Inventor · disambiguated record
Toshiyuki Takewaki
Also filed as: TAKEWAKI TOSHIYUKI
52 granted patents·10 pending applications·344 citations·filing 1996–2018
98Inventor score
Files withNEC ELECTRONICS CORP28RENESAS ELECTRONICS CORP14NEC CORP5OSHIDA DAISUKE3TAKEWAKI TOSHIYUKI3
Top patents by PatentIndex Score
62 records- 0195US9443868B1Semiconductor memory device and method of manufacturing the sameTOSHIBA KK·Filed 2015·Granted Sep 13, 2016·15 cites·18 claims
- 0294US9559183B2Semiconductor device with varying thickness of insulating film between electrode and gate electrode and method of manufacturing semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2014·Granted Jan 31, 2017·14 cites·12 claims
- 0393US9306027B2Semiconductor device and a method for manufacturing a semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2014·Granted Apr 5, 2016·13 cites·7 claims
- 0487US7479700B2Semiconductor device featuring copper wiring layers of different widths having metal capping layers of different thickness formed thereon, and method for manufacturing the sameNEC ELECTRONICS CORP·Filed 2006·Granted Jan 20, 2009·10 cites·10 claims
- 0586US7728432B2Narrow and wide copper interconnections composed of (111), (200) and (511) surfacesNEC ELECTRONICS CORP·Filed 2005·Granted Jun 1, 2010·12 cites·10 claims
- 0685US9984884B2Method of manufacturing semiconductor device with a multi-layered gate dielectricRENESAS ELECTRONICS CORP·Filed 2016·Granted May 29, 2018·3 cites·3 claims
- 0784US7846830B2Semiconductor device and method for manufacturing sameNEC ELECTRONICS CORP·Filed 2007·Granted Dec 7, 2010·11 cites·7 claims
- 0884US7737555B2Semiconductor method having silicon-diffused metal wiring layerNEC ELECTRONICS CORP·Filed 2006·Granted Jun 15, 2010·6 cites·10 claims
- 0981US6391774B1Fabrication process of semiconductor deviceNEC CORP·Filed 2000·Granted May 21, 2002·25 cites·15 claims
- 1080US7312535B2Semiconductor device having an anti-oxidizing layer that inhibits corrosion of an interconnect layerNEC ELECTRONICS CORP·Filed 2004·Granted Dec 25, 2007·26 cites·14 claims
- 1180US7229921B2Semiconductor device and manufacturing method for the sameNEC ELECTRONICS CORP·Filed 2002·Granted Jun 12, 2007·27 cites·62 claims
- 1279US6949832B2Semiconductor device including dissimilar element-diffused metal layer and manufacturing method thereofNEC ELECTRONICS CORP·Filed 2003·Granted Sep 27, 2005·18 cites·23 claims
- 1378US8053863B2Electrical fuse and semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2009·Granted Nov 8, 2011·7 cites·8 claims
- 1477US7842602B2Semiconductor device having silicon-diffused metal wiring layer and its manufacturing methodRENESAS ELECTRONICS CORP·Filed 2007·Granted Nov 30, 2010·3 cites·25 claims
- 1577US7692265B2Fuse and seal ringNEC ELECTRONICS CORP·Filed 2005·Granted Apr 6, 2010·7 cites·13 claims
- 1676US9070661B2Semiconductor device including a strain relaxation filmRENESAS ELECTRONICS CORP·Filed 2014·Granted Jun 30, 2015·3 cites·23 claims
- 1775US6379782B2Semiconductor device formed with metal wiring on a wafer by chemical mechanical polishing, and method of manufacturing the sameNEC CORP·Filed 2001·Granted Apr 30, 2002·21 cites·3 claims
- 1874US7745937B2Semiconductor device and method of manufacturing the sameNEC ELECTRONICS CORP·Filed 2006·Granted Jun 29, 2010·4 cites·15 claims
- 1973US8486836B2Semiconductor device and method of manufacturing the sameOSHIDA DAISUKE·Filed 2011·Granted Jul 16, 2013·3 cites·8 claims
- 2072US7741214B2Method of forming a semiconductor device featuring copper wiring layers of different widths having metal capping layers of different thicknesses formed thereonNEC ELECTRONICS CORP·Filed 2008·Granted Jun 22, 2010·3 cites·3 claims
- 2171US5874777ASemiconductor device with enhanced thermal conductivityOHMI TADAHIRO·Filed 1996·Granted Feb 23, 1999·38 cites·21 claims
- 2270US9177857B2Semiconductor device with high reliability and manufacturing method thereofOSHIDA DAISUKE·Filed 2009·Granted Nov 3, 2015·4 cites·12 claims
- 2369US7508082B2Semiconductor device and method of manufacturing the sameNEC ELECTRONICS CORP·Filed 2007·Granted Mar 24, 2009·3 cites·6 claims
- 2468US6890864B2Semiconductor device fabricating method and treating liquidNEC ELECTRONICS CORP·Filed 2003·Granted May 10, 2005·12 cites·27 claims
- 2567US9660045B2Semiconductor device and a method for manufacturing a semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2016·Granted May 23, 2017·1 cites·15 claims
- 2667US8642467B2Semiconductor device having silicon-diffused metal wiring layer and its manufacturing methodOHTO KOICHI·Filed 2012·Granted Feb 4, 2014·1 cites·28 claims
- 2767US8030737B2Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2008·Granted Oct 4, 2011·3 cites·13 claims
- 2867US7687917B2Single damascene structure semiconductor device having silicon-diffused metal wiring layerNEC ELECTRONICS CORP·Filed 2003·Granted Mar 30, 2010·7 cites·13 claims
- 2967US7476611B2Semiconductor device and manufacturing method thereofNEC ELECTRONICS CORP·Filed 2004·Granted Jan 13, 2009·9 cites·46 claims
- 3067US7358609B2Semiconductor deviceNEC ELECTRONICS CORP·Filed 2005·Granted Apr 15, 2008·4 cites·9 claims
- 3166US8115318B2Semiconductor device having silicon-diffused metal wiring layer and its manufacturing methodOHTO KOICHI·Filed 2010·Granted Feb 14, 2012·1 cites·17 claims
- 3266US7633138B2Semiconductor device and method of manufacturing the sameNEC ELECTRONICS CORP·Filed 2006·Granted Dec 15, 2009·3 cites·5 claims
- 3364US7327031B2Semiconductor device and method of manufacturing the sameNEC ELECTRONICS CORP·Filed 2004·Granted Feb 5, 2008·9 cites·6 claims
- 3463US7888254B2Semiconductor device having a refractory metal containing film and method for manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2009·Granted Feb 15, 2011·2 cites·7 claims
- 3560US7936072B2Semiconductor device having dual damascene structureRENESAS ELECTRONICS CORP·Filed 2008·Granted May 3, 2011·1 cites·17 claims
- 3659US10410868B2Semiconductor device and method of manufacturing semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2018·Granted Sep 10, 2019·0 cites·4 claims
- 3757US7521802B2Semiconductor device having a refractory metal containing film and method for manufacturing the sameNEC ELECTRONICS CORP·Filed 2005·Granted Apr 21, 2009·1 cites·18 claims
- 3855US7674704B2Method of manufacturing a semiconductor device having an interconnect structure that increases in impurity concentration as width increasesNEC ELECTRONICS CORP·Filed 2009·Granted Mar 9, 2010·0 cites·8 claims
- 3954US7274104B2Semiconductor device having an interconnect that increases in impurity concentration as width increasesNEC ELECTRONICS CORP·Filed 2004·Granted Sep 25, 2007·4 cites·5 claims
- 4054US6458690B2Method for manufacturing a multilayer interconnection structureNEC CORP·Filed 2001·Granted Oct 1, 2002·6 cites·7 claims
- 4153US7955980B2Method of manufacturing semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2009·Granted Jun 7, 2011·0 cites·7 claims
- 4253US7514352B2Method of manufacturing a semiconductor device having an interconnect structure that increases in impurity concentration as width increasesNEC ELECTRONICS CORP·Filed 2007·Granted Apr 7, 2009·0 cites·8 claims
- 4350US7601640B2Method of manfacturing semiconductor deviceNEC ELECTRONICS CORP·Filed 2007·Granted Oct 13, 2009·0 cites·9 claims
- 4450US6555911B1Semiconductor device and method of manufacturing interconnections thereof using copper and tungsten in predetermined ratiosNEC ELECTRONICS CORP·Filed 2000·Granted Apr 29, 2003·4 cites·7 claims
- 4549US9362401B2Semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2015·Granted Jun 7, 2016·0 cites·23 claims
- 4648US2009115022A1Semiconductor deviceNEC ELECTRONICS COROPORATION·Filed 2008·Application pending·0 cites
- 4747US2012231623A1Method of manufacturing a high-reliability semiconductor deviceOSHIDA DAISUKE·Filed 2012·Application pending·0 cites
- 4846US7897475B2Semiconductor device having projection on lower electrode and method for forming the sameRENESAS ELECTRONICS CORP·Filed 2008·Granted Mar 1, 2011·0 cites·11 claims
- 4946US7821101B2Semiconductor device including capacitor including upper electrode covered with high density insulation film and production method thereofNEC ELECTRONICS CORP·Filed 2008·Granted Oct 26, 2010·0 cites·14 claims
- 5043US8329584B2Method of manufacturing semiconductor deviceTAKEWAKI TOSHIYUKI·Filed 2011·Granted Dec 11, 2012·0 cites·14 claims
Showing the top 50 of 62 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →