- 1050US12188145B2Device and method for continuous VGF crystal growth through reverse injection synthesisTHE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION·Filed 2018·Granted Jan 7, 2025·0 cites·4 claims
- 1149US11242615B2Growth method and apparatus for preparing high-yield crystalsTHE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION·Filed 2019·Granted Feb 8, 2022·0 cites·10 claims
- 1246US2024035192A1Polishing Device for Indium Phosphide Substrate, and Polishing ProcessTHE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION·Filed 2021·Application pending·0 cites
- 1343US10648100B1Method for carrying out phosphide in-situ injection synthesis by carrier gasTHE 13TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECH GROUP CORPORATION·Filed 2017·Granted May 12, 2020·0 cites·9 claims
Join the waitlist — get patent alerts
Get an alert when Tongnian Sun files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →