Inventor · disambiguated record
Tomohiro Takamatsu
Also filed as: TAKAMATSU TOMOHIRO
14 granted patents·2 pending applications·167 citations·filing 2000–2019
92Inventor score
Files withFUJITSU LTD8FUJITSU MICROELECTRONICS LTD2FUJITSU SEMICONDUCTOR LTD2TAKAMATSU TOMOHIRO2HITACHI HIGH TECH CORP1
Top patents by PatentIndex Score
16 records- 0187US6624458B2Semiconductor device having a ferroelectric capacitor and fabrication process thereofFUJITSU LTD·Filed 2001·Granted Sep 23, 2003·40 cites·13 claims
- 0284US6887716B2Process for producing high quality PZT films for ferroelectric memory integrated circuitsFUJITSU LTD·Filed 2000·Granted May 3, 2005·34 cites·20 claims
- 0384US6740533B2Semiconductor device having a ferroelectric capacitor and fabrication process thereofFUJITSU LTD·Filed 2003·Granted May 25, 2004·30 cites·6 claims
- 0480US7498625B2Semiconductor device and manufacturing method thereofFUJITSU MICROELECTRONICS LTD·Filed 2005·Granted Mar 3, 2009·8 cites·43 claims
- 0579US6531726B1Ferroelectric capacitor with electrode formed in separate oxidizing conditionsFUJITSU LTD·Filed 2000·Granted Mar 11, 2003·21 cites·10 claims
- 0676US7547933B2Semiconductor device and manufacturing method of a semiconductor deviceFUJITSU MICROELECTRONICS LTD·Filed 2003·Granted Jun 16, 2009·14 cites·14 claims
- 0774US11257678B2Plasma processing methodHITACHI HIGH TECH CORP·Filed 2019·Granted Feb 22, 2022·2 cites·8 claims
- 0868US8153448B2Manufacturing method of a semiconductor deviceTAKAMATSU TOMOHIRO·Filed 2009·Granted Apr 10, 2012·2 cites·10 claims
- 0964US9666596B2Semiconductor memory device and method for manufacturing the sameTOSHIBA KK·Filed 2016·Granted May 30, 2017·1 cites·13 claims
- 1064US8652854B2Manufacturing method of a semiconductor deviceTAKAMATSU TOMOHIRO·Filed 2012·Granted Feb 18, 2014·1 cites·3 claims
- 1161US7892916B2Semiconductor device and fabricating method thereofFUJITSU SEMICONDUCTOR LTD·Filed 2005·Granted Feb 22, 2011·2 cites·11 claims
- 1257US7211850B2Semiconductor device with specifically shaped contact holesFUJITSU LTD·Filed 2004·Granted May 1, 2007·5 cites·7 claims
- 1355US6825515B2Ferroelectric capacitor with electrode formed in separate oxidizing conditionsFUJITSU LTD·Filed 2003·Granted Nov 30, 2004·4 cites·8 claims
- 1453US7982466B2Inspection method for semiconductor memoryFUJITSU SEMICONDUCTOR LTD·Filed 2006·Granted Jul 19, 2011·3 cites·20 claims
- 1550US2007184595A1Semiconductor device and manufacturing method thereofFUJITSU LTD·Filed 2007·Application pending·0 cites
- 1635US2004212041A1Semiconductor device and method of manufacturing the sameFUJITSU LTD·Filed 2003·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Tomohiro Takamatsu files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →