Inventor · disambiguated record
Toshimitsu Taniguchi
Also filed as: TANIGUCHI TOSHIMITSU
19 granted patents·4 pending applications·83 citations·filing 2000–2024
92Inventor score
Top patents by PatentIndex Score
23 records- 0186US12446257B2Method for forming transistor devices having source region segments and body region segmentsSEMICONDUCTOR COMPONENTS IND LLC·Filed 2024·Granted Oct 14, 2025·0 cites·25 claims
- 0279US11996477B2Transistor device having a source region segments and body region segmentsSEMICONDUCTOR COMPONENTS IND LLC·Filed 2023·Granted May 28, 2024·0 cites·23 claims
- 0378US11158734B2Transistor device having a source region segments and body region segmentsSEMICONDUCTOR COMPONENTS IND LLC·Filed 2019·Granted Oct 26, 2021·1 cites·22 claims
- 0477US6635925B1Semiconductor device and method of manufacturing the sameSANYO ELECTRIC CO·Filed 2000·Granted Oct 21, 2003·24 cites·8 claims
- 0574US11605734B2Transistor device having a source region segments and body region segmentsSEMICONDUCTOR COMPONENTS IND LLC·Filed 2021·Granted Mar 14, 2023·0 cites·20 claims
- 0665US7372164B2Semiconductor device with parallel interconnectsSANYO ELECTRIC CO·Filed 2005·Granted May 13, 2008·2 cites·13 claims
- 0765US6784059B1Semiconductor device and method of manufacturing thereofSANYO ELECTRIC CO·Filed 2000·Granted Aug 31, 2004·11 cites·20 claims
- 0865US6717243B2Semiconductor device and the manufacturing method thereofSANYO ELECTRIC CO·Filed 2002·Granted Apr 6, 2004·12 cites·6 claims
- 0964US6873053B2Semiconductor device with smoothed pad portionSANYO ELECTRIC CO·Filed 2002·Granted Mar 29, 2005·9 cites·13 claims
- 1061US6683349B1Semiconductor device and method of manufacturing the sameSANYO ELECTRIC CO·Filed 2000·Granted Jan 27, 2004·10 cites·7 claims
- 1152US6861372B2Semiconductor device manufacturing methodSANYO ELECTRIC CO·Filed 2001·Granted Mar 1, 2005·6 cites·12 claims
- 1249US11227928B1Termination structures for trench-gate field-effect transistorsSEMICONDUCTOR COMPONENTS IND LLC·Filed 2020·Granted Jan 18, 2022·0 cites·20 claims
- 1347US6924534B2Semiconductor device having MOS transistors and bipolar transistors on a single semiconductor substrateSANYO ELECTRIC CO·Filed 2004·Granted Aug 2, 2005·4 cites·5 claims
- 1446US10340372B1Transistor device having a pillar structureSEMICONDUCTOR COMPONENTS IND LLC·Filed 2018·Granted Jul 2, 2019·0 cites·20 claims
- 1546US7022575B2Manufacturing method of semiconductor deviceSANYO ELECTRIC CO·Filed 2004·Granted Apr 4, 2006·2 cites·10 claims
- 1645US6674114B2Semiconductor device and manufacturing method thereofSANYO ELECTRIC CO·Filed 2002·Granted Jan 6, 2004·2 cites·5 claims
- 1741US2013187158A1Semiconductor deviceTANIGUCHI TOSHIMITSU·Filed 2013·Application pending·0 cites
- 1839US7224023B2Semiconductor device and method of manufacturing thereofSANYO ELECTRIC CO·Filed 2004·Granted May 29, 2007·0 cites·9 claims
- 1936US2003011072A1Semiconductor device and the manufacturing method thereofFiled 2002·Application pending·0 cites
- 2036US2003011073A1Semiconductor device and the manufacturing method thereofFiled 2002·Application pending·0 cites
- 2135US7045866B2Nonvolatile semiconductor memory deviceSANYO ELECTRIC CO·Filed 2004·Granted May 16, 2006·0 cites·8 claims
- 2232US7109538B2Nonvolatile semiconductor memory deviceSANYO ELECTRIC CO·Filed 2003·Granted Sep 19, 2006·0 cites·8 claims
- 2330US2004203214A1Method of manufacturing semiconductor deviceSANYO ELECTRIC CO·Filed 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →