Inventor · disambiguated record
Tomohide Terashima
Also filed as: TERASHIMA TOMOHIDE
87 granted patents·3 pending applications·1,029 citations·filing 1989–2023
99Inventor score
Top patents by PatentIndex Score
90 records- 0185US8395231B2Semiconductor device supplying charging current to element to be chargedTERASHIMA TOMOHIDE·Filed 2007·Granted Mar 12, 2013·10 cites·19 claims
- 0283US7723802B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2005·Granted May 25, 2010·11 cites·43 claims
- 0382US8710617B2Semiconductor device element formed on SOI substrate comprising a hollow region, and having capacitors in an electric field alleviation regionYAMASHITA JUNICHI·Filed 2013·Granted Apr 29, 2014·6 cites·12 claims
- 0481US11552073B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2021·Granted Jan 10, 2023·1 cites·5 claims
- 0581US5541430AVDMOS semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Jul 30, 1996·49 cites·17 claims
- 0680US5894156ASemiconductor device having a high breakdown voltage isolation regionMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Apr 13, 1999·46 cites·14 claims
- 0779US5204545AStructure for preventing field concentration in semiconductor device and method of forming the sameMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Apr 20, 1993·40 cites·7 claims
- 0878US6515349B2Semiconductor device and process for the sameMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Feb 4, 2003·24 cites·9 claims
- 0977US7755168B2Semiconductor device provided with floating electrodeMITSUBISHI ELECTRIC CORP·Filed 2007·Granted Jul 13, 2010·6 cites·15 claims
- 1077US6642599B1Semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Nov 4, 2003·53 cites·16 claims
- 1175US7825430B2Semiconductor device with a high breakdown voltage deviceMITSUBISHI ELECTRIC CORP·Filed 2007·Granted Nov 2, 2010·6 cites·12 claims
- 1275US7473965B2Structure of a high breakdown voltage element for use in high power applicationsMITSUBISHI ELECTRIC CORP·Filed 2007·Granted Jan 6, 2009·5 cites·6 claims
- 1374US6586780B1Semiconductor device for supplying output voltage according to high power supply voltageMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Jul 1, 2003·35 cites·13 claims
- 1474US5889310ASemiconductor device with high breakdown voltage island regionMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Mar 30, 1999·36 cites·3 claims
- 1573US7786532B2Structure of a high breakdown voltage element for use in high power applicationMITSUBISHI ELECTRIC CORP·Filed 2008·Granted Aug 31, 2010·4 cites·5 claims
- 1673US7709925B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2007·Granted May 4, 2010·5 cites·16 claims
- 1773US5485030ADielectric element isolated semiconductor device and a method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Jan 16, 1996·40 cites·27 claims
- 1873US5372954AMethod of fabricating an insulated gate bipolar transistorMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Dec 13, 1994·30 cites·20 claims
- 1972US7541248B2Integrated semiconductor device and method of manufacturing thereofRENESAS TECH CORP·Filed 2007·Granted Jun 2, 2009·3 cites·5 claims
- 2071US6359318B1Semiconductor device with DMOS and bi-polar transistorsMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Mar 19, 2002·40 cites·3 claims
- 2171US5731628ASemiconductor device having element with high breakdown voltageMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Mar 24, 1998·34 cites·12 claims
- 2270US6376891B1High voltage breakdown isolation semiconductor device and manufacturing process for making the deviceMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Apr 23, 2002·41 cites·8 claims
- 2369US5455439ASemiconductor device which moderates electric field concentration caused by a conductive film formed on a surface thereofMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Oct 3, 1995·31 cites·14 claims
- 2469US5164804ASemiconductor device having high breakdown voltage and low resistance and method of fabricating the sameMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Nov 17, 1992·29 cites·21 claims
- 2567US5428241AHigh breakdown voltage type semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Jun 27, 1995·27 cites·6 claims
- 2666US6894348B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2001·Granted May 17, 2005·13 cites·12 claims
- 2766US5334546AMethod of forming a semiconductor device which prevents field concentrationMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Aug 2, 1994·22 cites·3 claims
- 2865US5360746AMethod of fabricating a semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Nov 1, 1994·21 cites·3 claims
- 2964US8120107B2Semiconductor device internally having insulated gate bipolar transistorTERASHIMA TOMOHIDE·Filed 2011·Granted Feb 21, 2012·1 cites·2 claims
- 3064US5155569AThyristor device with improved turn-off characteristicsMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Oct 13, 1992·20 cites·8 claims
- 3163US5289019AInsulated gate bipolar transistorMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Feb 22, 1994·19 cites·2 claims
- 3262US8674471B2Semiconductor device supplying charging current to element to be chargedTERASHIMA TOMOHIDE·Filed 2012·Granted Mar 18, 2014·1 cites·20 claims
- 3362US7595536B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2006·Granted Sep 29, 2009·2 cites·16 claims
- 3462US6921945B2Semiconductor device with structure for improving breakdown voltageMITSUBISHI ELECTRIC CORP·Filed 2003·Granted Jul 26, 2005·7 cites·3 claims
- 3561US8093660B2Semiconductor deviceTERASHIMA TOMOHIDE·Filed 2008·Granted Jan 10, 2012·2 cites·17 claims
- 3660US5495124ASemiconductor device with increased breakdown voltageMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Feb 27, 1996·24 cites·6 claims
- 3758US5561077ADielectric element isolated semiconductor device and a method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Oct 1, 1996·20 cites·8 claims
- 3858US2024234348A9Semiconductor device, power conversion device, and method of manufacturing semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2023·Application pending·0 cites
- 3957US6472710B2Field MOS transistor and semiconductor integrated circuit including the sameMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Oct 29, 2002·7 cites·10 claims
- 4057US6191466B1Semiconductor device containing a diodeMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Feb 20, 2001·21 cites·9 claims
- 4157US5200638AA semiconductor device for extracting a signal used to monitor potential of a high voltage island at a low voltage island and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Apr 6, 1993·16 cites·14 claims
- 4257US2024203830A1Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2023·Application pending·0 cites
- 4356US7898029B2Semiconductor device internally having insulated gate bipolar transistorMITSUBISHI ELECTRIC CORP·Filed 2009·Granted Mar 1, 2011·0 cites·2 claims
- 4456US6642120B2Semiconductor circuitMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Nov 4, 2003·7 cites·19 claims
- 4556US6518158B1Method of manufacturing a semiconductor device including a fuseMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Feb 11, 2003·7 cites·3 claims
- 4654US7855427B2Semiconductor device with a plurality of isolated conductive filmsMITSUBISHI ELECTRIC CORP·Filed 2008·Granted Dec 21, 2010·0 cites·1 claims
- 4754US5091766AThyristor with first and second independent control electrodesMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Feb 25, 1992·16 cites·5 claims
- 4853US7186623B2Integrated semiconductor device and method of manufacturing thereofRENESAS TECH CORP·Filed 2003·Granted Mar 6, 2007·3 cites·5 claims
- 4953US7071516B2Semiconductor device and driving circuit for semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2004·Granted Jul 4, 2006·5 cites·10 claims
- 5053US6864550B2Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2003·Granted Mar 8, 2005·3 cites·6 claims
Showing the top 50 of 90 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →