Inventor · disambiguated record
Tomohito Tsushima
Also filed as: TSUSHIMA TOMOHITO
46 granted patents·1 pending application·344 citations·filing 2004–2019
98Inventor score
Top patents by PatentIndex Score
47 records- 0198US9070441B2Non-volatile memory system with reset verification mechanism and method of operation thereofSONY CORP·Filed 2012·Granted Jun 30, 2015·40 cites·20 claims
- 0293US7145791B2Memory device having variable resistive memory elementSONY CORP·Filed 2005·Granted Dec 5, 2006·32 cites·3 claims
- 0389US9349450B2Memory devices and memory operational methods including single erase operation of conductive bridge memory cellsMICRON TECHNOLOGY INC·Filed 2013·Granted May 24, 2016·8 cites·20 claims
- 0489US8416602B2Nonvolatile semiconductor memory deviceKITAGAWA MAKOTO·Filed 2011·Granted Apr 9, 2013·13 cites·20 claims
- 0587US8981325B2Memory device and storage apparatusARATANI KATSUHISA·Filed 2010·Granted Mar 17, 2015·6 cites·16 claims
- 0687US8884397B2Memory device and storage apparatusARATANI KATSUHISA·Filed 2010·Granted Nov 11, 2014·6 cites·7 claims
- 0785US9911489B2Memory cells, memory systems, and memory programming methodsMICRON TECHNOLOGY INC·Filed 2016·Granted Mar 6, 2018·5 cites·34 claims
- 0885US7560724B2Storage device with reversible resistance change elementsSONY CORP·Filed 2005·Granted Jul 14, 2009·18 cites·11 claims
- 0985US7242606B2Storage apparatus and semiconductor apparatusSONY CORP·Filed 2005·Granted Jul 10, 2007·19 cites·12 claims
- 1085US7092278B2Memory deviceSONY CORP·Filed 2005·Granted Aug 15, 2006·18 cites·8 claims
- 1181US7433220B2Two variable resistance elements being formed into a laminated layer with a common electrode and method of driving the sameSONY CORP·Filed 2005·Granted Oct 7, 2008·13 cites·13 claims
- 1280US10395731B2Memory cells, memory systems, and memory programming methodsMICRON TECHNOLOGY INC·Filed 2017·Granted Aug 27, 2019·3 cites·37 claims
- 1380US8570787B2Storage apparatus and operation method for operating the sameKITAGAWA MAKOTO·Filed 2012·Granted Oct 29, 2013·6 cites·16 claims
- 1480US7719082B2Memory device and storage apparatusSONY CORP·Filed 2004·Granted May 18, 2010·22 cites·6 claims
- 1579US9293196B2Memory cells, memory systems, and memory programming methodsMICRON TECHNOLOGY INC·Filed 2013·Granted Mar 22, 2016·5 cites·38 claims
- 1677US8569732B2Memory element and memory deviceYASUDA SHUICHIRO·Filed 2011·Granted Oct 29, 2013·5 cites·16 claims
- 1776US7715220B2Memory apparatusSONY CORP·Filed 2007·Granted May 11, 2010·10 cites·5 claims
- 1876US7184295B2Memory deviceSONY CORP·Filed 2005·Granted Feb 27, 2007·10 cites·7 claims
- 1975US8576608B2Memory apparatusTSUSHIMA TOMOHITO·Filed 2011·Granted Nov 5, 2013·5 cites·8 claims
- 2075US7239542B2Storage apparatusSONY CORP·Filed 2005·Granted Jul 3, 2007·11 cites·4 claims
- 2174US8446756B2Method of stabilizing data hold operations of a storage deviceSHIIMOTO TSUNENORI·Filed 2008·Granted May 21, 2013·5 cites·14 claims
- 2273US9007837B2Non-volatile memory system with reset control mechanism and method of operation thereofSONY CORP·Filed 2013·Granted Apr 14, 2015·4 cites·10 claims
- 2373US7786459B2Memory element and memory device comprising memory layer positioned between first and second electrodesSONY CORP·Filed 2005·Granted Aug 31, 2010·7 cites·6 claims
- 2472US10438661B2Memory devices and methods of writing memory cells at different moments in timeMICRON TECHNOLOGY INC·Filed 2016·Granted Oct 8, 2019·2 cites·14 claims
- 2572US7126152B2Storage deviceSONY CORP·Filed 2004·Granted Oct 24, 2006·18 cites·17 claims
- 2671US7016234B2Storage deviceSONY CORP·Filed 2004·Granted Mar 21, 2006·12 cites·14 claims
- 2770US8102716B2Nonvolatile semiconductor memory device and method for performing verify write operation on the sameSHIIMOTO TSUNENORI·Filed 2010·Granted Jan 24, 2012·5 cites·10 claims
- 2869US10783961B2Memory cells, memory systems, and memory programming methodsMICRON TECHNOLOGY INC·Filed 2019·Granted Sep 22, 2020·1 cites·14 claims
- 2969US9646690B2Non-volatile memory system with reset verification mechanism and method of operation thereofSONY CORP·Filed 2015·Granted May 9, 2017·2 cites·8 claims
- 3069US7372718B2Storage and semiconductor deviceSONY CORP·Filed 2005·Granted May 13, 2008·8 cites·7 claims
- 3168US10622067B2Memory systems and memory writing methodsMICRON TECHNOLOGY INC·Filed 2018·Granted Apr 14, 2020·1 cites·15 claims
- 3267US10658588B2Memory cell switch deviceYASUDA SHUICHIRO·Filed 2017·Granted May 19, 2020·2 cites·12 claims
- 3366US9530469B2Integrated circuit system with non-volatile memory stress suppression and method of manufacture thereofSONY CORP·Filed 2013·Granted Dec 27, 2016·3 cites·8 claims
- 3464US11295812B2Memory devices and memory operational methodsMICRON TECHNOLOGY INC·Filed 2019·Granted Apr 5, 2022·0 cites·26 claims
- 3563US7772029B2Memory element and memory device comprising memory layer positioned between first and second electrodesSONY CORP·Filed 2007·Granted Aug 10, 2010·4 cites·4 claims
- 3661US8369128B2Storage device and information rerecording methodSONY CORP·Filed 2008·Granted Feb 5, 2013·4 cites·16 claims
- 3761US7583525B2Method of driving storage deviceSONY CORP·Filed 2007·Granted Sep 1, 2009·4 cites·9 claims
- 3856US8842463B2Storage apparatus and operation method for operating the sameSONY CORP·Filed 2013·Granted Sep 23, 2014·1 cites·20 claims
- 3955US9153317B2Non-volatile memory system with power reduction mechanism and method of operation thereofSONY CORP·Filed 2012·Granted Oct 6, 2015·1 cites·16 claims
- 4054US8213214B2Storage device and information rerecording methodTSUSHIMA TOMOHITO·Filed 2008·Granted Jul 3, 2012·3 cites·18 claims
- 4152US8363447B2Storage device and information recording and verification methodSONY CORP·Filed 2008·Granted Jan 29, 2013·2 cites·18 claims
- 4247US9905300B2Memory device with variable trim parametersSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2017·Granted Feb 27, 2018·0 cites·20 claims
- 4347US9594516B2Memory device with variable trim parametersSONY CORP·Filed 2014·Granted Mar 14, 2017·0 cites·8 claims
- 4443US8350248B2Memory element and memory deviceSONY CORP·Filed 2009·Granted Jan 8, 2013·0 cites·15 claims
- 4542US2020066794A1Memory cell switch deviceSONY CORP·Filed 2018·Application pending·0 cites
- 4641US9093147B2Method and apparatus for common source line charge transferSONY CORP·Filed 2013·Granted Jul 28, 2015·0 cites·14 claims
- 4739US10249366B2Integrated circuit system with non-volatile memory stress suppression and method of manufacture thereofSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2016·Granted Apr 2, 2019·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →